Abstract: In order to fabricate high quality ferroelectric thin films qualified for Ferroelectric Field Effect Transistors (FFETs) and
Ferroelectric Memory Diodes (FMDs), different ferroelectric thin film systems, with the structure of MF (I) S, were deposited by using
the pulsed laser deposition technique. The C-V characteristics of them were analyzed with comparison. The results showed that the primary factors
having effect on C-V characteristics included configuration designs of the thin films in addition to the substrate type and the interface
properties of the systems. Based on the above results, practicable thoughts to improve the C-V characteristics of ferroelectric thin
films were presented.

Key words: ferroelectric thin film, C-V characteristic, PLD method