快速退火对 Ni-Al-O 栅介质结构和介电性能的影响

doi:10.3724/SP.J.1077.2011.00257

无机材料学报 ›› 2011, Vol. 26 ›› Issue (3): 257-260.DOI: 10.3724/SP.J.1077.2011.00257

快速退火对 Ni-Al-O 栅介质结构和介电性能的影响

李曼¹, 刘保亭¹, 王玉强², 王宽冒¹

1.河北大学1.物理科学与技术学院,保定071002; 2.河北大学 2. 电子信息工程学院, 保定071002

收稿日期:2010-05-11 修回日期:2010-07-08 出版日期:2011-03-20 网络出版日期:2011-02-18
作者简介:李曼(1986-), 女，河北人 , 硕士研究生.
基金资助:
国家自然科学基金(60876055, 11074063);河北省自然科学基金项目 (E2008000620, E2009000207); 高等学校博士点基金(20091301110002); 河北省应用基础研究计划重点基础研究项目(10963525D)

Effect of RapidThermal Annealing on Structural And and Electrical characteristics Characteristics of Ni-Al-O gate Gate dielectrics Dielectrics

LI Man¹, LIU Bao-ting¹,WANG Yu-qiang²,WANG Kuan-mao¹

1. College of Physics Science and Technology, Hebei University,Baoding 071002, China; 2. College of Electronic and Information Engineering,Hebei University, Baoding 071002, China

Received:2010-05-11 Revised:2010-07-08 Published:2011-03-20 Online:2011-02-18
Supported by:
National Nature Science Foundation of China (60876055 ,11074063) ; Nature Science Foundation of Hebei Province (E2008000620,E2009000207) ;Specialized Research Fund for the Doctoral Program of Higher Education (20091301110002) ; The Key Basic Research Program of Hebei Province Applied Basic Research Plan (10963525D)

摘要/Abstract

摘要： 采用反应脉冲激光沉积方法(PLD)分别在n-Si(100)和Pt/Ti/SiO₂/Si(111)衬底上生长了Ni-Al-O栅介质薄膜,将样品在不同温度下进行快速退火处理. 通过XRD和AFM对其结构和表面形貌进行了表征,利用LCR表和Keithley表对其介电性能和漏电流进行了研究.结果表明, 样品经过750 ℃退火后仍然保持非晶状态,且样品的表面平整, 均方根粗糙度小于0.5nm. 在1 MHz测试频率下, 由Pt/Ni-Al-O/Pt电容器测得的介电常数为9.9.MOS电容器的电学测试显示, 700 ^oC ℃以上退火的样品有较高的电容值,较低的漏电流密度. 研究表明,Ni-Al-O薄膜将会是一种很有潜力的新型高k栅介质材料.

关键词: 高k栅介质, Ni-Al-O薄膜, 反应脉冲激光沉积

Abstract: The high-k Ni-Al-O gatedielectric films , were depositedon Si (100) and platinized Si (111) substrates by reactive pulsed-laserdeposition (PLD) at 400 ^oC ℃, were and the nannealed in a rapid thermal annealing furnace at various temperatures rangingfrom 600 ℃ ^oC to 750 ℃ ^oC. The structural and electrical properties of the Ni-Al-O films were investigated. It is found that Ni-Al-O thin film annealed up to 750 ℃ ^oC is amorphous and the root-mean-square roughness of the film is less than 0.5 nm, indicating the file surface isvery smooth. The dielectric constant of the film measured at the frequency of 1 MHz is determined to be 9.9 at the frequency of 1 MHz measured with Pt/Ni-Al-O/Pt structure. The capacitance and leakage current density of the film, annealed at above 700 ℃ ^oC are 135 pF and 7.0×10^-⁷A /cm^-2,respectively. The obtained results indicate that the amorphous Ni-Al-O film is a promising candidate for high-k gate dielectric.

Key words: high-k gate dielectric, Ni-Al-O thin film, reactive pulsed laser deposition

中图分类号:

O484

李曼, 刘保亭, 王玉强, 王宽冒. 快速退火对 Ni-Al-O 栅介质结构和介电性能的影响[J]. 无机材料学报, 2011, 26(3): 257-260.

LI Man, LIU Bao-ting,WANG Yu-qiang,WANG Kuan-mao. Effect of RapidThermal Annealing on Structural And and Electrical characteristics Characteristics of Ni-Al-O gate Gate dielectrics Dielectrics[J]. Journal of Inorganic Materials, 2011, 26(3): 257-260.

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快速退火对 Ni-Al-O 栅介质结构和介电性能的影响

Effect of RapidThermal Annealing on Structural And and Electrical characteristics Characteristics of Ni-Al-O gate Gate dielectrics Dielectrics

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