宽带隙钙钛矿基二端叠层太阳电池复合层的研究进展

doi:10.15541/jim20230116

无机材料学报 ›› 2023, Vol. 38 ›› Issue (9): 1031-1043.DOI: 10.15541/jim20230116 CSTR: 32189.14.10.15541/jim20230116

所属专题：【能源环境】钙钛矿(202506)；【能源环境】太阳能电池(202506)

宽带隙钙钛矿基二端叠层太阳电池复合层的研究进展

董怡曼(), 谭占鳌()

北京化工大学北京软物质科学与工程高精尖创新中心, 北京 100029

收稿日期:2023-03-07 修回日期:2023-05-25 出版日期:2023-09-20 网络出版日期:2023-06-16
通讯作者: 谭占鳌, 教授. E-mail: tanzhanao@mail.buct.edu.cn
作者简介:董怡曼(1996-), 女, 博士研究生. E-mail: dongyiman1012@126.com
基金资助:
国家自然科学基金(21835006);国家自然科学基金(51873007)

Research Progress of Recombination Layers in Two-terminal Tandem Solar Cells Based on Wide Bandgap Perovskite

DONG Yiman(), TAN Zhan’ao()

Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China

Received:2023-03-07 Revised:2023-05-25 Published:2023-09-20 Online:2023-06-16
Contact: TAN Zhan’ao, professor. E-mail: tanzhanao@mail.buct.edu.cn
About author:DONG Yiman (1996-), female, PhD candidate. E-mail: dongyiman1012@126.com
Supported by:
National Natural Science Foundation of China(21835006);National Natural Science Foundation of China(51873007)

摘要/Abstract

摘要：

单结太阳电池的能量转换效率从根本上受限于Shockley-Queisser(S-Q)理论极限, 二端叠层结构可同时解决单结器件中面临的光谱失配和热弛豫能量损耗问题, 是突破S-Q极限最有前途的实用技术。二端叠层太阳电池中的复合层作为中间层的重要组分, 为来自两侧的电子和空穴提供复合位点, 避免了电荷堆积造成的开路电压损失并促进了电流流通, 是实现高性能叠层器件的关键因素之一。理想的复合层应具有较高电导率以提高电荷复合速率、高光学透过率以保证后结子电池的有效光吸收、良好的化学稳定性以降低溶剂对子电池的溶解伤害以及较低的制备成本以推动叠层电池的商业化生产进程。目前已有多种材料被应用于二端叠层太阳电池中, 如薄金属、透明导电氧化物、导电聚合物、氧化石墨烯等, 在钙钛矿-钙钛矿、钙钛矿-有机、钙钛矿-晶硅叠层器件中发挥了重要作用。本文归纳了不同类型叠层太阳电池复合层的研究进展, 系统介绍了复合层的种类、设计原则、制备工艺等, 对比其优缺点并提出了复合层目前存在的问题和面临的挑战, 为制备高效叠层电池提供了有益参考。

关键词: 二端叠层太阳电池, 复合层, 透明导电氧化物, 薄金属, 氧化石墨烯, 综述

Abstract:

Power conversion efficiency of single-junction solar cells is fundamentally limited by the Shockley- Queisser (S-Q) limit. The most promising practical technology to break through the S-Q limit is to use two-terminal tandem structure which can simultaneously solve the problems, spectral mismatch and thermal relaxation energy loss, in single-junction devices. As one of the important components of the interconnecting layer, the recombination layer in the two-terminal tandem solar cells can provide recombination sites for electrons and holes extracted from the electron transporting layer and the hole transporting layer, avoiding the open-circuit voltage loss caused by charge accumulation and promoting the current flow of tandem solar cells. The recombination layer is considered as one of the key factors of achieving high-performance tandem devices. The ideal recombination layer should possess high conductivity to improve the charge recombination rate, high optical transmittance to ensure effective light absorption of the rear subcells, good chemical stability to reduce the damage caused by the solvent, and low preparation cost to promote the commercial production process. At present, a variety of materials have been used in two-terminal tandem solar cells, such as thin metals, transparent conductive oxides, conductive polymers, graphene oxide, etc., which play an important role in perovskite-perovskite, perovskite-organic, and perovskite-silicon two terminal tandem devices. In this review, the research progress of recombination layers in different types of tandem solar cells is summarized, together with types, design principles, preparation processes, and their advantages and disadvantages. Meanwhile, problems and challenges of the current recombination layers are proposed, which provides a useful reference for the design of high-performance tandem cells.

