基于CuI/Si单边异质结的微光高灵敏双波段可切换光电探测器

doi:10.15541/jim20240094

无机材料学报 ›› 2024, Vol. 39 ›› Issue (9): 1063-1069.DOI: 10.15541/jim20240094 CSTR: 32189.14.10.15541/jim20240094

所属专题：【信息功能】敏感陶瓷（202409）

基于CuI/Si单边异质结的微光高灵敏双波段可切换光电探测器

杨佳霖¹(), 王亮君¹, 阮丝园¹, 蒋秀林²^,³, 杨长¹()

1.华东师范大学电子系, 极化材料与器件教育部重点实验室, 上海类脑智能材料与器件研究中心, 上海 200241
2.江苏大学智能柔性机械电子研究院, 镇江 212013
3.晶澳太阳能有限公司电池研发中心, 扬州 225000

收稿日期:2024-03-01 修回日期:2024-04-09 出版日期:2024-09-20 网络出版日期:2024-04-19
通讯作者: 杨长, 研究员. E-mail: cyang@phy.ecnu.edu.cn
作者简介:杨佳霖(1998-), 女, 硕士研究生. E-mail: 51214700087@stu.ecnu.edu.cn

Highly Weak-light Sensitive and Dual-band Switchable Photodetector Based on CuI/Si Unilateral Heterojunction

YANG Jialin¹(), WANG Liangjun¹, RUAN Siyuan¹, JIANG Xiulin²^,³, YANG Chang¹()

1. Key Laboratory of Polar Materials and Devices (MOE), Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai 200241, China
2. Institute of Intelligent Flexible Mechatronics, Jiangsu University, Zhenjiang 212013, China
3. Cell R&D Center, JA Solar Holdings Co., Ltd, Yangzhou 225000, China

Received:2024-03-01 Revised:2024-04-09 Published:2024-09-20 Online:2024-04-19
Contact: YANG Chang, professor. E-mail: cyang@phy.ecnu.edu.cn
About author:YANG Jialin (1998-), female, Master candidate. E-mail: 51214700087@stu.ecnu.edu.cn
Supported by:
National Natural Science Foundation of China(62074056);Fundamental Research Funds for the Central Universities

摘要/Abstract

摘要：

近年来, 碘化铜(CuI)因其较高的本征霍尔迁移率、高光吸收和较大的激子结合能而成为一种新兴的p型宽带隙半导体。然而, 在传统半导体材料表面制备高质量CuI薄膜非常困难, 已有CuI基异质结器件的光谱响应和光电转换效率较低。本研究采用一种简易的金属碘化法制备了一种p-CuI/n-Si结构的光电二极管。虽然获得的CuI是带有明显结构缺陷的多晶薄膜, 但CuI/Si二极管具有很高的弱光灵敏度。其高达7.6×10⁴的整流比表明该光电二极管具有良好的缺陷容忍度, 这与p⁺n型二极管的单边异质结这一特殊结构有关。本研究对该p⁺n型二极管的光电响应进行了较为系统的研究, 选择波长分别为400、505、635和780 nm的不同单色激光器进行光响应测试。在零偏置电压条件下, 该器件为单边异质结, 耗尽层仅在硅一侧, 因此只有可见光被吸收。当施加-3 V的偏置电压时, 光电二极管被切换到“紫外-可见”双波段响应的工作模式。因此, 通过调整偏置电压可以使检测波长在“可见”波段和“紫外-可见”波段之间切换。此外, 本研究所得到的CuI/Si二极管对弱光照非常敏感。在入射光功率密度低至0.5 μW/cm²时, 其具有高达10¹³~10¹⁴ Jones的探测率, 明显优于其他铜基光电二极管。相关研究结果证实了CuI在与传统硅工业集成时的高应用潜力。

关键词: 碘化铜, 异质结, 光电探测器

Abstract:

