Effect of Sputtering Parameters on Phase Transformation of PZT Thin Films

Abstract

Abstract: PZT thin films were fabricated on (111)Pt/Ti/SiO₂/Si by RF magnetron sputtering with a ceramic target(PZT53/47). The as-deposited
thin films were annealed with a rapid thermal annealing process. XRD was used to determine the structure of the thin films. This paper focused on the
research about the influence of sputtering gas and substrate temperature on the structure of the thin films. It was found that the process of phase
transformation of PZT thin films changed with the ratio of Ar to O₂ and substrate temperatures. The ferroelectric property of PZT thin films
was measured by RT66A standardized ferroelectric test system. When 5V voltage was applied, the film showed a remnant polarization of 14.6μC/cm², and coercive
field of 82.9kV/cm.

Key words: RF magnetron sputtering, ferroelectric thin film, pyroclore, perovskite

CLC Number:

O484

ZENG Sheng,DING Al-Li,QIU Ping-Sun,HE Xi-Yun,LUO Wei-Gen. Effect of Sputtering Parameters on Phase Transformation of PZT Thin Films[J]. Journal of Inorganic Materials.

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Effect of Sputtering Parameters on Phase Transformation of PZT Thin Films

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