Effects of the Porosity of the Source Materials on the Initial Growth of 6H-SiC Crystal

doi:10.3724/SP.J.1077.2010.00177

Abstract

Abstract:

The source materials with different porosity were be prepared by different loading ways. Effects of the porosity (porosity: 50%,55%,60%) of the source materials on the crystal growth rate and the crystal quality in the initial stage of SiC crystal growth were investigated respectively. It is found that crystal growth rate rises and the crystal quality declines with the increase of the porosity of the source materials. The temperature distribution and mass transport in the source materials (porosity: 50%, 55%, 60%) as well as the growth rate in the initial growth stage are simulated by the finite element method. The heat transfer inside the source material under the typical growth temperature bases on thermal radiation between SiC granulas. The simulations indicate that it takes the least time to reach stationary heat transfer for the source materials with 60% porosity and its growth rate in the initial growth stage is the largest among them. Therefore, the simulations explain the results of the growth experiments very well.

Key words: silicon carbide, growth rate, finite element method

CLC Number:

TB321

LIU Xi,CHEN Bo-Yuan,CHEN Zhi-Zhan,SONG Li-Xin,SHI Er-Wei. Effects of the Porosity of the Source Materials on the Initial Growth of 6H-SiC Crystal
[J]. Journal of Inorganic Materials, DOI: 10.3724/SP.J.1077.2010.00177.

References

［1］Selder M, Kadinski L, Makarov Yu, et al. Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT. J. Cryst. Growth, 2000, 211(1-4): 333-338.

［2］Klein O, Philip P, Sprekels J, et al. Radiation- and convection-driven transient heat transfer during sublimation growth of silicon carbide single crystals. J. Cryst. Growth, 2001, 222(4): 832-851.

［3］Chen Q S, Zhang H, Prasad V. Heat transfer and kinetics of bulk growth of silicon carbide.J. Cryst. Growth, 2001, 230(1/2): 239-246.

［4］Nishizawa S, Michikawa Y, Kato T, et al. Stress analysis of SiC bulk single crystal growth by sublimation method. Mater. Sci. Forum, 2003, 433-436: 13-16.

［5］Liu X, Shi E W, Song L X, et al. Effects of graphitization of the crucible on silicon carbide crystal growth.J. Cryst. Growth, 2008, 310(19): 4314-4318.

［6］Heydemann V D, Rohrer G S, Sanchez E K, et al. The structural evolution of seed surfaces during the initial stages of physical vapor transport SiC growth. Mater. Sci. Forum, 1998, 264-268: 37-40.

［7］Mantzari A, Polychroniadis E K, Wollweberb J, et al. Defect status near the SiC/substrate interface: investigation of the first stage of the growth by physical vapour transport. J. Cryst. Growth, 2005, 275(1/2): e1813-e1819.

［8］Kitanin E L, Ramm M S, Ris V V, et al. Heat transfer through source powder in sublimation growth of SiC crystal. Mat. Sci. Eng. B,1998, 55(3): 174-183.

［9］Kulik A V, Bogdanov M V, Karpov S Y, et al. Theoretical analysis of the mass transport in the powder charge in long-term bulk SiC growth. Mater. Sci. Forum, 2004, 457-460: 67-70.

［10］Wellmann P J, Herro Z, Winnacket A, et al. In situ visualization of SiC physical vapor transport crystal growth. J. Cryst. Growth, 2005, 275(1/2): e1807-e1812.

［11］Wellmann P J, Herro Z, Sakwe S A, et al. Analysis of graphitization during physical vapor transport growth of silicon carbide. Mater. Sci. Forum, 2004, 457-460: 55-58.

［12］Wellmann P J, Bickermann M, Hofmann D, et al. On the origin of the below band-gap absorption bands in n-Type (N) 4H- and 6H-SiC. Mater. Sci. Forum, 2000, 338-342: 71-74.

