Ba(Mg1/3Ta2/3(1+x))O3陶瓷烧结性、微观结构及微波介电性能

Abstract

Abstract: Sintering behavior, microstructure and microwave dielectric properties of the nonstoichiometric Ba(Mg_1/3Ta_2/3(1+x)O₃ with --0.01≤ x≤0.01 were
investigated. The sintered density was improved by increasing Ta concentration. The ordering parameter S was not only related to the presence of defect in the specimen
but also sensitive to the type of defects. The presence of B-site vacancy might hinder the ordering procedure much more significantly than that of A-site vacancy. The
Q· f value decreased and the dielectric constant increased with the increase of tantalum contents.

Key words: B-site nonstoichiometry, sintering, microstructure, microwave dielectric properties

CLC Number:

TN015

BIAN Jian-Jiang,ZHAO Mei--Yu,YAO Yao,YIN Zhi-Wen. Ba(Mg_1/3Ta_2/3(1+x))O₃陶瓷烧结性、微观结构及微波介电性能
[J]. Journal of Inorganic Materials.

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Ba(Mg_1/3Ta_2/3(1+x))O₃陶瓷烧结性、微观结构及微波介电性能

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