ReX2 (X=S, Se): A New Opportunity for Development of Two-dimensional Anisotropic Materials

doi:10.15541/jim20180171

Abstract

Abstract:

Two dimensional (2D) materials have attracted wide attention due to their ultrathin atomic structure, large specific surface area and quantum confinement effect which are remarkably different from their bulk counterparts. Anisotropic materials are unique among reported 2D materials. Their orientation-dependent physical and chemical properties make it possible to selectively improve the performance of materials. As representative examples, Re-based transition metal dichalcogenides (Re-TMDs) have tunable bandgaps in visible spectrum, extremely weak interlayer coupling, and anisotropic properties in optics and electronics, which make them attractive in the application areas of electronics and optoelectronics. In this riviev, the unique crystal structures and intrinsic properties of the Re-based TMDs semiconductors are introduced firstly, and then the synthetic method is introduced, followed by discussion on the unique physical characterizations and optimized means. Finally, prospects and suggestions are put forward for the preparation and research of ReX₂.

Key words: anisotropy, ReS₂, ReSe₂, review

CLC Number:

TQ174

WANG Ren-Yan, GAN Lin, ZHAI Tian-You. ReX₂ (X=S, Se): A New Opportunity for Development of Two-dimensional Anisotropic Materials[J]. Journal of Inorganic Materials, 2019, 34(1): 1-16.

Figures/Tables 11

Fig. 1 (a) The model unitcell view of ReS2[33]; (b) Top view of the crystalline structure of distorted-1T phase of monolayer ReX2(Black balls represent Re atoms and yellow balls represent S or Se atoms); (c, d) Schematic images of 1T lattice symmetries and energy levels of d-orbital electrons induced by the crystal field[39,40]; (e) First-principles scalar relativistic projector augmented wave calculations of electronic band structures for bulk (top) and single-layer (down) ReSe2[50]; (f) Band structure of monolayer, trilayer and five-layer ReS2 by ab initio-calculations[51]

Table 1 Original unit-cell lattice parameters of ReS2 and ReSe2[36,37]

Materials	a/nm	b/nm	c/nm	α/(°)	β/(°)	γ/(°)	V/nm³
ReS₂	0.6417	0.6510	0.6461	121.10	88.38	106.47	0.21930
ReSe₂	0.6603	0.6717	0.6718	91.87	104.93	118.95	0.24753

Fig. 2 PL spectra of ReS2 flakes with different number of layers; (b) Integrated PL intensity as a function of number of layers (normalized to that of monolayer) in ReS2, MoS2, MoSe2, WS2 and WSe2[50]; Raman spectra recorded on (c) N-layer ReS2 and (d) N-layer ReSe2 in the parallel polarization configuration[58]; (e) Schematic for the process of oriented self assembly of ReS2 nanoscrolls[59]; (f) Schematic for the TIB of a single ReS2 nanowall[60]

Fig. 3 (a) SEM image of ReS2 powders and TEM image of as-exfoliated ReS2 nanosheets with inset showing photograph of a typical dark-brown exfoliated ReS2 suspension in water; (b) High-resolution STEM image of as-exfoliated ReS2 nanosheets[70]; (c) Schematics for different density gradient ultracentrifugation ReS2 nanosheets through iDGU; (d) Atomic force microscopy image of solution-processed ReS2 following deposition on a Si wafer; (e) Raman spectrum of ReS2 nanosheets[63]

Fig. 4 (a) Schematic diagram of synthesized ReS2 film by PVD; (b) Raman spectrum of ReS2 film ; (c) Optical photograph of grown ReS2 film on the SiO2/Si substrate with inset showing the AFM and TEM images[88]; (d) A picture of bare and as-grown ReS2 bilayer film on sapphire wafer by CVD; (e) Optical microscope image of the ReS2 hexagons[74]

Fig. 5 (a) Schematic for the tellurium-assisted CVD growth approach; (b) Optical image of ReS2 after transferred onto SiO2/Si (300 nm) substrate with inset showing AFM image of ReS2 on mica substrate[77]; (c) Schematic of the CVD growth of ReSe2 in the confined reaction space and the surface reaction during the epitaxial growth of the ReSe2 atomic layer on mica; (d) Optical image of ReSe2 in A and B face[89]

