α-axis Oriented Bi4Ti3O12 Thin Films Deposited on Si(111) by Femtosecond Laser Ablation and Its Characteristic of I-V Curve

doi:10.3724/SP.J.1077.2006.01230

Abstract

Abstract:

The polycrystalline Bi₄Ti₃O₁₂ thin films were successfully prepared by femtosecond laser deposition on Si(111) wafers. X-ray diffraction (XRD) showed that Bi₄Ti₃O₁₂ thin film was highly c-axis-oriented deposited at room temperature (20℃), but the film was highly a-axis-oriented deposited at 500circC. The remanent polarization (P _r) and coercive force (E_c) of a-axis-oriented samples were measured to be 15μC/cm² and 48kV/cm respectiovely. An equivalent circuit with distributed constants of Bi₄Ti₃O₁₂/Si was introduced to interpret the relationship between the I-V characteristic curve and the ferroelectric hysteresis loop of Bi₄Ti₃O₁₂ deposited on Si.

Key words: femtosecond, pulsed laser deposition, Bi4Ti3O12, ferroelectric

CLC Number:

O484

ZHOU You-Hua,ZHENG Qi-Guang,YANG Guang,LONG Hua,LU Pei-Xiang. α-axis Oriented Bi₄Ti₃O₁₂ Thin Films Deposited on Si(111) by Femtosecond Laser Ablation and Its Characteristic of I-V Curve[J]. Journal of Inorganic Materials, DOI: 10.3724/SP.J.1077.2006.01230.

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α-axis Oriented Bi₄Ti₃O₁₂ Thin Films Deposited on Si(111) by Femtosecond Laser Ablation and Its Characteristic of I-V Curve

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