In recent years, copper iodide (CuI) is an emerging p-type wide bandgap semiconductor with high intrinsic Hall mobility, high optical absorption and large exciton binding energy. However, the spectral response and the photoelectric conversion efficiency are limited for CuI-based heterostructure devices, which is related to the difficulty in fabrication of high-quality CuI thin films on other semiconductors. In this study, a p-CuI/n-Si photodiode has been fabricated through a facile solid-phase iodination method. Although the CuI thin film is polycrystalline with obvious structural defects, the CuI/Si diode shows a high weak-light sensitivity and a high rectification ratio of 7.6×10⁴, indicating a good defect tolerance. This is because of the unilateral heterojunction behavior of the formation of the p⁺n diode. In this work, the mechanism of photocurrent of the p⁺n diode has been studied comprehensively. Different monochromatic lasers with wavelengths of 400, 505, 635 and 780 nm have been selected for testing the photoresponse. Under zero-bias voltage, the device is a unilateral heterojunction, and only visible light can be absorbed at the Si side. On the other hand, when a bias voltage of -3 V is applied, the photodiode is switched to a broader “UV-visible” band response mode. Therefore, the detection wavelength range can be switched between the “Visible” and “UV-visible” bands by adjusting the bias voltage. Moreover, the obtained CuI/Si diode was very sensitive to weak light illumination. A very high detectivity of 10¹³-10¹⁴ Jones can be achieved with a power density as low as 0.5 μW/cm², which is significantly higher than that of other Cu-based diodes. These findings underscore the high application potential of CuI when integrated with the traditional Si industry.

Key words: copper iodide, heterojunction, photodetector

中图分类号:

TQ174

杨佳霖, 王亮君, 阮丝园, 蒋秀林, 杨长. 基于CuI/Si单边异质结的微光高灵敏双波段可切换光电探测器[J]. 无机材料学报, 2024, 39(9): 1063-1069.

YANG Jialin, WANG Liangjun, RUAN Siyuan, JIANG Xiulin, YANG Chang. Highly Weak-light Sensitive and Dual-band Switchable Photodetector Based on CuI/Si Unilateral Heterojunction[J]. Journal of Inorganic Materials, 2024, 39(9): 1063-1069.

图/表 7

Fig. 1 Fabrication and testing schematic diagram (a) Schematic structure of the fabricated p+n type CuI/Si heterojunction diode; (b) Schematic diagram of the photodiode test

Fig. 2 Structural and electrical characterization of the obtained CuI thin film (a) XRD pattern; (b) PL spectrum; (c) Optical transmittance; (d) SEM image

Fig. 3 I-V characteristic curve of the CuI/Si heterojunction

Fig. 4 I-V characteristic curves of the CuI/Si photodiode under different laser light wavelengths with a light power density of 50 μW/cm2 Dark current is plotted in dashed line; Colorful figure is available on website

Fig. 5 Responsivity of the CuI/Si photodiode as a function of light power density and responsivity under specific light intensity (a) 0 V bias applied; (b) -3 V bias applied; (c) 0 V bias applied under specific light intensity; (d) -3 V bias applied under specific light intensity

Table 1 Device parameters of the CuI/Si photodiodes

Wavelength/nm	Bias voltage/V	Responsivity (Weak/strong light)/(A·W^-1)	D* (Weak/strong light)/ (×10¹³, Jones)	EQE (Weak/strong light)/%
400	0	0.08/0.06	0.363/0.241	26/17
400	-3	3.58/0.15	15.4/0.669	1109/48
505	0	0.31/0.14	1.35/0.618	77/35
505	-3	3.46/0.30	14.9/1.31	849/74
635	0	0.65/0.13	2.82/0.561	127/25
635	-3	4.00/0.90	17.3/3.88	782/175
780	0	1.15/0.20	4.94/0.844	182/31
780	-3	4.70/0.67	20.3/2.92	747/107

