离子氧化物晶体管阵列多级痛觉敏化仿生研究

doi:10.15541/jim20220594

无机材料学报 ›› 2023, Vol. 38 ›› Issue (4): 429-436.DOI: 10.15541/jim20220594 CSTR: 32189.14.10.15541/jim20220594

所属专题：【信息功能】神经形态材料与器件(202409)

• 专栏：神经形态材料与器件(特邀编辑：万青) • 上一篇下一篇

离子氧化物晶体管阵列多级痛觉敏化仿生研究

李彦冉(), 谢叮咚, 蒋杰()

中南大学物理与电子学院, 纳米光子学与器件湖南省重点实验室, 长沙 410083

收稿日期:2022-10-11 修回日期:2022-11-08 出版日期:2023-04-20 网络出版日期:2023-04-18
通讯作者: 蒋杰, 副教授. E-mail: jiangjie@csu.edu.cn
作者简介:李彦冉(1996-), 女, 博士研究生. E-mail: 222201001@csu.edu.cn
基金资助:
国家自然科学基金(52172169)

Bionic Research on Multistage Pain Sensitization Based on Ionic Oxide Transistor Array

LI Yanran(), XIE Dingdong, JIANG Jie()

Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, Changsha 410083, China

Received:2022-10-11 Revised:2022-11-08 Published:2023-04-20 Online:2023-04-18
Contact: JIANG Jie, associate professor. E-mail: jiangjie@csu.edu.cn
About author:LI Yanran (1996-), female, PhD candidate. E-mail: 222201001@csu.edu.cn
Supported by:
National Natural Science Foundation of China(52172169)

摘要/Abstract

摘要：

多级痛觉感知对于生物避免外界伤害刺激具有十分重要的意义。本工作以海藻酸钠生物聚合物作为离子耦合栅介质, 成功制备了5×5无结痛觉感知晶体管阵列。该器件能够在低电压下(2 V)正常工作, 且具有较大的电流开关比(>10⁴)以及开态电流(>10 μA)。这种器件不仅能模拟突触的重要功能, 如兴奋性突触后电流、双脉冲易化、动态滤波等, 而且还成功模拟了痛觉神经网络的多级空间感知敏化特性。构建该网络系统为下一代神经形态类脑系统应用提供了新的途径。

关键词: 氧化物半导体, 晶体管阵列, 痛觉神经网络, 时空致敏

Abstract:

Multistage pain perception is of great significance for surviving the outside harmful stimuli for organisms. In this work, using a sodium alginate biopolymer electrolyte as neurotransmitter layer, a 5×5 array of junctionless transistoris successfully fabricated for pain perception. The device operates well at low voltage (2 V) with a large current on-off ratio (>10⁴) and on-state current (>10 μA). This coplanar-gate array can not only emulate the important functions of synapses, such as excitatory postsynaptic current, paired-pulse facilitation, and dynamic filtering, but also successfully mimic pain-perception and sensitization abilities of the artificial nociceptor network. Furthermore, this work also successfully emulates the multistage spatio-temporal sensitization in the nociceptor network. Construction of this kind of network system provides a new way for the application of the next-generation neuromorphic brain-like system.

Key words: oxide semiconductor, transistor array, nociceptor network, spatio-temporal sensitization

中图分类号:

TQ174

李彦冉, 谢叮咚, 蒋杰. 离子氧化物晶体管阵列多级痛觉敏化仿生研究[J]. 无机材料学报, 2023, 38(4): 429-436.

LI Yanran, XIE Dingdong, JIANG Jie. Bionic Research on Multistage Pain Sensitization Based on Ionic Oxide Transistor Array[J]. Journal of Inorganic Materials, 2023, 38(4): 429-436.

