Journal of Inorganic Materials ›› 2024, Vol. 39 ›› Issue (8): 887-894.DOI: 10.15541/jim20240065

Special Issue: 【信息功能】介电、铁电、压电材料(202409)

• RESEARCH ARTICLE • Previous Articles     Next Articles

Effects of W/Cr Co-doping on the Crystal Structure and Electric Properties of CaBi2Nb2O9 Piezoceramics

HUANG Jianfeng1,2(), LIANG Ruihong1, ZHOU Zhiyong1()   

  1. 1. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
    2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2024-02-05 Revised:2024-02-28 Published:2024-08-20 Online:2024-03-30
  • Contact: ZHOU Zhiyong, professor. E-mail: zyzhou@mail.sic.ac.cn
  • About author:HUANG Jianfeng (1999-), male, Master candidate. E-mail: huangjianfeng21@mails.ucas.ac.cn
  • Supported by:
    National Natural Science Foundation of China(51932010)

Abstract:

Calcium bismuth niobate (CaBi2Nb2O9) is a typical bismuth layered structure piezoelectric material with high Curie temperature (about 943 ℃) and high stability, which is an important candidate functional element for high temperature vibration sensors above 600 ℃. However, its low piezoelectric coefficient and high temperature resistivity seriously limit the signal acquisition of high-temperature piezoelectric vibration sensor. To improve the comprehensive performance, in this work, W/Cr co-doped CaBi2Nb1.975W0.025O9-x%Cr2O3 (CBNW-xCr, 0<x≤0.2) Aurivillius phase ceramics were prepared via conventional solid-state sintering route. The effects of W/Cr co-doping on the crystal structure and electrical properties of CBN piezoelectric ceramics were investigated. The results show that co-doping of W/Cr elements transforms crystal structure of the ceramics from orthorhombic to tetragonal crystal system, enhances distortion of the crystal structure, and significantly improves piezoelectric and insulating properties of the piezoelectric ceramics. When x=0.1, the Curie temperature is 931 ℃, the piezoelectric coefficient is 15.6 pC/N, the resistivity reaches the order of 106 Ω∙cm at 600 ℃, and the dielectric loss is only 0.029, which endows the system an important potential application in the field of high-temperature piezoelectricity.

Key words: high-temperature piezoelectric ceramic, crystal structure, piezoelectric property, pseudo-tetragonal distortion

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