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喷雾热解法生长N掺杂ZnO薄膜机理分析

赵俊亮1,2; 李效民1; 边继明1,2; 张灿云1,2; 于伟东1; 高相东1   

  1. 1. 国科学院上海硅酸盐研究所高性能陶瓷和超微结构国家重点实验室, 上海 200050; 2. 中国科学院研究生院, 北京 100039
  • 收稿日期:2004-06-23 修回日期:2004-09-09 出版日期:2005-07-20 网络出版日期:2005-07-20

Growth Mechanism for N-doped ZnO Films Grown by Spray Pyrolysis Method

ZHAO Jun-Liang1,2; LI Xiao-Min1; BIAN Ji-Ming1,2; ZHANG Can-Yun1,2; YU Wei-Dong1; GAO Xiang-Dong1   

  1. 1. Key Laboratory of High Performance Ceramics and Superfine Microstructure; Shanghai Institute of Ceramics; Chinese Academy of Sciences; Shanghai 200050; China; 2. Graduate School of Chinese Academy of Sciences; Beijing 100039; China
  • Received:2004-06-23 Revised:2004-09-09 Published:2005-07-20 Online:2005-07-20

摘要: 通过超声喷雾热解工艺,以醋酸锌和醋酸铵的混合水溶液为前驱溶液,在单晶Si(100) 衬底上制备了N掺杂ZnO薄膜,采用热质联用分析(TG—DSC—MS)、X射线衍射(XRD)、场发射扫描电镜(FESEM)和霍耳效应(Hall-effect)测试等手段研究了喷雾热解工艺下N掺杂ZnO薄膜的生长机理、晶体结构和电学性能.结果表明,随衬底温度的不同,薄膜呈现出不同的生长机理,从而影响薄膜的晶体结构和电学性能.在优化的衬底温度下,实现了ZnO薄膜的p型掺杂,得到的p型ZnO薄膜具有优异的电学性能,载流子浓度为3.21×1018cm-3,霍耳迁移率为110cm2·V-1s-1,电阻率为1.76×10-2Ω·cm.

关键词: p型ZnO薄膜, 喷雾热解, 掺杂, 生长机理

Abstract: N-doped ZnO films were grown at Si(100) substrates by ultrasonic spray pyrolysis with the precursor of zinc acetate and ammonium acetate. Thermal-mass spectrometric analysis (TG-DSC-MS),
X-ray diffraction (XRD), and field emission scanning electron microscope (FESEM) were employed to analyze the growth mechanism, crystal structure and
electrical properties of films. Results show that the films grown at different substrate temperatures show different growth mechanisms, which could influence
crystal structure and electrical properties of films. The successful p-type doping can be realized at an optimized substrate temperature. The p-type ZnO
film shows excellent electrical properties such as a hole concentration of 3.70×1018cm-3, hole mobility of 110cm2·-1s-1
and resistivity of 1.4×10-2Ω·cm.

Key words: p-type ZnO film, spray pyrolysis, dope, growth mechanism

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