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Si4+离子对Y3+:PbWO4晶体闪烁性能及辐照硬度的影响

张昕; 廖晶莹; 谢建军; 沈炳孚; 邵培发; 李长泉; 袁辉; 殷之文   

  1. 中国科学院上海硅酸盐研究所 上海 200050

  • 收稿日期:2001-09-03 修回日期:2001-09-25 出版日期:2002-09-20 网络出版日期:2002-09-20

Influence of Si4+ Ion on Scintillation Properties and Radiation Hardness of Y3+ Doping PbWO4 Crystals

ZHANG Xin; LIAO Jing-Ying; XIE Jian-Jun; SHEN Bing-Fu; SHAO Pei-Fa; LI Chang-Quan; YUAN Hui; YIN Zhi-Wen   

  1. Shanghai Institute of Ceramics; Chinese Academy of Sciences; Shanghai 200050; China
  • Received:2001-09-03 Revised:2001-09-25 Published:2002-09-20 Online:2002-09-20

摘要:

Y3+离子掺杂钨酸铅晶体特殊的低剂量率辐照行为一般在晶体顶端表现更为明显,以往研究认为该现象起因于晶体中有效分凝系数<1的Na+、K+和Si4+等杂质在顶端的富集.本文研究了Si4+掺杂的Y3+:PWO晶体,对晶体顶端和晶种端的分段晶体测试了退火温度对晶体透过率和辐照硬度的影响,结果发现:在实验所涉及的掺杂浓度范围内,Si4+离子杂质对Y3+:PWO晶体的辐照硬度及透过率无影响,可以认为Y3+:PWO晶体特殊的低剂量率辐照行为和晶体中的Si4+离子含量无关.

关键词: 钨酸铅, 掺杂, 辐照硬度, 闪烁性能

Abstract: Based on the fact that the exceptional irradiation behaviors are prominent at the top part of Y3+ doping PWO crystals while exposed to low dose rate γa-ray,
previous studies concluded that this phenomenon was caused by enrichment of impurities such as Na+, K+ and Si4+ whose segregation coefficient are smaller
than 1. In this paper, the relationships among annealing, optical transmission and radiation hardness of Si4+ ion contained Y3+: PWO crystals were
investigated. The experimental results show that the Si4+ ions do not influence optical transmission and radiation hardness of Y3+: PWO crystals at the concentration
involved in the study. It can be concluded that the exceptional irradiation behaviors of Y3+: PWO crystals do not relate to the contamination of Si4+ ion.

Key words: lead tungstate, doping, radiation hardness, scintillation

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