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无机材料学报

无机材料学报

• 研究论文 • 上一篇    下一篇

退火温度对CsI(Tl)薄膜微观结构和闪烁性能的影响

程 峰1,2, 钟玉荣2, 王宝义2, 王天民3, 魏 龙2   

  1. 1. 兰州大学物理科学与技术学院, 兰州 730000; 2. 中国科学院高能物理研究所, 北京 100049; 3. 北京航空航天大学理学院, 北京 100083
  • 收稿日期:2007-09-04 修回日期:2007-11-02 出版日期:2008-07-20 网络出版日期:2008-07-20

Effect of Annealing Temperature on the Microstructure and Scintillation Properties of CsI(Tl) Films

CHENG Feng1,2, ZHONG Yu-Rong2, WANG Bao-Yi2, WANG Tian-Min3, WEI Long2   

  1. 1. School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China; 2. Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China; 3. School of Science, Beijing University of Aeronautics and Astronautics, Beijing 100083; China
  • Received:2007-09-04 Revised:2007-11-02 Published:2008-07-20 Online:2008-07-20

PDF (PC)

2240

被引次数

2

摘要：

采用真空热蒸发法制备了CsI(Tl)薄膜, 然后进行了不同温度的真空热处理．用X射线衍射仪、扫描电子显微镜、X射线荧光光谱仪及正电子寿命谱仪对CsI(Tl)薄膜样品进行了分析, 并测得了样品的光产额．结果表明, 该CsI(Tl)薄膜沿(200)晶面择优取向生长．经过较低温度退火, CsI薄膜中的Tl+离子向薄膜表面扩散, 薄膜中缺陷数量增加, 且尺寸较大, 光产额略微增高．经过250℃退火, 薄膜中低温退火所形成缺陷得到恢复, 薄膜缺陷尺寸变小, 且数目减少, 具有较好的结晶状态, 光产额提高．经过400℃退火, 薄膜结构发生显著变化, 薄膜中缺陷大幅增加, 结晶状态变差, Ti+含量减少, 光产额急剧下降．

关键词: CsI薄膜, 微观结构, 闪烁性能

Abstract: CsI(Tl) films were prepared by thermal evaporation and annealed at various temperatures. Structure and scintillation properties of the films were examined using X-ray diffraction, scanning electron microscope, X-ray fluorescence spectrometry, positron annihilation lifetime spectroscope and scintillation pulse height spectrometry. Results show that the CsI films are in micro-columnar structure with a preferential (200) orientation. When the sample is annealed at 150℃, Tl+ ions diffuse to the sample surface. Consequently, the amount and size of the vacancy type of defects increase. However, the light yield increases a little after annealed. The samples annealed at 250℃ have a good crystalline state and scintillation properties. As the annealing temperature increases to 400℃, the light output of the samples decreases seriously due to the dramatic change of their microstructure and the decrease of Ti+.

Key words: CsI films, microstructure, scintillation properties

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