Table 2 Summarization of photoelectric properties in Si-based photodiodes

Diode structure	Wavelength/ nm	Power density/ (μW·cm⁻²)	Bias voltage/V	D*/Jones	Responsivity/ (A·W^-1)	EQE/%	Ref.
SnSe/Si	405	10	-4	3.4×10¹¹	0.21	-	[36]
	405	300	-4	3.0×10¹¹	0.18	-
	650	10	0	1.1×10¹¹	0.20	-
	650	300	0	1.0×10¹¹	0.17	-
MoS₂/Si	514	3	-2	2.2×10¹¹	1.25	-	[37]
MoS₂/Si	514	80	-2	8.0×10¹¹	0.90	-	[37]
Graphene-Si	730	10	-2	2.1×10⁸	0.35	-	[38]
Si/ZnO	550	-	-2	-	0.37	-	[39]
ZnTe-TeO₂/Si	350	-	0	4.0×10¹²	0.03	-	[43]
ZnTe-TeO₂/Si	850	-	0	1.4×10¹³	0.08	-	[43]
CuI/Si	400	0.5	-3	1.54×10¹⁴	3.58	1109	This work
	400	50	-3	6.69×10¹²	0.15	48
	780	0.5	0	4.94×10¹³	1.15	182
	780	50	0	8.44×10¹²	0.20	31