Key words: two-terminal tandem solar cells, recombination layer, transparent conductive oxide, thin metal, graphene oxide, review

中图分类号:

TM914

董怡曼, 谭占鳌. 宽带隙钙钛矿基二端叠层太阳电池复合层的研究进展[J]. 无机材料学报, 2023, 38(9): 1031-1043.

DONG Yiman, TAN Zhan’ao. Research Progress of Recombination Layers in Two-terminal Tandem Solar Cells Based on Wide Bandgap Perovskite[J]. Journal of Inorganic Materials, 2023, 38(9): 1031-1043.

图/表 8

参考文献 64

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Front subcell		ICL	Rear subcell		V_OC/V	J_SC/(mA·cm^-2)	FF/%		PCE/%		Ref.
CsPbI₂Br		MoO₃/Ag/PFN-Br	PTB7-Th:IEICO-4F		1.82	13.20	71.68		17.24		[12]
FA_0.8MA_0.02Cs_0.18Pb_1.8Br_1.2		C₆₀/BCP/Ag/MoO_x	PBDBT-2F:Y6:PC₇₁BM		1.90	13.05	83.1		20.6		[30]
CsPbI_2.1Br_0.9		MoO₃/Ag/ZnO	PM6:Y6		1.89	12.77	74.81		18.06		[49]
CsPbI₂Br		MoO₃/Ag/PFN-Br	PM6:Y6-BO		1.96	13.30	80.8		21.1		[13]
FA_0.6MA_0.4Pb(I_0.6Br_0.4)₃		C₆₀/BCP/Ag/MoO_x	PTB7-Th: BTPV-4Cl-eC9		1.88	15.70	74.6		15.84		[50]
CsPbI₂Br		MoO₃/Ag/PFN-Br	PM6:Y6		2.10	13.09	75.1		20.6		[31]
CsPbI₂Br		MoO₃/Ag/PFN-Br	D18:Y6		2.22	12.68	76.0		21.4		[51]
FA_0.8Cs_0.2Pb(I_0.7Br_0.3)₃		C₆₀/BCP/Ag/MoO_x/ITO/ PEDOT:PSS	(FASnI₃)_0.6(MAPbI₃)_0.4:Cl		1.92	14.00	78.1		21.0		[25]
FA_0.8Cs_0.2Pb(I_0.6Br_0.4)₃		C₆₀/ALD SnO₂/Au/PEDOT:PSS	FA_0.7MA_0.3Pb_0.5Sn_0.5I₃		1.97	15.6	81.0		24.8		[32]
FA_0.8Cs_0.2Pb(I_0.6Br_0.4)₃		C₆₀/ALD SnO₂/Au/PEDOT:PSS	FA_0.7MA_0.3Pb_0.5Sn_0.5I₃		2.01	16.0	79.8		25.6		[26]
MA_0.96FA_0.1PbI₂Br(SCN)_0.12		PCBM/BCP/Au/MoO₃	PM6:CH1007		1.96	13.8	78.4		21.2		[52]
1.77 eV perovskite		C₆₀/ALD SnO_x/Au/PEDOT:PSS	1.23 eV Perovskite		1.95	15.8	75		23.1		[53]
