铜对双靶共溅制备热电薄膜输运性能的影响

doi:10.3724/SP.J.1077.2013.13385

无机材料学报 ›› 2014, Vol. 29 ›› Issue (2): 215-219.DOI: 10.3724/SP.J.1077.2013.13385 CSTR: 32189.14.SP.J.1077.2013.13385

铜对双靶共溅制备热电薄膜输运性能的影响

曹丽莉，王瑶，邓元，罗炳威，祝薇，史永明, 林桢

(特种功能材料与薄膜北京市重点实验室, 北京航空航天大学材料学院，北京 100191)

收稿日期:2013-08-05 修回日期:2013-09-16 出版日期:2014-02-20 网络出版日期:2014-01-17
作者简介:曹丽莉. E-mail: youyidiyi_04caihua@163.com
基金资助:
National Natural Science Foundation of China(50772005, 51002006); National High Technology Research and Development Program of China(2009AA03Z322); Fundamental Research Funds for the Central Universities and Key Laboratory of Photochemical Conversion and Optoelectronic Materials, TIPC, CAS

Influence of Cu on Transport Properties of Thermoelectric Thin Film Fabricated via Magnetron Co-sputtering Method

CAO Li-Li, WANG Yao, DENG Yuan, LUO Bing-Wei, ZHU Wei, SHI Yong-Ming，LIN Zhen

(Beijing Key Laboratory of Special Functional Materials and Films, School of Material Science and Engineering, Beihang University, Beijing 100191, China)

Received:2013-08-05 Revised:2013-09-16 Published:2014-02-20 Online:2014-01-17
About author:CAO Li-Li(1986-), female, candidate of PhD. E-mail: youyidiyi_04caihua@163.com
Supported by:
National Natural Science Foundation of China(50772005, 51002006); National High Technology Research and Development Program of China(2009AA03Z322); Fundamental Research Funds for the Central Universities and Key Laboratory of Photochemical Conversion and Optoelectronic Materials, TIPC, CAS

摘要/Abstract

摘要： 采用双靶共溅法制备了铜掺杂的碲化铋锑热电薄膜，铜与碲化铋锑共溅的方法有利于形成沿c轴方向择优生长的碲化铋锑薄膜。结果表明，铜原子均匀的掺杂在碲化铋锑薄膜材料中。由于铜原子有利于提高载流子迁移率，薄膜材料的电导率随着铜掺杂比例的提高得到了极大的提升。当铜靶的溅射功率为20 W时，可以得到最高的电导率(15 × 10⁴ S/m)，同时功率因子的最佳值可提升到20 μW/(cm?K²)。

关键词: 半导体, 薄膜, 热电性能, 磁控溅射

Abstract: A simple magnetron co-sputtering method was used to fabricate Cu dispersed Bi_0.5Sb_1.5Te₃ thin films, and the co-sputtering method was beneficial to the preferential growth of Bi_0.5Sb_1.5Te₃ thin films along c-axis. Cu atoms were well-dispersed in the nano-structured materials. The electrical conductivity sharply increased with the increasing content of Cu due to the effect of Cu on transport property. For Cu target sputtering power of 20 W, a maximum power factor of 20 μW/(cm?K²) with an electrical conductivity of 15 × 10⁴ S/m at 355 K were achieved.

Key words: semiconductors, thin films, thermoelectric properties, magnetron sputtering

中图分类号:

TB34

曹丽莉，王瑶，邓元，罗炳威，祝薇，史永明, 林桢. 铜对双靶共溅制备热电薄膜输运性能的影响[J]. 无机材料学报, 2014, 29(2): 215-219.

CAO Li-Li, WANG Yao, DENG Yuan, LUO Bing-Wei, ZHU Wei, SHI Yong-Ming，LIN Zhen. Influence of Cu on Transport Properties of Thermoelectric Thin Film Fabricated via Magnetron Co-sputtering Method[J]. Journal of Inorganic Materials, 2014, 29(2): 215-219.

参考文献

[1] Zhang Y C, Snedaker M L, Birkel C S, et al. Silver-based intermetallic heterostructures in Sb2Te3 thick films with enhanced thermoelectric power factors. Nano Lett., 2012, 12(2): 1075–1080.

[2] Miao L, Tanemura S, Huang R, et al. Large Seebeck coefficients of protonated titanate nanotubes for high-temperature thermoelectric conversion. Appl. Mater. Inter., 2010, 2(8): 2355–2359.