图/表 7

图1 (a)器件结构及其测试过程示意图, 单个器件的(b)转移曲线及其(c)输出曲线

Fig. 1 (a) Diagram of device structure and test process, (b) transfer curve and (c) corresponding output curve of single transistor

图2 (a)生物突触示意图, 由突触前尖峰(脉冲高度: 2.10 V, 脉冲宽度: 10 ms)触发的(b)EPSC和(c)PPF, (d)PPF指数拟合, 和(e)在不同刺激频率下(2~50 Hz)的EPSC的响应

Fig. 2 (a) Schematic image of a biological synapse, (b) EPSC and (c) PPF triggered by a presynaptic spike with amplitude at 2.10 V, duration at 10 ms, (d) PPF index fitting, and (e) EPSCs recorded in response to the different stimulus train with frequency ranging from 2 Hz to 50 Hz

图3 疼痛感知神经元表征

Fig. 3 Characteristics of the artificial painful perceptual neuron (a) Structural diagram of painful perceptual neuron; (b) EPSC response by the device applying ten electrical pulses with 10 ms pulse width and different pulse amplitudes from 1.30 V to 4.00 V,which cannot reach threshold current (Ith = 1 µA) until the pulse amplitude up to 2.64 V; (c) Fitting curve of pain threshold voltage; (d) EPSC output by the device with fixed pulse amplitude (2.10 V) and the width increasing from 10 ms to 400 ms; (e) Response of device to continuous multiple pulses with different amplitudes; (f) Fitting for response of device to continuous multiple pulses with different amplitudes (2.00, 2.20, 3.00 and 3.60 V); Colorful figures are available on website

表1 图3(f)中不同参数的拟合结果

Table 1 Fitting results of different parameters in Fig. 3(f)

Voltage/V	Y₀/μA	Q₁/μA	Q₂/μA	q₁/s	q₂/s
3.60	7.38	-2.89	-2.26	0.07	0.86
3.00	4.43	-1.79	-1.31	0.06	0.68
2.20	1.25	-0.35	-0.31	0.04	0.62
2.00	0.95	-0.22	-0.29	0.03	0.42

图4 痛觉感受器网络及其痛觉感知和敏化功能

Fig. 4 Nooceptor network and its pain perception and sensitization function (a) Schematic diagram of the junctionless transistor array used to construct the nociceptor network; (b) Transfer curves of channel C1 corresponding to 5 different grate positions; (c) Statistical results of Ion and VTH corresponding to the different gates; (d) EPSC response at different grate positions corresponding to C1 under fixed grate voltage (VGS=1.80 V); (e) EPSC response of five channels (C1-C5) corresponding to five different grid positions (G1-G5); Colorful figures are available on website

图5 4.00 V和2.20 V的脉冲序列分别加在栅极(a)G1, (b)G2, (c)G3, (d)G4, (e)G5上所得到的EPSC的响应(两个连续刺激序列的时间间隔为0.01、1.00和10.00 s); (f)敏化度Z(B2/B1)和栅极位置及脉冲序列间隔时间之间的关系;两次脉冲序列不同时间间隔((g) 0.01, (h)1.00, (i)10.00 s), 敏化度Z和阵列中栅极位置之间的关系

Fig. 5 Response of EPSC with two pulse sequence (4.00 and 2.20 V) applied in (a) G1, (b) G2, (c) G3, (d) G4, and (e) G5; (f) Relationship between sensitization Z and gate position and pulse sequence interval; (g-i) Relationship between sensitization Z(B2/B1) and gate position in the array at different time intervals ((g) 0.01s, (h) 1.00 s, (i) 10.00 s)

表2 图5(f)中不同参数的拟合结果

Table 2 Fitting results of different parameters in Fig. 5(f)

Position	Z₀/%	N₀/%	τ/s
G₁	19.08	21.90	2.02
G₂	15.60	8.53	1.32
G₃	11.28	8.20	1.55
G₄	8.72	5.08	1.60
G₅	8.00	4.03	1.13

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离子氧化物晶体管阵列多级痛觉敏化仿生研究

Bionic Research on Multistage Pain Sensitization Based on Ionic Oxide Transistor Array

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