膜/块体结构氧化物复合磁电材料研究进展

doi:10.15541/jim20140019

无机材料学报 ›› 2014, Vol. 29 ›› Issue (9): 905-911.DOI: 10.15541/jim20140019 CSTR: 32189.14.10.15541/jim20140019

膜/块体结构氧化物复合磁电材料研究进展

王婧¹, 吴霞², 邓朝勇², 朱孔军¹, 南策文³

(1. 南京航空航天大学航空宇航学院, 机械结构力学及控制国家重点实验室, 南京210016; 2. 贵州大学电子信息学院, 贵阳550025; 3. 清华大学材料学院, 新型陶瓷与精细工艺国家重点实验室, 北京100084)

收稿日期:2014-01-08 修回日期:2014-03-09 出版日期:2014-09-17 网络出版日期:2014-08-21
基金资助:
国家自然科学基金(51221291, 51202118, 51172108);博士学科点专项科研基金(20120002120012);江苏高校优势学科建设工程资助项目

Research Progress of Film/Bulk Oxide Magnetoelectric Composites

WANG Jing¹, WU Xia², DENG Chao-Yong², ZHU Kong-Jun¹, NAN Ce-Wen³

(1. State Key Laboratory of Mechanics and Control of Mechanical Structures, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China; 2. School of Electronics and Information Engineering, Guizhou University, Guiyang 550025, China; 3. State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China)

Received:2014-01-08 Revised:2014-03-09 Published:2014-09-17 Online:2014-08-21
Supported by:
National Natural Science Foundation of China (51221291, 51202118, 51172108);Doctoral Fund of Ministry of Education of China (20120002120012);A Project Funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions

摘要/Abstract

摘要：

由铁氧体(如: CoFe₂O₄, NiFe₂O₄)和铁电相(如: BaTiO₃, Pb(Zr_xTi_1-_x)O₃)组成的复合材料是经典的复合磁电材料, 也是最早在室温下观察到大磁电耦合效应的复合材料。这类复合材料的制备通常是在高于1200℃的高温条件下将铁氧体相和铁电相两相共烧而成。然而, 在高温过程中不可避免的存在原子互扩散及两相界面反应, 甚至出现微裂纹。本文综合介绍了几种通过直接在一种铁性氧化物块体上生长另一种铁性陶瓷膜的方法, 从而实现铁电、铁磁两相之间的低温复合(一般不高于800℃), 避免了高温共烧过程中的固有问题, 并展示了此类膜/块体复合体系的磁电耦合性能常用的表征方法。

关键词: 膜/块体复合, 磁电效应, 低温制备, 综述

Abstract:

Composite ceramics of ferrites (e.g., CoFe₂O₄, NiFe₂O₄) and ferroelectrics (e.g., BaTiO₃, Pb(Zr_xTi_1-_x)O₃) are classical magnetoelectric (ME) materials, which are also the first composites found to exhibit large room-temperature ME effect. These composites are generally fabricated via sintering at high temperature of over 1200℃. However, such high-temperature co-firing processing yields atom inter-diffusion and/or chemical reactions between two phases, or even microcracks. In this review, several low-temperature (normally below 800℃) synthesis routes of depositing the ferromagnetic (ferroelectric) films on ferroelectric (ferromagnetic) bulk single-crystals or ceramics are summarized. By such means, the above-mentioned problems can be avoided to improve the ME effect across the interface. Methods frequently used for characterizing the ME effect in these ceramics-based composites films are also discussed.

Key words: film/bulk composite, magnetoelectric effect, low-temperature growth

中图分类号:

TQ174

王婧, 吴霞, 邓朝勇, 朱孔军, 南策文. 膜/块体结构氧化物复合磁电材料研究进展[J]. 无机材料学报, 2014, 29(9): 905-911.

WANG Jing, WU Xia, DENG Chao-Yong, ZHU Kong-Jun, NAN Ce-Wen. Research Progress of Film/Bulk Oxide Magnetoelectric Composites[J]. Journal of Inorganic Materials, 2014, 29(9): 905-911.

图/表 7

图1 PZT膜/LSMO单晶复合结构的磁电耦合系数在不同温度下随直流磁场的变化关系, 插图为不同温度下LSMO的磁致伸缩性能[14]

Fig. 1 ME voltage of PZT/LSMO vs static magnetic ﬁeld at different temperatures. The inset shows the magnetostrictive strain of LSMO at different temperatures[14]

图2 BTO膜/CFO陶瓷复合结构的磁电耦合系数随偏置磁场的变化关系, 插图为测试结构示意图[15]

Fig. 2 Magnetic bias H dependence of the ME coefficient of the BTO/CFO composite. The inset shows the schematic of the measurement[15]

图3 PZT/CFO-A和PZT/CFO-B的面内磁电耦合系数随外加偏置直流磁场的变化关系, 插图为测量结构示意图[16]

Fig. 3 Magnetic bias dependence of the in-plane magnetoelectric coefficient αE of PZT/CFO-A and PZT/CFO-B samples, The inset is a schematic of measurement [16]

图4 MPB-PZT/Ag/CFO, PZT-PZN/Ag/CFO和商用PZT/Ag/CFO磁电耦合系数随外加偏置直流磁场的变化关系, 插图为CFO的dE/dH和|dλ11/dH|随磁场的变化关系[20]

Fig. 4 Magnetoelectric voltage coefficient of MPB-PZT/Ag/CFO, PZT-PZN/Ag/CFO and PZT/Ag/CFO as a function of applied magnetic bias. The inset shows dE/dH and |dλ11/dH| with applied magnetic field[20]

图5 LSMO/BTO结构在不同电场和温度下的磁化强度相对变化[28]

Fig. 5 ΔM/M0 of LSMO/BTO at different temperatures upon electric fields[28]

图6 (a) LSMO薄膜磁化强度和(b) PMN-PT单晶基片的面内应变随基片厚度方向加载电场的变化(记录了三个循环的数值)[26-27]

Fig. 6 Dependence of (a) the magnetization of LSMO film and (b) in-plane strain of PMN-PT on the electric field applied to the substrate (recorded for three cycles)[26-27]

图7 外加磁场沿PZN-PT基片的(a) [100]和(b)[01 ]方向时, 不同电场强度下的铁磁共振吸收谱, 沿面内[100]和[01 ]两个方向时, 不同加载电场强度下的吸收谱峰位(c)[33]

Fig. 7 FMR absorption spectra at different electric ﬁelds while the external magnetic ﬁelds was applied along (a) [100] and (b)[01 ] directions of PZN-PT, comparison of FMR absorption peak along [100] and [01 ] at different electric fields (c)[33]

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膜/块体结构氧化物复合磁电材料研究进展

Research Progress of Film/Bulk Oxide Magnetoelectric Composites

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