无机材料学报 ›› 2011, Vol. 26 ›› Issue (3): 281-285.DOI: 10.3724/SP.J.1077.2011.00281

• 研究论文 • 上一篇    下一篇

沉积激光能量对 CuAlO2 薄膜光学性质的影响

邓赞红 1,2 , 方晓东1,2, 陶汝华1,2, 董伟伟1,2, 周 曙1,2, 孟 钢1,2, 邵景珍1,2   

  1. 1. 中国科学院安徽光学精密机械研究所安徽光子器件与材料省级实验室, 合肥230031; 2. 中国科学院新型薄膜太阳电池重点实验室, 合肥230031
  • 收稿日期:2010-06-05 修回日期:2010-07-17 出版日期:2011-03-20 网络出版日期:2011-02-18
  • 作者简介:邓赞红(1981-), 女, 博士, 助理研究员.
  • 基金资助:

    安徽省自然科学基金(090414169); 中国科学院合肥物质科学研究院知识创新工程青年人才领域前沿项目

Effect of Deposition LaserEnergy on the Optical Properties of CuAlO2 Films

DENG Zan-Hong1,2 , FANG Xiao-Dong1,2 , TAO Ru-Hua1,2 , DONG Wei-Wei1,2 , ZHOU Shu1,2 , MENG Gang1,2 , SHAO Jing-Zhen1,2   

  1. 1. Anhui Provincial Key Lab of Photonics Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China; 2. Key Lab of New Thin Film Solar Cells, Chinese Academy of Sciences, Hefei 230031, China
  • Received:2010-06-05 Revised:2010-07-17 Published:2011-03-20 Online:2011-02-18
  • Supported by:

    Natural Science Foundation of Anhui Province(090414169); The KnowledgeInnovation Program of the Chinese Academy of Sciences

摘要: 采用脉冲激光沉积法制备了CuAlO2薄膜. 在沉积激光能量100~180mJ范围内原位沉积的薄膜并在N2气氛下900℃异位退火1h处理后, 所有薄膜均为高度 c 轴取向的单相CuAlO2薄膜, 晶粒尺寸~49nm. 随着沉积激光能量的增大, 薄膜厚度增加, 表面颗粒尺寸明显增大, 在可见光区的平均透射率下降. 室温光致发光谱发现, CuAlO2薄膜在350nm附近有一个自由激子复合发光峰, 说明在CuAlO2宽带隙半导体中存在直接带间跃迁, 这对于该材料在光电子领域如发光二极管的应用具有重要意义.

关键词: 脉冲激光沉积, CuAlO2薄膜, 光学带隙, 室温光致发光谱

Abstract: CuAlO2 films were prepared by pulsed laser deposition (PLD) on Al2O3(001).And the effect of deposition laser energy on the microstructure, morphologies and optical properties of the films were studied. The in-situ deposited films were amorphous in the deposition laser energyof 100-180mJ. After ex-situ annealed in N2 atmosphere at 900℃ for 1 h, all the films were single phase CuAlO2with c-axis orientation and the crystal sizes were about 49nm. With the increase of deposition laser energy,the film thickness and surface particle sizes increased, while the visiblelight transmittance decreased. Room-temperature photoluminescence measurements of the CuAlO2 films deposited with laser energy of 100mJ and 180mJ only showed an ultraviolet near-band-edge emission peak at 350 nm (around 3.5eV) in the range of 325-650 nm, which originated from the generation and recombination of electron-hole pairs, namely, excitons. This observation indicates the existence of direct transition-type band gap of thismaterial, which is favorable for the optoelectronics applications such aslight-emitting diodes (LEDs).

Key words: pulsed laser deposition, CuAlO2 films, optical band energy, room-temperature photolumine scence spectra

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