[3] Soni A, Zhao Y, Yu L, et al. Enhanced thermoelectric properties of solution grown Bi2Te3-xSex nanoplatelet composites. Nano Lett., 2012, 12(3): 1203–1209.

[4] Vineis C J, Shakouri A, Majumdar A, et al. Nanostructured thermoelectrics: big efficiency gains from small features. Adv. Mater., 2010, 22(36): 3970–3980.

[5] Harman T C, Taylor P J, Walsh M P, et al. Quantum dot superlattice TE materials and devices. Science, 2002, 297: 2229–2232.

[6] Venkatasubramanian R, Siivola E, Colpitts T, et al. Thin-film thermoelectric devices with high room-temperature figures of merit. Nature, 2001, 413: 597–602.

[7] Kim W, Singer S L,Majumdar A, et al. Cross-plane lattice and electronic thermal conductivities of ErAs:InGaAs/InGaAlAs superlattices. Appl. Phys. Lett., 2006, 88(24): 242107–1–3.

[8] Zide J M O, Bahk J H,? Singh R, et al.?High efficiency semimetal/semiconductor nanocomposite thermoelectric materials. J. Appl. Phys., 2010, 108(12): 123702–1–5.

[9] Kim I H, Choi S M, Seo W S, et al. Thermoelectric properties of Cu-dispersed Bi0.5Sb1.5Te3. Nanoscale Res. Lett., 2012, 7(2): 1–6.

[10] Nolas G S, Sharp J, Goldsmid H J. Thermoelectrics Basic Principles and New Materials Developments. New York: Springer, 2001: 1–12.

[11] Naylor A J, Koukharenko E, Nandhakumar I S, et al. Surfactant- mediated electrodeposition of bismuth telluride films and its effect on microstructural properties. Langmuir, 2012, 28: 8296– 8299.

[12] Polvani D A, Meng J F, Chandra N V, et al. Large improvement in thermoelectric properties in pressure-tuned p-type Sb1.5Bi0.5Te3. Chem. Mater., 2001, 13(6): 2068–2071.

[13] Walachová J, Zeip R, Zelinka J, et al. Room-temperature figure of merit of thin layers prepared by laser ablation from Bi2Te3 target. Appl. Phys. Lett., 2005, 87(8): 081902–1–3.

[14] Zhao D, Zuo M, Geng H. Enhanced thermoelectric performance of Ga-added Bi0.5Sb1.5Te3 films by flash evaporation. Intermetallics, 2012, 31: 321–324.

[15] Li F, Wang W. Electrodeposition of p-type BixSb2-xTey thermoelectric film from dimethyl sulfoxide solution. Electrochimi. Acta, 2010, 55(17): 5000–5005.

[16] Bourgault D, Giroud G C, Caillault N, et al. Thermoelectric properties of n-type Bi2Te2.7Se0.3 and p-type Bi0.5Sb1.5Te3 thin films deposited by direct current magnetron sputtering. Thin Solid Films, 2008, 516(23): 8579–8583.

[17] Cao H, Venkatasubramanian R, Liu C, et al. Topological insulator Bi2Te3 films synthesized by metal organic chemical vapor deposition. Appl. Phys. Lett., 2012, 101(16): 162104–1–4.

[18] Adurodija F O, Izumi H, Ishihara T, et al. Pulsed laser deposition of low-resistivity indium tin oxide thin films at low substrate temperature. Jpn. J. Appl. Phys., 1999, 38(5A): 2710–2716.

[19] Peranio N, Eibl O, Nurnus J. Structural and thermoelectric properties of epitaxially grown Bi2Te3 thin films and superlattices. J. Appl. Phys., 2006, 100(11): 114306–1–10.

[20] Luo B, Deng Y, Wang Y, et al. Fabrication and growth mechanism of zinc blende and wurtzite CdTe nanowire arrays with different photoelectric properties. Cryst. Eng. Comm., 2012, 14: 7922– 7928.

[21] Lin H J, Kang K J, Hwang J D, et al. Effect of annealing temperature on the thermoelectric properties of the Bi0.5Sb1.5Te3 thin films prepared by radio-frequency sputtering. Metallurgical and Materials Transactions A, 2013, 44(5): 2339–2345.

[22] Kim D H, Lee G H, Kim O J. Influence of post-deposition annealing on thermoelectric properties of Bi–Sb–Te films prepared by sputtering. Semicond. Sci. Technol., 2007, 22(2): 132–136.

