Structure and Electrical Properties of High-Temperature Bismuth Layered Piezoelectric Bi4Ti3O12 Ceramics

doi:10.15541/jim20240480

Abstract

Abstract: In recent years, driven by the rapid development of technologies such as aerospace and nuclear power generation, there is an urgent need for piezoelectric ceramic material capable of operating at temperatures of 450 ℃ and above, served as a piezoelectric sensing element in high-temperature piezoelectric vibration sensors. Bi₄Ti₃O₁₂, abbreviated as BIT, is a piezoelectric ceramic with a high Curie temperature (T_C~650 ℃) within the family of bismuth-layered ferroelectric ceramics, making it a promising candidate for high-temperature applications.However, the inherent low piezoelectric coefficient and low high-temperature resistivity of pure phase BIT ceramics limit their application in such environments. This work used solid-phase reaction method to prepare Bi₄Ti₃O₁₂-based piezoelectric ceramics with substitutions at A-site by Ce ions and at the B-site by W/Ta/Sb ions(abbreviated as BCTWTaS-100x, where x=0-0.04). The effect of Ce doping on the structure and electrical properties of Bi₄Ti₃O₁₂ based ceramics was systematically studied.The introduction of Ce ions induces lattice distortion and modifies domain structure of BIT-based ceramics, thereby enhancing their piezoelectric properties (with a piezoelectric constant d₃₃= 37 pC/N at x = 0.03). With the doping concentration of ions increasing, the relative displacement of oxygen atoms at the apex of TiO₆ octahedra increases, resulting in increased lattice distortion within BIT-based ceramic. Furthermore, BCTWTaS-0.03 ceramics demonstrate a high Curie temperature (T_C = 673 ℃) and high-temperature resistivity, maintaining resistivity on the order of 10⁶ Ω·cm at 500 ℃. In addition, these ceramics also exhibit good piezoelectric coefficient thermal stability of the piezoelectric coefficient and excellent piezoelectric sensitivity. Notably, after depolarization at 600 ℃ for 2 h, d₃₃ can still maintain over 85% of its initial value. These finds indicate that BCTWTaS-100x ceramics have great potential for application in high-temperature environments exceeding 450 ℃.

Key words: Bi₄Ti₃O₁₂, high Curie temperature, piezoelectric ceramics, lattice distortion

ZHANG Jiawei, CHEN Ning, CHENG Yuan, WANG Bo, ZHU Jianguo, JIN Cheng. Structure and Electrical Properties of High-Temperature Bismuth Layered Piezoelectric Bi₄Ti₃O₁₂Ceramics[J]. Journal of Inorganic Materials, DOI: 10.15541/jim20240480.

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Structure and Electrical Properties of High-Temperature Bismuth Layered Piezoelectric Bi₄Ti₃O₁₂Ceramics

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