CdSe胶质量子点的电致发光特性研究

doi:10.3724/SP.J.1077.2012.12027

无机材料学报 ›› 2012, Vol. 27 ›› Issue (11): 1211-1215.DOI: 10.3724/SP.J.1077.2012.12027 CSTR: 32189.14.SP.J.1077.2012.12027

CdSe胶质量子点的电致发光特性研究

楼腾刚¹, 胡炼¹, 吴东锴¹, 杜凌霄¹, 蔡春锋¹, 斯剑霄², 吴惠桢¹

(1. 浙江大学物理学系, 硅材料国家重点实验室, 杭州310027; 2. 浙江师范大学物理系, 金华 321004)

收稿日期:2012-01-06 修回日期:2012-03-31 出版日期:2012-11-20 网络出版日期:2012-10-25
作者简介:楼腾刚(1987–), 男, 硕士研究生. E-mail: zju_loutg@zju.edu.cn
基金资助:
国家自然科学基金(10974174, 91021020); 浙江省自然科学基金项目(Z6100117, Y1110563)

Electroluminescent Characteristics of CdSe Colloidal Quantum Dots

LOU Teng-Gang¹, HU Lian¹, WU Dong-Kai¹, DU Ling-Xiao¹, CAI Chun-Feng¹, SI Jian-Xiao², WU Hui-Zhen¹

(1. Department of Physics, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China; 2. Department of physics, Zhejiang Normal University, Jinhua 321004, China)

Received:2012-01-06 Revised:2012-03-31 Published:2012-11-20 Online:2012-10-25
About author:LOU Teng-Gang. E-mail: zju_loutg@zju.edu.cn
Supported by:
National Natural Science Foundation of China (10974174, 91021020); National Natural Science Foundation of Zhejiang province (Z6100117, Y1110563)

摘要/Abstract

摘要： 采用胶体化学法合成硒化镉(CdSe)胶质量子点, 在此基础上制成了以CdSe胶质量子点为有源层, 结构为ITO/ZnS/CdSe/ZnS/Al的电致发光(EL)器件. 透射电镜测量表明量子点的尺寸为4.3 nm, 扫描电子显微镜测量ZnS薄膜和Al薄膜结果显示表面均较为平整, 由器件结构的X射线衍射分析观察到了CdSe(111)、ZnS(111)等晶面的衍射, 表明器件中包含了CdSe量子点和ZnS绝缘层材料. 光致发光谱表征胶质量子点的室温发光峰位于614 nm, 电致发光测量得到器件在室温下的发光波长位于450 ~ 850 nm, 峰值在800 nm附近. 本文对电致发光机制及其与光致发光谱的区别进行了讨论.

关键词: CdSe, 量子点, 电致发光, 光致发光

Abstract: Electroluminescent (EL) devices with an ITO/ZnS/CdSe/ZnS/Al structure were fabricated using chemically synthesized colloidal CdSe quantum dots (QDs) as active layer. The size of the CdSe QDs is about 4.3 nm measured by a transmission electron microscope. Scanning electron microscope characterization shows smooth surfaces of ZnS layers and Al electrodes. CdSe (111) and ZnS (111) diffraction peaks are observed in the X-ray diffraction patterns, verifying the incorporation of CdSe QDs and ZnS insulator materials in the devices. Room temperature photoluminescence (PL) spectra reveal that the CdSe QDs’ emission peak is located at 614 nm. EL measurements at room temperature show a broad emission band ranging from 450 nm to 850 nm with a peak wavelength located at about 800 nm. Finally, the light emitting mechanism for the EL devices is proposed and the discrepancy between PL and EL spectra is interpreted.

Key words: CdSe, quantum dots, electroluminescence, photoluminescence

中图分类号:

O443

楼腾刚, 胡炼, 吴东锴, 杜凌霄, 蔡春锋, 斯剑霄, 吴惠桢. CdSe胶质量子点的电致发光特性研究[J]. 无机材料学报, 2012, 27(11): 1211-1215.

LOU Teng-Gang, HU Lian, WU Dong-Kai, DU Ling-Xiao, CAI Chun-Feng, SI Jian-Xiao, WU Hui-Zhen. Electroluminescent Characteristics of CdSe Colloidal Quantum Dots[J]. Journal of Inorganic Materials, 2012, 27(11): 1211-1215.

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CdSe胶质量子点的电致发光特性研究

Electroluminescent Characteristics of CdSe Colloidal Quantum Dots

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