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V2O5熔体的微量氧化还原研究

魏劲松; 赵康; 谷臣清   

  1. 西安理工大学材料科学与工程学院, 西安 710048
  • 收稿日期:2000-06-07 修回日期:2000-07-17 出版日期:2001-07-20 网络出版日期:2001-07-20

Study on Miniamount Redox in Melting V2O5

WEI Jing-Song; ZHAO Kang; GU Chen-Qing   

  1. School of Materials Science & Engineering; Xi an University of Technology; Xi an 710048; China
  • Received:2000-06-07 Revised:2000-07-17 Published:2001-07-20 Online:2001-07-20

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摘要： 将７００、８００、１１００℃三种温度下的Ｖ２Ｏ５熔体制得Ｖ２Ｏ５溶胶，在非晶玻璃基片上将Ｖ２Ｏ５溶胶制成Ｖ２Ｏ５凝胶薄膜试样．通过对Ｖ２Ｏ５凝胶薄膜试样的电阻随温度的变化测试和电子能谱（ＥＳＣＡ）和Ｘ射线衍射分析发现Ｖ２Ｏ５凝胶薄膜中有四价钒的存在，本文从Ｖ２Ｏ５熔体的微量氧化还原和晶体结构的角度分析讨论了微量氧化还原影响钒离子价态变化的机理．

关键词: 溶胶-凝胶, 薄膜, V2O5

Abstract: The V2O5 melting prepared under 750, 800 and 1100℃ separately were made into V2O5 sol by quenching, and then V2O5 gel thin films were obtained by dipping non-crystal glass substrates into V2O5 sol. The tetravalence vanadium was found in V2O5 gel thin films by measuring the electrical resistance change of V2O5 gel thin films with temperature, ESCA and X-ray diffraction analysis. in this paper, from miniamount redox in melting V2O5 and crystal structure, the influencing mechanism of miniamount redox on changing valence of vanadium was analyzed and discussed in detail.

Key words: sol-gel, thin films, V2O5

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