HfO2栅介质薄膜的结构和介电性质研究

doi:10.3724/SP.J.1077.2010.00468

无机材料学报 ›› 2010, Vol. 25 ›› Issue (5): 468-472.DOI: 10.3724/SP.J.1077.2010.00468 CSTR: 32189.14.SP.J.1077.2010.00468

HfO₂栅介质薄膜的结构和介电性质研究

程学瑞¹, 戚泽明^{2, 3,} 张国斌^{2, 3}, 李亭亭^{2, 3}, 贺博^{2, 3}, 尹民¹

中国科学技术大学 1. 物理系, 合肥 230026； 2. 国家同步辐射实验室, 合肥 230029; 3. 核科学技术学院, 合肥 230029

收稿日期:2009-09-10 修回日期:2009-11-20 出版日期:2010-05-20 网络出版日期:2010-05-12

Structure and Dielectric Properties of HfO₂ Thin Films

CHENG Xue-Rui¹, QI Ze-MIng^{2, 3 ,} ZHANG Guo-Bin^{2, 3} , LI Ting-Ting^{2, 3} , HE Bo^{2, 3} , YIN Min¹

1. Department of Physics, University of Science and Technology of China, Hefei 230026, China; 2. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029， China; 3. School of Nuclear Science and Technology, University of Science and Technology of China, Hefei 230029, China

Received:2009-09-10 Revised:2009-11-20 Published:2010-05-20 Online:2010-05-12

摘要/Abstract

摘要：

采用脉冲激光沉积方法（PLD）在Si (100)衬底上生长了HfO₂栅介质薄膜. 利用X射线衍射（XRD）和扩展X射线吸收精细结构(EXAFS)对其结构进行了表征, 利用远红外光谱对其声子振动模式和介电性质进行了研究. 结果表明, 室温下制备薄膜为非晶, 衬底温度400℃时已经形成单斜相的HfO₂薄膜, 1000℃退火后薄膜更趋向于（1-11）晶面取向, 且结晶质量改善. 薄膜的局域结构研究显示低衬底温度下生长的样品具有更短的Hf--O键长和更高的无序度. 薄膜结构和薄膜质量影响其远红外声子模式, 使得一些低频红外声子模式消失, 造成其介电常数相对体材料有所降低, 但由于影响介电常数的主要远红外声子模式依然存在, 晶态薄膜仍然能保持一定的介电常数值.

关键词: HfO₂薄膜, 高介电常数栅介质, 脉冲激光沉积, 声子

Abstract:

HfO₂ dielectric thin films were deposited on Si(100) substrate by pulsed laser deposition (PLD) method. The structure of films was characterized by X-ray diffraction (XRD) and extended X-ray absorption fine structure spectroscope (EXAFS). The phonons modes and dielectric properties were investigated by far infrared spectroscope. These results show that the thin films deposited at room temperature and 400℃ are amorphous and monoclinic phase, respectively. The crystallization quality of the film is improved after annealing at 1000℃. The HfO₂thin film has shorter Hf--O bonding length and higher disorder than those of HfO₂ powder. Some far infrared phonon modes disappear due to the higher disorder and worse crystalline quality of thin film, which causes the dielectric constant of thin film smaller than that of powder sample. However, main infrared phonon modes are preserved and the crystallized thin film still has enough value of dielectric

Key words: HfO₂ films, high dielectric gate, pulsed laser deposition, phonon

中图分类号:

O484

程学瑞1, 戚泽明2, 3, 张国斌2, 3, 李亭亭2, 3, 贺博2, 3, 尹民1. HfO₂栅介质薄膜的结构和介电性质研究[J]. 无机材料学报, 2010, 25(5): 468-472.

CHENG Xue-Rui-1, QI Ze-Ming-2, 3 , ZHANG Guo-Bin-2, 3 , LI Ting-Ting-2, 3 , HE Bo-2, 3 , YIN Min-1. Structure and Dielectric Properties of HfO₂ Thin Films[J]. Journal of Inorganic Materials, 2010, 25(5): 468-472.

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HfO₂栅介质薄膜的结构和介电性质研究

Structure and Dielectric Properties of HfO₂ Thin Films

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