Fig. 6 (a) A schematic illustrating the pump-probe experiment of few-layer ReS2 with inset showing optical image of few-layer ReS2; (b) Polarization-dependent absorption spectra of few-layer ReS2; (c) Corresponding spectral weights of Lorentzian contributions of X1 (blue dots) and X2(red dots). Yellow line represents the b-axis[122]; (d) Raman spectrum for bulk ReS2[128] and Low-frequency Raman spectroscopy of few layer ReS2[131]; (e) Unpolarized Raman spectra as a function of sample orientation angle; (f) High-magnification ADF-STEM image and corresponded polarization-and orientation-resolved Raman spectra[130]

Table 2 The 18 Raman active frequencies in bulk and monolayer ReS2 under 633 nm solid state laser excitation[35]

Symmetry	Bulk/cm^-1	Monolayer/cm^-1	Origin of phonon mode
Ag	140.3	139.2	Out-of-plane vibrations of Re atoms
Ag	145.9	145.3	Out-of-plane vibrations of Re atoms
Eg	153.1	153.6	In-plane vibrations of Re atoms
Eg	163.6	163.6	In-plane vibrations of Re atoms
Eg	217.2	217.7	In-plane vibrations of Re atoms
Eg	237.1	237.7	In-plane vibrations of Re atoms
Cp	278.3	278.3	In- and out-of-plane vibration of Re and S atoms
Cp	284.2	284.7	In- and out-of-plane vibration of Re and S atoms
Eg	307.8	307.8	In-plane vibrations of S atoms
Eg	311.0	311.0	In-plane vibrations of S atoms
Cp	320.6	320.6	In- and out-of-plane vibration of S atoms
Cp	324.9	324.9	In- and out-of-plane vibration of S atoms
Cp	348.8	348.8	In- and out-of-plane vibration of S atoms
Cp	368.9	369.5	In- and out-of-plane vibration of S atoms
Cp	377.9	377.4	In- and out-of-plane vibration of S atoms
Cp	407.3	408.3	In- and out-of-plane vibration of S atoms
Ag	418.7	419.3	Out-of-plane vibrations of S atoms
Ag	438.0	437.5	Out-of-plane vibrations of S atoms

Fig. 7 (a) Optical microscope image of ReS2 four probe transistor; (b) The magnified ADF images taken from the sample in (a); (c) The direction-dependent I-V characteristics with inset showing nonlinear I-V behavior indicate the Schottky Au/ReS2 contacts; (d) The direction-dependent transfer characteristics[137]; (e) Transfer curves of anisotropic ReS2 FETs along two sides with top inset showing optical image of the devices (Scale bar, 10 μm) and low inset showing the 4-probe resistance of the same devices. (f) Normalized field-effect mobility of a six-layer device with inset showing the optical image of the device[51]; (g) Angle-dependent transfer curves of ReS1.23Se0.77 alloy device with inset showing optical image of ReS2 device[76]

Fig. 8 (a) The photocurrent of ReS2 change as a function of drain bias under different polarization light illuminations; (b) The change of the photocurrent under different drain biases plotted as a function of polarization angle[112]; (c) Photocurrent response of ReS1.06Se0.94 alloy device under light on and off irradiation, and under light with different polarization direction; (d) Polar plots for the photocurrent with respect to the polarization angle of the incident light[76]; (e) Schematic structure of ReSe2 photodetectors; (f) The SEM image and polarization-dependent photocurrent mapping of the device[15]

Fig. 9 (a) Optical microscopy image of an exfoliated ReS2 ?ake; (b) Through-plane TDTR data at two modulation frequencies; (c) In-plane TDTR data at f = 1.1 MHz and time delay of -50 ps. The dashed lines are the intensity profile of the laser beam; (d) 2D beam-offset scan of the TDTR signal; (e) In-plane thermal conductivity of exfoliated ReS2 ?akes as a function of thickness[151]

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ReX₂ (X=S, Se): A New Opportunity for Development of Two-dimensional Anisotropic Materials

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