无机材料学报

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C/C复合材料MoSi2-Mo5Si3/SiC涂层的制备及组织结构

杨鑫1, 邹艳红2, 黄启忠1, 苏哲安1, 王秀飞1, 张明瑜1
  

  1. 中南大学 1. 粉末冶金国家重点实验室; 2. 材料科学与工程博士后流动站, 长沙 410083
  • 收稿日期:2007-07-28 修回日期:2007-09-07 出版日期:2008-07-20 网络出版日期:2008-07-20

Preparation and Structure of MoSi2-Mo5Si3/SiC Multi-coating for Carbon/Carbon Composites

YANG XIN 1, ZOU Yan-Hong2, HUANG Qi-Zhong1, SU Zhe-An1, WANG Xiu-Fei 1, ZHANG Ming-Yu1   

  1. 1. State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, China;
    2. Materials Science and Engineering Post-doctoral Research Center, Central South Vniversity, Changsha 410083, China
  • Received:2007-07-28 Revised:2007-09-07 Published:2008-07-20 Online:2008-07-20

摘要: 采用化学气相反应法和料浆刷涂反应法, 在C/C复合材料表面制备了MoSi2-Mo5Si3/SiC复合涂层, 借助X射线衍射仪、扫描电镜及能谱等分析手段, 对涂层的形成、组织结构进行了研究, 并初步考察了涂层的高温抗氧化性能. 结果表明: 制备的复合涂层厚度为400μm左右, 主要由β-SiC、MoSi2及少量的Mo5Si3组成. 1350℃等温氧化10h后, 复合涂层试样的氧化失重率只有1.21%, 明显低于C/C复合材料SiC单涂层试样, 其高温抗氧化性能得到明显的提高. 因此, 与C/C复合材料SiC单涂层相比, 经封填改性制得的复合涂层结构更致密, 具有良好的高温抗氧化性能.

关键词: C/C复合材料, 抗氧化涂层, MoSi2, SiC

Abstract: To prevent carbon/carbon composites from oxidation, a MoSi2-Mo5Si3/SiC multi-coating was prepared by the
chemical vapor reaction (CVR) technique and slurry method. The formation mechanism and structure of the multi-coating were studied by using XRD, SEM and EDS analysis, and then the anti-oxidation property of the multi-coating was investigated. The results show that the thickness of obtained coating is about 400μm, and the main phase are composed of β-SiC, MoSi2 and Mo5Si3. After oxidation in air at 1350℃ for 10h, the weight loss of the multi-coating is only 1.21%, which is obviously lower than that of single-layer SiC coating. The phases of MoSi2 and Mo5Si3 formed in the MoSi2-Mo5Si3/SiC multi-coating fill the cracks and holes in the monolayer SiC coating, which can improve the anti-oxidation ability of the multi-coating. So the multi-coating made by the complex technology possesses more compact structure and better anti-oxidation property.

Key words: carbon/carbon composites, anti-oxidation coating, MoSi2, SiC

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