Wide E_g perovskite		PCBM/BCP/Au/MoO₃	PM6:Y6		1.94	13.12	78.7		20.03		[54]
FA_0.8Cs_0.2PbI_1.95Br_1.05		C₆₀/ALD SnO₂/Au/PEDOT:PSS	FA_0.7MA_0.3Pb_0.5Sn_0.5I₃		2.00	15.8	78.3		24.7		[34]
FA_0.7Cs_0.3PbI_2.1Br_0.9		LiF/C₆₀/SnO₂/Au/PEDOT: PSS	(FASnI₃)_0.6(MAPbI₃)_0.4		2.12	15.03	80.1		25.5		[55]
FA_0.8Cs_0.2Pb(I_0.62Br_0.38)₃		C₆₀/ALD SnO₂/Au/PEDOT:PSS	FA_0.7MA_0.3Pb_0.5Sn_0.5I₃		2.03	16.5	79.9		26.7		[14]
FA_0.8Cs_0.2PbI_1.8Br_1.2		C₆₀/ALD SnO₂/Au/PEDOT:PSS	PM6:Y6		2.07	13.92	77.29		22.29		[15]
1.75 eV perovskite		LiF/C₆₀/ALD SnO_x/Au/PEDOT:PSS	FA_0.6MA_0.4Sn_0.6Pb_0.4I₃		2.20	15.1	81.6		27.2		[35]
Cs_0.2FA_0.8Pb(I_0.6Br_0.4)₃		C₆₀/ALD SnO_x/Au/PEDOT:PSS	Cs_0.05FA_0.7MA_0.25Pb_0.5Sn_0.5I₃		2.19	15.05	83.1		27.4		[56]
FA_0.8Cs_0.2PbI_2.1Br_0.9		LiF/C₆₀/ALD SnO₂/Au	FA_0.6MA_0.3Cs_0.1Pb_0.5Sn_0.5I₃		1.94	12.9	85.8		21.5		[57]
CsPbI_2.2Br_0.8		MoO₃/Au/ZnO	PM6:CH1007		2.10	13.90	76.86		22.43		[58]
FA_0.83Cs_0.17Pb(I_0.5Br_0.5)₃		SnO₂/ZTO/ITO/PEDOT:PSS	FA_0.75Cs_0.25Sn_0.5Pb_0.5I₃		1.66	14.5	70		16.9		[36]
MA_0.9Cs_0.1Pb(I_0.6Br_0.4)₃		C₆₀/Bis-C₆₀/ITO/PEDOT: PSS	MAPb_0.5Sn_0.5I₃		1.98	12.7	73		18.5		[16]
Wide E_g perovskite		nc-SiO_x:H/ITO/PTAA	Silicon		1.76	18.5	78.5		25.5		[17]
Cs_0.15(FA_0.83MA_0.17)_0.85Pb(I_0.8Br_0.2)₃		a-Si:H(n⁺)/ITO/PTAA	Silicon		1.80	17.8	79.4		25.4		[59]
Cs_0.1MA_0.9Pb(I_0.9Br_0.1)₃		a-Si:H(n⁺)/ITO/PTAA	Silicon		1.82	19.2	75.3		26.2		[38]
FA_0.8Cs_0.2 Pb(I_0.6Br_0.4)₃		C₆₀/ITO NCs/E-NiO_x	FA_0.8Cs_0.2Pb_0.5Sn_0.5I₃		1.90	15.4	80.4		23.5		[37]
