Developments of Point Defects in ZnGeP2 Crystals

doi:10.3724/SP.J.1077.2008.01089

Abstract

Abstract: ZnGeP₂ is a nonlinear optical material which is useful for important applications in the infrared region. A serious limitation to the development of ZnGeP₂-based applications is the presence of point defects in the crystals. The latest development of the point defects in ZnGeP₂ is summarized in the paper. Firstly, the point defects are studied by electron paramagnetic resonance technique. The dominant point defects in ZnGeP₂ are V^-_Znacceptor, V⁰_P and Ge⁺_Zn donors, and their energy levels are E(V^-_Zn)=E_C-(1.02±0.03)eV, E(V⁰_P)=E_V+(1.61±0.06)eV and
E(Ge⁺_Zn)=E_V+(1.70±0.03)eV. In addition, the two defects V^-3_Ge and VPi are observed in electron irradiated and annealed ZnGeP₂, respectively. Secondly, the point defects are studied simulatively by full-potential linearized muffin-tin orbital method. The results of the dominant defects and their energy levels are in agreement with the experimental evidences. However, there still exists difference between the theoretical simulation and the actual situation, some results are discrepant with the experimental conclusions. Therefore, it is important to investigate point defects by the combination of experiment and theory.

Key words: ZnGeP₂ crystals, electron paramagnetic resonance, acceptors, donors, density

CLC Number:

ZHU Chong-Qiang,YANG Chun-Hui,WANG Meng,XIA Shi-Xing,MA Tian-Hui,LU Wei-Qiang. Developments of Point Defects in ZnGeP₂ Crystals[J]. Journal of Inorganic Materials, DOI: 10.3724/SP.J.1077.2008.01089.

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Developments of Point Defects in ZnGeP₂ Crystals

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