编辑推荐 0

Metrics

阅读次数

全文

2249

HTML			PDF

最新录用	在线预览	正式出版	最新录用	在线预览	正式出版
0	0	1	0	0	2248

来源	本网站	其他网站

次数	413	1836
比例	18%	82%

摘要

1261

最新录用	在线预览	正式出版

0	0	1261

来源	本网站	其他网站

次数	88	1173
比例	7%	93%

铜对双靶共溅制备热电薄膜输运性能的影响

Influence of Cu on Transport Properties of Thermoelectric Thin Film Fabricated via Magnetron Co-sputtering Method

RichHTML

PDF (PC)

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 15

编辑推荐 0

Metrics

本文评价

[1]	赵志翰, 郭鹏, 魏菁, 崔丽, 刘山泽, 张文龙, 陈仁德, 汪爱英. Ti-DLC薄膜压阻性能及载流子输运行为研究[J]. 无机材料学报, 2024, 39(8): 879-886.
[2]	张慧, 许志鹏, 朱从潭, 郭学益, 杨英. 大面积有机-无机杂化钙钛矿薄膜及其光伏应用研究进展[J]. 无机材料学报, 2024, 39(5): 457-466.
[3]	鲍可, 李西军. 化学气相沉积法制备智能窗用热致变色VO₂薄膜的研究进展[J]. 无机材料学报, 2024, 39(3): 233-258.
[4]	杨志亮, 杨鏊, 刘鹏, 陈良贤, 安康, 魏俊俊, 刘金龙, 吴立枢, 李成明. 热管理用3英寸硅衬底金刚石薄膜的制备[J]. 无机材料学报, 2024, 39(3): 283-290.
[5]	刘松, 张发强, 罗进, 刘志甫. 0.9BaTiO₃-0.1Bi(Mg_1/2Ti_1/2)O₃铁电薄膜制备及储能特性[J]. 无机材料学报, 2024, 39(3): 291-298.
[6]	徐向明, Husam N ALSHAREEF. MXetronics—MXene电子学[J]. 无机材料学报, 2024, 39(2): 171-178.
[7]	任冠源, 李宜冠, 丁冬海, 梁瑞虹, 周志勇. CaBi₂Nb₂O₉铁电薄膜的生长取向调控和性能研究[J]. 无机材料学报, 2024, 39(11): 1228-1234.
[8]	张哲, 孙婷婷, 王连军, 江莞. 不同维度Ag₂Se构筑柔性热电薄膜的性能优化与器件集成研究[J]. 无机材料学报, 2024, 39(11): 1221-1227.
[9]	孟雨婷, 王雪梅, 章淑娴, 陈志炜, 裴艳中. Bi₂Te₃基热电材料的单带和双带传输特性转变[J]. 无机材料学报, 2024, 39(11): 1283-1291.
[10]	戴乐, 刘洋, 高轩, 王书豪, 宋雅婷, 唐明猛, 刘丽莎, 汪尧进. 浓度梯度掺杂实现BiFeO₃薄膜自极化[J]. 无机材料学报, 2024, 39(1): 99-106.
[11]	柯鑫, 谢炳卿, 王忠, 张敬国, 王建伟, 李占荣, 贺会军, 汪礼敏. 第三代半导体互连材料与低温烧结纳米铜材的研究进展[J]. 无机材料学报, 2024, 39(1): 17-31.
[12]	胡盈, 李自清, 方晓生. 溶液法制备AgBi₂I₇薄膜及其光电探测性能研究[J]. 无机材料学报, 2023, 38(9): 1055-1061.
[13]	汪波, 余健, 李存成, 聂晓蕾, 朱婉婷, 魏平, 赵文俞, 张清杰. Gd/Bi_0.5Sb_1.5Te₃热电磁梯度复合材料的服役稳定性[J]. 无机材料学报, 2023, 38(6): 663-670.
[14]	贺丹琪, 魏明旭, 刘蕤之, 汤志鑫, 翟鹏程, 赵文俞. 一步法制备重费米子YbAl₃热电材料及其性能提升[J]. 无机材料学报, 2023, 38(5): 577-582.
[15]	李彦冉, 谢叮咚, 蒋杰. 离子氧化物晶体管阵列多级痛觉敏化仿生研究[J]. 无机材料学报, 2023, 38(4): 429-436.