Cs_0.2FA_0.8PbI_1.8Br_1.2		C₆₀/ALD SnO₂/ITO NCs	FAPb_0.5Sn_0.5I₃		2.03	16.2	80.3		26.3		[60]
Cs_0.1(MA_0.17FA_0.83)_0.9Pb (I_0.83Br_0.17)₃		a-Si:H(n)/ITO/NiO_x	Silicon		1.75	15.5	73.6		20.0		[61]
Wide E_g perovskite		nc-SiO_x(n)/ITO/NiO_x/2- PACz	Silicon		1.79	20.11	79.95		28.84		[39]
Wide E_g perovskite		a-Si:H(n)/ITO/NiO_x	Silicon		1.82	16.31	78.32		23.31		[62]
Cs_0.05(FA_0.77MA_0.23)_0.95Pb(I_0.77Br_0.23)₃		nc-SiO_x:H(n)/ITO	Silicon		1.90	19.54	80.90		29.83		[63]
Wide E_g perovskite		a-Si:H(i/n)/ITO/NiO	Silicon		1.85	19.8	78.9		28.9		[64]
MAPbI₃		p-aSi/IZO/PCBM	Silicon		1.69	15.8	79.9		21.4		[11]
1.79 eV perovskite		C₆₀/BCP/IZO/MoO_x	PM6:Y6:PC₇₁BM		2.06	14.83	77.2		23.6		[40]
FA_0.78Cs_0.22Pb(I_0.85Br_0.15)₃	Passivated ETL/IZO/SAM		Silicon	1.91		19.29		78.3		28.81	[42]
Cs_0.05MA_0.14FA_0.81Pb(I_0.8Br_0.2)₃	N doped nc-Si/IZO/2-PACz		Silicon	1.85		19.7		77.9		28.4	[41]
Wide E_g Perovskite	Poly-Si(n⁺)IZO		TOPCon	1.80		19.4		81.64		28.49	[43]
Cs_0.4FA_0.6PbI_1.95Br_1.05	(n⁺)C₆₀/SnO_1.76		Cs_0.05MA_0.45FA_0.5Pb_0.5Sn_0.5I₃	2.03		15.2		79.7		24.6	[44]
FA_0.8Cs_0.2Pb(I_0.5Br_0.5)₃	SiO_x/InO_x/MoO_x		PM6:Y6:PC₆₁BM	2.15		14.0		80		24.0	[45]
MAPbI₃	Spiro-OMeTAD/PEDOT: PSS/PEI		MAPbI₃	1.89		6.61		56		7.0	[47]
PBSeDTEG8:PC₆₁BM	TiO₂/PEDOT:PSS-PH500/ PEDOT:PSS 4083		MAPbI₃	1.52		10.05		67		10.23	[18]
MAPbBr₃	Spiro-OMeTAD/PEDOT: PSS/C₆₀		MAPbI₃	1.96		6.40		41		5.1	[48]
Cs_0.4FA_0.6PbI₂Br	C₆₀/SnO₂/Graphene oxide/PEDOT:PSS		Cs_0.2FA_0.8Pb_0.5Sn_0.5I₃	2.02		15.8		79.3		25.3	[23]
Cs_0.4FA_0.6PbI_2.16Br_0.84	C₆₀/SnO_2-_x/Graphene oxide/SnOCl		Cs_0.2FA_0.8Pb_0.5Sn_0.5I₃	2.05		16.2		79.3		26.3	[24]

