无机材料学报 ›› 2012, Vol. 27 ›› Issue (3): 291-295.DOI: 10.3724/SP.J.1077.2012.00291 CSTR: 32189.14.SP.J.1077.2012.00291

• 研究论文 • 上一篇    下一篇

多铁性BaTiO3/La2/3Sr1/3MnO3复合薄膜的制备及其强磁电效应的研究

李廷先1, 张 铭1, 胡 州1, 李扩社2, 于敦波2, 严 辉1   

  1. (1. 北京工业大学 材料科学与工程学院, 北京100124; 2. 北京有色金属研究总院 稀土材料国家工程研究中心, 北京100088)
  • 收稿日期:2011-03-15 修回日期:2011-05-01 出版日期:2012-03-20 网络出版日期:2012-02-16
  • 作者简介:李廷先(1976-), 男, 博士研究生. E-mail: wxlltx@126.com
  • 基金资助:

    国家自然科学基金(51002013, 1174021); 北京市自然科学基金(2122007)

Preparation and Strong Magnetoelectric Effect of Multiferroic BaTiO3/La2/3Sr1/3MnO3 Composite Film

LI Ting-Xian1, ZHANG Ming1, HU Zhou1, LI Kuo-She2, YU Dun-Bo2, YAN Hui1   

  1. (1. College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China; 2. National Engineering Research Central for Rare Earth Materials, General Research Institute for Nonferrous Metals, Beijing 100088, China)
  • Received:2011-03-15 Revised:2011-05-01 Published:2012-03-20 Online:2012-02-16
  • About author:LI Ting-Xian. E-mail: wxlltx@126.com
  • Supported by:

    National Natural Science Foundation of China(51002013, 1174021); Natural Science Foundation of Beijing Municipality (2122007)

摘要: 使用脉冲激光沉积技术, 在(001)取向的LaAlO3(LAO)单晶基片上外延生长了BaTiO3/La2/3Sr1/3MnO3 (BTO/LSMO)双层复合薄膜. 电学和磁学性能的研究显示复合薄膜具有较低的相对介电常数(εr=263), 优良的铁电和铁磁性能以及高于室温的铁磁居里温度(Tc=317 K). 复合薄膜的磁电电压系数(αE)为176 mV/A, 高于同类结构磁电系统一个数量级, 相应的界面耦合系数k值为0.68, 表明铁磁层和铁电层界面之间存在较大程度的耦合.

关键词: 磁电效应, 铁电/铁磁复合薄膜, 脉冲激光沉积, 界面耦合系数

Abstract: Using pulsed laser deposition technique, the multiferroic BaTiO3/La2/3Sr1/3MnO3 composite bilayer films were epitaxially prepared on (001) oriented LaAlO3 single crystal substrate. The measurements of electric and magnetic properties showed that the composite structure possessed superior ferromagnetic and ferroelectric properties, its relative dielectric constant and ferromagnetic curie temperature were 263 and 317 K, respectively. The magnetoelectric voltage coefficient for the bilayer films at room temperature was around 176 mV/A, which was at least one order of magnitude higher than the previous reported in the same structures. The corresponding interface coupling parameter k was about 0.68, which indicated a better interface coupling between ferromagnetic and ferroelectric layers.

Key words: magnetoelectric effect, ferroelectric/ferromagnetic bilayer heterostructure, pulsed laser deposition, interface coupling parameter

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