[1]	WANG Hao, LIU Xuechao, ZHENG Zhong, PAN Xiuhong, XU Jintao, ZHU Xinfeng, CHEN Kun, DENG Weijie, TANG Meibo, GUO Hui, GAO Pan. Performance of Lateral 4H-SiC Photoconductive Semiconductor Switches by Extrinsic Backside Trigger [J]. Journal of Inorganic Materials, 2024, 39(9): 1070-1076.
[2]	SUN Chuan, HE Pengfei, HU Zhenfeng, WANG Rong, XING Yue, ZHANG Zhibin, LI Jinglong, WAN Chunlei, LIANG Xiubing. SiC-based Ceramic Materials Incorporating GNPs Array: Preparation and Mechanical Characterization [J]. Journal of Inorganic Materials, 2024, 39(3): 267-273.
[3]	XU Hao, QIAN Wei, HUA Yinqun, YE Yunxia, DAI Fengze, CAI Jie. Effects of Micro Texture Processed by Picosecond Laser on Hydrophobicity of Silicon Carbide [J]. Journal of Inorganic Materials, 2023, 38(8): 923-930.
[4]	CHEN Qiang, BAI Shuxin, YE Yicong. Highly Thermal Conductive Silicon Carbide Ceramics Matrix Composites for Thermal Management: a Review [J]. Journal of Inorganic Materials, 2023, 38(6): 634-646.
[5]	LI Yicun, LIU Xuedong, HAO Xiaobin, DAI Bing, LYU Jilei, ZHU Jiaqi. Rapid Growth of Single Crystal Diamond at High Energy Density by Plasma Focusing [J]. Journal of Inorganic Materials, 2023, 38(3): 303-309.
[6]	GU Xuesu, YIN Jie, WANG Kanglong, CUI Chong, MEI Hui, CHEN Zhongming, LIU Xuejian, HUANG Zhengren. Effect of Particle Grading on Properties of Silicon Carbide Ceramics by Binder Jetting Printing [J]. Journal of Inorganic Materials, 2023, 38(12): 1373-1378.
[7]	OUYANG Qin, WANG Yanfei, XU Jian, LI Yinsheng, PEI Xueliang, MO Gaoming, LI Mian, LI Peng, ZHOU Xiaobing, GE Fangfang, ZHANG Chonghong, HE Liu, YANG Lei, HUANG Zhengren, CHAI Zhifang, ZHAN Wenlong, HUANG Qing. Research Progress of SiC Fiber Reinforced SiC Composites for Nuclear Application [J]. Journal of Inorganic Materials, 2022, 37(8): 821-840.
[8]	RUAN Jing, YANG Jinshan, YAN Jingyi, YOU Xiao, WANG Mengmeng, HU Jianbao, ZHANG Xiangyu, DING Yusheng, DONG Shaoming. Porous SiC Ceramic Matrix Composite Reinforced by SiC Nanowires with High Strength and Low Thermal Conductivity [J]. Journal of Inorganic Materials, 2022, 37(4): 459-466.
[9]	LUO Qing,YUAN Qing,JIANG Qian-Qin,YU Nai-Sen. Cu-SSZ-13/SiC-waste Composite: Synthesis and Application for NH₃-SCR [J]. Journal of Inorganic Materials, 2019, 34(9): 953-960.
[10]	HE Fei, LI Ya, LUO Jin, FANG Min-Han, HE Xiao-Dong. Development of SiO₂/C and SiC/C Composites Featuring Aerogel Structures [J]. Journal of Inorganic Materials, 2017, 32(5): 449-458.
[11]	YU Jie-Yi, HUANG Hao, GAO Jian, ZHOU Lei, GAO Song, DONG Xing-Long, QUAN Xie. Synthesis and Catalytic Performances of SiC Nanoparticles by DC Arc-discharge Plasma [J]. Journal of Inorganic Materials, 2017, 32(4): 351-356.
[12]	ZHAO Wei-Wei, CHEN Xiao-Xin, LIN Chu-Cheng, SONG Xue-Mei, ZENG Yi, CHANG Cheng-Kang. Quantitative Calculation of Thermal Conductivity of Tetragonal Phase and Grain Boundary on Zirconia Ceramics [J]. Journal of Inorganic Materials, 2017, 32(11): 1177-1180.
[13]	ZHUO Shi-Yi, LIU Xi, GAO Pan, YAN Cheng-Feng, SHI Er-Wei. Luminescence of Donor-acceptor-pair in Fluorescent 4H-SiC Doped with Nitrogen, Boron and Aluminum [J]. Journal of Inorganic Materials, 2017, 32(1): 51-55.
[14]	WANG Feng, GAO Zhao-Fen, XU Jia-Qiang, ZENG Yu-Ping. Porous SiC Ceramics with Multiple Pore Structure Fabricated via Gelcasting and Solid State Sintering [J]. Journal of Inorganic Materials, 2016, 31(3): 305-310.
[15]	ZOU Ai-Hua, ZHOU Xian-Liang, HUA Xiao-Zhen, WU Kai-Yang. Effect of Continuous-distribution Inter-phase on the Thermal Conductivity of SiC_p/Al Composites by Numerical Simulation Method [J]. Journal of Inorganic Materials, 2015, 30(12): 1283-1290.