ThermoelectricProperties for CuInTe2-xSx (x = 0, 0.05, 0.1, 0.15) Solid Solution

doi:10.15541/jim20170051

Abstract

Abstract:

Diamond-like CuInTe₂ compound has attracted great attentions recently as a new thermoelectric material. Despitethe considerable thermoelectric performance, the relatively high thermal conductivity at low and medium temperature ranges restricted further improvement of thermoelectric performance. Alloying was demonstrated an effective way to introduce mass and strain fluctuationsto lower the lattice thermal conductivity in several typical thermoelectric materials. In this work, CuInTe_2-_xS_x (x=0, 0.05, 0.1, 0.15) solid solutions were fabricated by melting and annealing techniques. Phase purity and element distribution were examined by XRD and SEM-EDS measurements respectively. All the samples were pure phase and all the elements were distributed homogeneously. Callaway model was employed to analyze the thermal transport. It isfound that S substitution minimized the lattice thermal conductivity effectively, mainly due to extra phonon scattering induced by strain field fluctuation. However, itselectricalproperties were deteriorated by S doping, probably due to bigger band gap in CuInS₂ than in CuInTe₂.Therefore, if the electrical properties being improved by element doping, the CuInTe_2-_xS_x (x=0, 0.05, 0.1, 0.15) solid solutions will achieve high thermoelectric performance.

Key words: thermoelectric, diamond-like, strain field fluctuation, lattice thermal conductivity

CLC Number:

TQ174

QIN Yu-Ting, QIU Peng-Fei, SHI Xun, CHEN Li-Dong. ThermoelectricProperties for CuInTe_2-_xS_x (x = 0, 0.05, 0.1, 0.15) Solid Solution[J]. Journal of Inorganic Materials, 2017, 32(11): 1171-1176.

Figures/Tables 7

Fig. 1 Powder XRD patterns of CuInTe2-xSx (x = 0, 0.05, 0.1, 0.15) compoundsThe green lines are patterns from the PDF card for CuInTe2

Fig. 2 SEM image of CuInTe1.85S0.15 compounds(a),element mappings of all elements (b), Cu (c), In (d), Te (e)and S (f)

Fig. 3 Temperature dependences of (a) Seebeck coefficient (S), (b) electrical conductivity (σ), and (c) power factors (PFs) for CuInTe2-xSx (x = 0, 0.05, 0.1, 0.15) compounds

Fig. 4 Temperature dependences of hole concentration p (a)and hall mobility μH(b) for CuInTe2-xSx (x = 0, 0.05, 0.1, 0.15) compounds

Fig.5 Temperature dependence of thermal conductivity κ (a)and lattice thermal conductivity κL as a function of S contentat 300Κ and 800Κ (b) for CuInTe2-xSx (x = 0, 0.05, 0.1, 0.15) compounds

Fig. 6 The strainfield fluctuation scattering parameter ΓSand mass fluctuation scattering parameter ΓM as function of S content

Fig. 7 Temperature dependence of zT for CuInTe2-xSx (x = 0, 0.05, 0.1, 0.15) compounds

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