Front subcell		ICL	Rear subcell		V_OC/V	J_SC/(mA·cm^-2)	FF/%		PCE/%		Ref.
CsPbI₂Br		MoO₃/Ag/PFN-Br	PTB7-Th:IEICO-4F		1.82	13.20	71.68		17.24		[12]
FA_0.8MA_0.02Cs_0.18Pb_1.8Br_1.2		C₆₀/BCP/Ag/MoO_x	PBDBT-2F:Y6:PC₇₁BM		1.90	13.05	83.1		20.6		[30]
CsPbI_2.1Br_0.9		MoO₃/Ag/ZnO	PM6:Y6		1.89	12.77	74.81		18.06		[49]
CsPbI₂Br		MoO₃/Ag/PFN-Br	PM6:Y6-BO		1.96	13.30	80.8		21.1		[13]
FA_0.6MA_0.4Pb(I_0.6Br_0.4)₃		C₆₀/BCP/Ag/MoO_x	PTB7-Th: BTPV-4Cl-eC9		1.88	15.70	74.6		15.84		[50]
CsPbI₂Br		MoO₃/Ag/PFN-Br	PM6:Y6		2.10	13.09	75.1		20.6		[31]
CsPbI₂Br		MoO₃/Ag/PFN-Br	D18:Y6		2.22	12.68	76.0		21.4		[51]
FA_0.8Cs_0.2Pb(I_0.7Br_0.3)₃		C₆₀/BCP/Ag/MoO_x/ITO/ PEDOT:PSS	(FASnI₃)_0.6(MAPbI₃)_0.4:Cl		1.92	14.00	78.1		21.0		[25]
FA_0.8Cs_0.2Pb(I_0.6Br_0.4)₃		C₆₀/ALD SnO₂/Au/PEDOT:PSS	FA_0.7MA_0.3Pb_0.5Sn_0.5I₃		1.97	15.6	81.0		24.8		[32]
FA_0.8Cs_0.2Pb(I_0.6Br_0.4)₃		C₆₀/ALD SnO₂/Au/PEDOT:PSS	FA_0.7MA_0.3Pb_0.5Sn_0.5I₃		2.01	16.0	79.8		25.6		[26]
MA_0.96FA_0.1PbI₂Br(SCN)_0.12		PCBM/BCP/Au/MoO₃	PM6:CH1007		1.96	13.8	78.4		21.2		[52]
1.77 eV perovskite		C₆₀/ALD SnO_x/Au/PEDOT:PSS	1.23 eV Perovskite		1.95	15.8	75		23.1		[53]
Wide E_g perovskite		PCBM/BCP/Au/MoO₃	PM6:Y6		1.94	13.12	78.7		20.03		[54]
FA_0.8Cs_0.2PbI_1.95Br_1.05		C₆₀/ALD SnO₂/Au/PEDOT:PSS	FA_0.7MA_0.3Pb_0.5Sn_0.5I₃		2.00	15.8	78.3		24.7		[34]
FA_0.7Cs_0.3PbI_2.1Br_0.9		LiF/C₆₀/SnO₂/Au/PEDOT: PSS	(FASnI₃)_0.6(MAPbI₃)_0.4		2.12	15.03	80.1		25.5		[55]
FA_0.8Cs_0.2Pb(I_0.62Br_0.38)₃		C₆₀/ALD SnO₂/Au/PEDOT:PSS	FA_0.7MA_0.3Pb_0.5Sn_0.5I₃		2.03	16.5	79.9		26.7		[14]
FA_0.8Cs_0.2PbI_1.8Br_1.2		C₆₀/ALD SnO₂/Au/PEDOT:PSS	PM6:Y6		2.07	13.92	77.29		22.29		[15]
1.75 eV perovskite		LiF/C₆₀/ALD SnO_x/Au/PEDOT:PSS	FA_0.6MA_0.4Sn_0.6Pb_0.4I₃		2.20	15.1	81.6		27.2		[35]
Cs_0.2FA_0.8Pb(I_0.6Br_0.4)₃		C₆₀/ALD SnO_x/Au/PEDOT:PSS	Cs_0.05FA_0.7MA_0.25Pb_0.5Sn_0.5I₃		2.19	15.05	83.1		27.4		[56]
FA_0.8Cs_0.2PbI_2.1Br_0.9		LiF/C₆₀/ALD SnO₂/Au	FA_0.6MA_0.3Cs_0.1Pb_0.5Sn_0.5I₃		1.94	12.9	85.8		21.5		[57]
CsPbI_2.2Br_0.8		MoO₃/Au/ZnO	PM6:CH1007		2.10	13.90	76.86		22.43		[58]
FA_0.83Cs_0.17Pb(I_0.5Br_0.5)₃		SnO₂/ZTO/ITO/PEDOT:PSS	FA_0.75Cs_0.25Sn_0.5Pb_0.5I₃		1.66	14.5	70		16.9		[36]
MA_0.9Cs_0.1Pb(I_0.6Br_0.4)₃		C₆₀/Bis-C₆₀/ITO/PEDOT: PSS	MAPb_0.5Sn_0.5I₃		1.98	12.7	73		18.5		[16]
