氧化气氛对CaCu3Ti4O12陶瓷显微结构及介电性能的影响

doi:10.15541/jim20150184

摘要/Abstract

摘要：

采用固相法合成了CaCu₃Ti₄O₁₂陶瓷, 研究了氧化气氛热处理对其显微结构和介电性能的影响。结果表明, 氧化气氛热处理后, CaCu₃Ti₄O₁₂陶瓷的介电常数略微下降, 介电损耗角正切值得到有效抑制, 降至0.03~0.04。在183~273 K温度范围内, CaCu₃Ti₄O₁₂陶瓷总的介电损耗可以分解成低频电导损耗和高频的两个弛豫损耗峰, 氧化气氛热处理后低频电导损耗的贡献下降较为明显。对CaCu₃Ti₄O₁₂陶瓷的晶粒、晶界进行阻抗分析, 发现在393 K时晶界电阻值从1.8×10⁴Ω增大到8.6×10⁴ Ω。伏安特性(J-E)结果表明氧化气氛热处理使CaCu₃Ti₄O₁₂陶瓷的击穿场强和非线性系数分别从226 V/mm、3.52上升到397 V/mm、4.51, 晶界势垒高度从0.56 eV增大到0.63 eV。

关键词: CaCu3Ti4O12陶瓷, 氧化气氛, 介电性能

Abstract:

CaCu₃Ti₄O₁₂ ceramics were synthesized by using the solid-state reaction method, and the roles of heat-treatment in the oxidizing atmosphere on the microstructure and dielectric properties were investigated in this work. It is indicated that after heat-treatment in the oxidizing atmosphere, the dielectric constant is decreased slightly and the dielectric loss tangent is effectively suppressed to 0.03-0.04. In the temperature range of 183-273 K, the dielectric loss is composed of conductance loss and two relaxation loss peaks. It is worth noting that the conductance loss at low frequency is reduced obviously. The result impedance spectra analysis reveals that the grain boundary resistance of CaCu₃Ti₄O₁₂ ceramics is boosted from 1.8×10⁴ Ω to 8.6×10⁴ Ω at 393 K. Furthermore, the results from volt-ampere characteristics (J-E) exhibit that the breakdown field and nonlinear coefficient of CaCu₃Ti₄O₁₂ ceramics are increased from 226 V/mm and 3.52 to 397 V/mm and 4.51, respectively. The barrier height is also increased from 0.56 eV to 0.63 eV.

Key words: CaCu3Ti4O12 ceramics, oxidizing atmosphere, dielectric properties

中图分类号:

TM283

赵学童, 任路路, 廖瑞金, 李建英, 王飞鹏. 氧化气氛对CaCu₃Ti₄O₁₂陶瓷显微结构及介电性能的影响[J]. 无机材料学报, 2015, 30(12): 1303-1309.

ZHAO Xue-Tong, REN Lu-Lu, LIAO Rui-Jin, LI Jian-Ying, WANG Fei-Peng. Effect of the Oxidizing Atmosphere on the Microstructure and Dielectric Properties of CaCu₃Ti₄O₁₂ Ceramics[J]. Journal of Inorganic Materials, 2015, 30(12): 1303-1309.

图/表 8

图 1 (a)CCTO-A和(b)CCTO-B陶瓷试样的XRD图谱

Fig. 1 XRD patterns of CCTO-A(a) and CCTO-B(b) ceramics

图2 (a)CCTO-A和(b)CCTO-B陶瓷表面的SEM照片

Fig. 2 SEM images of CCTO-A (a) and CCTO-B(b) ceramics

图 3 室温下CCTO-A和CCTO-B试样的介电频谱

Fig. 3 Dielectric frequency spectra of CCTO-A and CCTO-B samples measured at room temperature

图 4 183~273 K温度下CCTO 陶瓷试样的介电谱图及活化能计算

Fig. 4 Dielectric frequency spectra of CCTO samples measured in 183-273 K and the calculation of the activation energy for the relaxation peaks. The fitting results of dielectric loss at 273 K in the inset of (a) and (c). (a, b) CCTO-A; (c, d) CCTO-B

图 5 高温393 K CCTO-A和CCTO-B试样的阻抗复平面

Fig. 5 Complex impedance plane measured at 393 K for CCTO-A and CCTO-B samples. Inset is expanded curves of the high-frequency data

图 6 在温度348~473 K范围内 CCTO-A(a)和CCTO-B(b)试样的阻抗复平面及其电导率(c)随温度的变化

Fig. 6 Complex impedance plane measured in 348-473 K for CCTO-A (a) and CCTO-B (b), and the variation of the conductivity for the samples (c) with increasing temperature

图 7 室温下CCTO-A和CCTO-B试样的J-E特性曲线

Fig. 7 J-E curves measured at room temperature for CCTO-A and CCTO-B samples

图 8 在308~368 K范围内 CCTO-A(a)和CCTO-B(b)试样的lnJ与E1/2曲线

Fig. 8 lnJ versus E1/2 plot for CCTO-A (a) and CCTO-B (b) in the temperature of 308-368 K. Calculation of barrier height is shown in the inset (E=0)

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氧化气氛对CaCu₃Ti₄O₁₂陶瓷显微结构及介电性能的影响

Effect of the Oxidizing Atmosphere on the Microstructure and Dielectric Properties of CaCu₃Ti₄O₁₂ Ceramics

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