Effect of Film Formation Processes of NiOx Mesoporous Layer on Performance of Perovskite Solar Cells with Carbon Electrodes

doi:10.15541/jim20230002

Abstract

Abstract:

Carbon-based perovskite solar cells (C-PSCs) play an important role in industrialization research due to their stability and low cost. In this work, high-quality NiO_x mesoporous layer was selected as a hole transport layer (HTL) based on MAPbI₃ material to enhance the performance of C-PSCs. The effect of preparation methods of the NiO_x mesoporous layer on the solar cell performance and the optimum thickness of the NiO_x mesoporous layer were investigated. It was found that mesoporous layers prepared by screen-printing process with well-distributed pores facilitated the filling of perovskite (PVK) precursor solution in the underlayer mesoporous scaffold. Finally, an HTL-contained perovskite solar cell with high efficiency and almost negligible hysteresis was achieved, possessing an open-circuit voltage (V_OC) of 910 mV, a power conversion efficiency (PCE) of 14.63%, and certified efficiency reached 14.88%. Moreover, PCE of the solar cell displayed outstanding stability after being stored in air for nearly 900 h.

Key words: carbon-based perovskite solar cell, NiO_x hole transport layer, pore distribution, stability

CLC Number:

TQ174

FANG Wanli, SHEN Lili, LI Haiyan, CHEN Xinyu, CHEN Zongqi, SHOU Chunhui, ZHAO Bin, YANG Songwang. Effect of Film Formation Processes of NiO_x Mesoporous Layer on Performance of Perovskite Solar Cells with Carbon Electrodes[J]. Journal of Inorganic Materials, 2023, 38(9): 1103-1109.

Figures/Tables 14

Fig. 1 (a) Schematic illustration and (b) work function of the device, cross-sectional SEM images of C-PSCs: (c) device A, (d) device B and (e) device C, and (f) element distribution in the direction of the white arrow in (e)

Fig. 2 Photographs of NiOx dispersions for (left) spin-coating (SC), for (right) screen-printing (SP) (a) before and (b) after standing for 30 min

Fig. 3 SEM images of (a) ZrO2 mesoporous film, (b) spin- coated and (c) screen-printed NiOx films, and (d) PL spectra for sample A (ZrO2/MAPbI3), sample B (ZrO2/NiOx (spin-coated)/ MAPbI3), and sample C (ZrO2/NiOx(screen-printed)/MAPbI3)

Fig. 4 (a) XRD patterns of MAPbI3 in different devices and (b) local magnified XRD patterns in range of 13.6°-14.6°

Fig. 5 (a-c) J-V curves and (d) incident photon-to-electron conversion efficiency (IPCE) spectra and the integrated current density curves of different devices (a) Forward and reverse scans of device A, B and C; (b) Different thicknesses of NiOx layer; (c) The optimum cells of device A and device C; Colorful figures are available on website

Fig. 6 (a) J-V curves under dark conditions, (b) light-intensity dependence of VOC (solid line: linear fitting), (c) transient photovoltage (TPV) decay curves, (d) transient photocurrent (TPC) decay curves, (e) Nyquist plots measured in the dark, and (f) Mott-Schottky plots for device A and device C; Colorful figures are available on website

Fig. 7 Long-term storage stability of PSCs in air with relative humidity of 30%-40% (a) JSC; (b) VOC; (c) FF; (d) PCE

Fig. S1 XRD pattern of NiOx nanoparticles prepared by chemical precipitation method

Fig. S2 Low magnification cross-sectional SEM images of (a) device B and (b) device C

Fig. S3 High magnification top-view SEM images of screen- printed (a) ZrO2 and (b) NiOx films

Table S1 Photovoltaic parameters for different devices with an aperture area of 0.07 cm2 under 1 sun (100 mW·cm-2) illumination

Sample	V_OC/V		J_SC/(mA·cm^-2)		FF/%		PCE/%
Sample	Reverse	Forward	Reverse	Forward	Reverse	Forward	Reverse	Forward
Device A	0.779	0.764	23.45	23.38	63.60	55.47	11.62	9.91
Device B	0.822	0.820	23.62	23.56	60.66	60.26	11.78	11.64
Device C	0.904	0.903	23.57	23.56	63.29	62.98	13.49	13.40

Fig. S4 Certified efficiency measurement report of device C

Table S2 Photovoltaic parameters of devices with different thicknesses of screen-printed NiOx layer

Sample	V_OC/V	J_SC/(mA·cm^-2)	FF/%	PCE/%
NiO_x (0.8 μm)	0.898	22.36	61.66	12.38
NiO_x (1.6 μm)	0.932	22.68	62.87	13.28
NiO_x (2.4 μm)	0.939	20.86	54.43	10.66

Table S3 Photovoltaic parameters of device A and C

Device	V_OC/V	J_SC/(mA·cm^-2)	FF/%	PCE/%
Device A	0.840	23.39	61.00	11.95
Device C	0.910	25.04	64.13	14.63

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