Wide E_g perovskite		nc-SiO_x:H/ITO/PTAA	Silicon		1.76	18.5	78.5		25.5		[17]
Cs_0.15(FA_0.83MA_0.17)_0.85Pb(I_0.8Br_0.2)₃		a-Si:H(n⁺)/ITO/PTAA	Silicon		1.80	17.8	79.4		25.4		[59]
Cs_0.1MA_0.9Pb(I_0.9Br_0.1)₃		a-Si:H(n⁺)/ITO/PTAA	Silicon		1.82	19.2	75.3		26.2		[38]
FA_0.8Cs_0.2 Pb(I_0.6Br_0.4)₃		C₆₀/ITO NCs/E-NiO_x	FA_0.8Cs_0.2Pb_0.5Sn_0.5I₃		1.90	15.4	80.4		23.5		[37]
Cs_0.2FA_0.8PbI_1.8Br_1.2		C₆₀/ALD SnO₂/ITO NCs	FAPb_0.5Sn_0.5I₃		2.03	16.2	80.3		26.3		[60]
Cs_0.1(MA_0.17FA_0.83)_0.9Pb (I_0.83Br_0.17)₃		a-Si:H(n)/ITO/NiO_x	Silicon		1.75	15.5	73.6		20.0		[61]
Wide E_g perovskite		nc-SiO_x(n)/ITO/NiO_x/2- PACz	Silicon		1.79	20.11	79.95		28.84		[39]
Wide E_g perovskite		a-Si:H(n)/ITO/NiO_x	Silicon		1.82	16.31	78.32		23.31		[62]
Cs_0.05(FA_0.77MA_0.23)_0.95Pb(I_0.77Br_0.23)₃		nc-SiO_x:H(n)/ITO	Silicon		1.90	19.54	80.90		29.83		[63]
Wide E_g perovskite		a-Si:H(i/n)/ITO/NiO	Silicon		1.85	19.8	78.9		28.9		[64]
MAPbI₃		p-aSi/IZO/PCBM	Silicon		1.69	15.8	79.9		21.4		[11]
1.79 eV perovskite		C₆₀/BCP/IZO/MoO_x	PM6:Y6:PC₇₁BM		2.06	14.83	77.2		23.6		[40]
FA_0.78Cs_0.22Pb(I_0.85Br_0.15)₃	Passivated ETL/IZO/SAM		Silicon	1.91		19.29		78.3		28.81	[42]
Cs_0.05MA_0.14FA_0.81Pb(I_0.8Br_0.2)₃	N doped nc-Si/IZO/2-PACz		Silicon	1.85		19.7		77.9		28.4	[41]
Wide E_g Perovskite	Poly-Si(n⁺)IZO		TOPCon	1.80		19.4		81.64		28.49	[43]
Cs_0.4FA_0.6PbI_1.95Br_1.05	(n⁺)C₆₀/SnO_1.76		Cs_0.05MA_0.45FA_0.5Pb_0.5Sn_0.5I₃	2.03		15.2		79.7		24.6	[44]
FA_0.8Cs_0.2Pb(I_0.5Br_0.5)₃	SiO_x/InO_x/MoO_x		PM6:Y6:PC₆₁BM	2.15		14.0		80		24.0	[45]
MAPbI₃	Spiro-OMeTAD/PEDOT: PSS/PEI		MAPbI₃	1.89		6.61		56		7.0	[47]
PBSeDTEG8:PC₆₁BM	TiO₂/PEDOT:PSS-PH500/ PEDOT:PSS 4083		MAPbI₃	1.52		10.05		67		10.23	[18]
MAPbBr₃	Spiro-OMeTAD/PEDOT: PSS/C₆₀		MAPbI₃	1.96		6.40		41		5.1	[48]
Cs_0.4FA_0.6PbI₂Br	C₆₀/SnO₂/Graphene oxide/PEDOT:PSS		Cs_0.2FA_0.8Pb_0.5Sn_0.5I₃	2.02		15.8		79.3		25.3	[23]
Cs_0.4FA_0.6PbI_2.16Br_0.84	C₆₀/SnO_2-_x/Graphene oxide/SnOCl		Cs_0.2FA_0.8Pb_0.5Sn_0.5I₃	2.05		16.2		79.3		26.3	[24]

宽带隙钙钛矿基二端叠层太阳电池复合层的研究进展

Research Progress of Recombination Layers in Two-terminal Tandem Solar Cells Based on Wide Bandgap Perovskite

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