Journal of Inorganic Materials ›› 2017, Vol. 32 ›› Issue (2): 191-196.DOI: 10.15541/jim20160247
• Orginal Article • Previous Articles Next Articles
WANG Jin1, TAO Ke2, LI Guo-Feng1, LIANG Ke1, CAI Hong-Kun1
Received:
2016-04-12
Revised:
2016-06-29
Published:
2017-02-20
Online:
2017-01-13
CLC Number:
WANG Jin, TAO Ke, LI Guo-Feng, LIANG Ke, CAI Hong-Kun. Effect of Hydrogen Annealing on the Property of Low-temperature Epitaxial Growth of Sige Thin Films on Si Substrate[J]. Journal of Inorganic Materials, 2017, 32(2): 191-196.
Fig. 1 (a) Cross-sectional TEM image of epitaxial SiGe films on silicon substrate, (b)-(d) electron diffraction patterns for Si substrate, SiGe/Si interface and SiGe epilayer (e) which extracted from (d) for calculation The red circles mark the position for measurement of electron diffraction patterns
Fig. 5 SEM images of SiGe films after a selective wet etch, and pits with reversed pyramidal structure exhibited on the surface(a) As-deposited sample; (b) 650℃-annealed sample
SixGe1-x | Resistance /(Ω·cm) | Carrier concentration/cm-3 | Mobility/ (cm2·V-1·s-1) |
---|---|---|---|
As-grown | 0.402 | 6.35×1016 | 244 |
Annealed | 1.470 | 1.07×1016 | 409 |
Table 1 Electrical properties of SiGe thin films by Hall-effect measurement
SixGe1-x | Resistance /(Ω·cm) | Carrier concentration/cm-3 | Mobility/ (cm2·V-1·s-1) |
---|---|---|---|
As-grown | 0.402 | 6.35×1016 | 244 |
Annealed | 1.470 | 1.07×1016 | 409 |
Ref. | Temp./℃ | Thickness /nm | RMS roughness/nm | TDD/cm-2 | Mobility/(cm2·V-1·s-1) | |||
---|---|---|---|---|---|---|---|---|
As-grown | Annealed | As-grown | Annealed | Annealed | ||||
[21] | LT | 400 | 1224 | 0.40 | 0.7 | 1.70×108 | 1.00×107 | NA |
HT | 670 | |||||||
[22] | LT | 350 | 50 | 0.70 | NA | 5.00×105 | NA | 550 |
HT | 600 | 300 | ||||||
[23] | LT | 335 | 2000 | 0.60 | 1.6 | NA | 2.00×107 | NA |
HT | 670 | |||||||
[24] | LT | 400 | 2500 | 1.20 | 1.0 | NA | 6.00×106 | NA |
HT | 750 | |||||||
[25] | LT | 400 | 980 | 3.19 | 0.9 | NA | 6.00×106 | NA |
HT | 670 |
Table 2 Summary of the process parameters and film quality from literatures which reported the epitaxial growth of Ge by using low temperature/high temperature method
Ref. | Temp./℃ | Thickness /nm | RMS roughness/nm | TDD/cm-2 | Mobility/(cm2·V-1·s-1) | |||
---|---|---|---|---|---|---|---|---|
As-grown | Annealed | As-grown | Annealed | Annealed | ||||
[21] | LT | 400 | 1224 | 0.40 | 0.7 | 1.70×108 | 1.00×107 | NA |
HT | 670 | |||||||
[22] | LT | 350 | 50 | 0.70 | NA | 5.00×105 | NA | 550 |
HT | 600 | 300 | ||||||
[23] | LT | 335 | 2000 | 0.60 | 1.6 | NA | 2.00×107 | NA |
HT | 670 | |||||||
[24] | LT | 400 | 2500 | 1.20 | 1.0 | NA | 6.00×106 | NA |
HT | 750 | |||||||
[25] | LT | 400 | 980 | 3.19 | 0.9 | NA | 6.00×106 | NA |
HT | 670 |
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