参考文献 43

[1]	YU X, MARKS T, FACCHETTI A. Metal oxides for optoelectronic applications. Nature Materials, 2016, 15: 383. DOI PMID
[2]	WOODS-ROBINSON R, HAN Y B, ZHANG H Y, et al. Wide band gap chalcogenide semiconductors. Chemical Reviews, 2020, 120(9): 4007.
[3]	ZHANG C, NICOLOSI V. Graphene and MXene-based transparent conductive electrodes and supercapacitors. Energy Storage Materials, 2019, 16: 102.
[4]	FANG H, ZHAO Z, WU W, et al. Progress in flexible electrochromic devices. Journal of Inorganic Materials, 2021, 36(2): 140. DOI
[5]	LIU H, LI H, TAO J, et al. Single crystalline transparent conducting F, Al, and Ga Co-doped ZnO thin films with high photoelectrical performance. ACS Applied Materials & Interfaces, 2023, 15(18): 22195.
[6]	YUTAKA F, TARO H, YUKIO Y, et al. A transparent metal: Nb-doped anatase TiO₂. Applied Physics Letters, 2005, 86(25): 252101.
[7]	WILLIS J, SCANLON D. Latest directions in p-type transparent conductor design. Journal of Materials Chemistry C, 2021, 9: 11995.
[8]	YANG C, KNEISS M, SCHEIN F L, et al. Room-temperature domain-epitaxy of copper iodide thin films for transparent CuI/ZnO heterojunctions with high rectification ratios larger than 109. Scientific Reports, 2016, 6: 21937.
[9]	LI Z, HE J, LV X, et al. Optoelectronic properties and ultrafast carrier dynamics of copper iodide thin films. Nature Communications, 2022, 13: 6346. DOI PMID
[10]	YANG C, MAX K, MICHAEL L, et al. Room-temperature synthesized copper iodide thin film as degenerate p-type transparent conductor with a boosted figure of merit. Applied Physical Sciences, 2016, 113(46): 12929.
[11]	MARIUS G, FRIEDRICH S, MICHAEL L, et al. Cuprous iodide-a p-type transparent semiconductor: history and novel applications. Physica Status Solidi A, 2013, 210(9): 1671.
[12]	TANAKA T, KEISHI K, MASATAKA H. Transparent, conductive CuI films prepared by rf-dc coupled magnetron sputtering. Thin Solid Films, 1996, 281: 179.
[13]	KIM D, NAKAYAM M, KOJIM O, et al. Thermal-strain-induced splitting of heavy and light-hole exciton energies in CuI thin films grown by vacuum evaporation. Physical Review B, 1999, 60(19): 13879.
[14]	ZI M, LI J, ZHANG Z, et al. Effect of deposition temperature on transparent conductive properties of γ-CuI film prepared by vacuum thermal evaporation. Phys. Status Solidi, 2015, 212: 1466.
[15]	KANG H, LIU R, CHEN K, et al. Electrodeposition and optical properties of highly oriented γ-CuI thin films. Electrochim Acta, 2010, 55(27): 8121.
[16]	YAMADA N, KONDO Y, INO R. Low-temperature fabrication and performance of polycrystalline CuI films as transparent p-type semiconductors. Physica Status Solidi, 2019, 216(5): 1700782.
[17]	STORM P, BAR M, BENNDORF G, et al. High mobility, highly transparent, smooth, p-type CuI thin films grown by pulsed laser deposition. APL Materials, 2020, 8(9): 091115.
[18]	YANG C, ROSE E, YU W, et al. Controllable growth of copper iodide for high-mobility thin films and self-assembled microcrystals. ACS Applied Electronic Materials, 2020, 2(11): 3627.
[19]	GENG F, WU Y, SPLITH D, et al. Amorphous transparent Cu(S,I) thin films with very high hole conductivity. Journal of Physical Chemistry Letters, 2023, 14(26): 6163.
[20]	GENG F, WANG L, STRALKA T, et al. (111)-oriented growth and acceptor doping of transparent conductive CuI:S thin films by spin coating and radio frequency-sputtering. Advanced Engineering Materials, 2023, 25(11): 2201666.
[21]	YANG C, SOUCHAY D, KNEISS M, et al. Transparent flexible thermoelectric material based on non-toxic earth-abundant p-type copper iodide thin film. Nature Communications, 2017, 8: 16076. DOI PMID
[22]	CHA J, JUNG D. Air-stable transparent silver iodide-copper iodide heterojunction diode. ACS Applied Materials Interfaces, 2017, 9(50): 43807.
[23]	NAOOMI Y, YUUMI K, XIANG C, et al. Visible-blind wide-dynamic-range fast-response self-powered ultraviolet photodetector based on CuI/In-Ga-Zn-O heterojunction. Applied Materials Today, 2019, 15: 153.
[24]	AKSHAI S, NANDAKUMAR A, RAMESH R, et al. Self-powered UV photodetectors based on heterojunctions composed of ZnO nanorods coated with thin films of ZnS and CuI. ACS Applied Nano Materials, 2023, 6(10): 8529.
[25]	ZHANG Y, LI S, YANG W, et al. Millimeter-sized single-crystal CsPbrB₃/CuI heterojunction for high-performance self-powered photodetector. Journal of Physical Chemistry Letters, 2019, 10(10): 2400.
[26]	WANG Y, CHUANG C. Solution processed CuI/n-Si junction device annealed with and without iodine steam for ultraviolet photodetector applications. Journal of Materials Science, 2018, 29(21): 18622.
[27]	LI W, SHI W. Growth habit and habit variation of γ-CuI crystallites under hydrothermal conditions. Crystal Research & Technology, 2002, 37(10): 1041.
[28]	ALIVOV Y, ÖZGÜR Ü, DOĞAN S, et al. Photoresponse of n-ZnO/p-SiC heterojunction diodes grown by plasma-assisted molecular-beam epitaxy. Applied Physics Letters, 2005, 86(24): 241108.
[29]	LEE M, SEO S, KIM D, et al. A low-temperature grown oxide diode as a new switch element for high-density, nonvolatile memories. Advanced Materials, 2007, 19(1): 73.
[30]	BRÖTZMANN M, VETTER U, HOFSÄSS H. BN/ZnO heterojunction diodes with apparently giant ideality factors. Journal of Applied Physics, 2009, 106(6): 063704.
[31]	SCHENK A, KRUMBEIN U. Coupled defect level recombination: theory and application to anomalous diode characteristics. Journal of Applied Physics, 1995, 78(5): 3185.
[32]	YASUHISA O, YOSHIAKI M, SHINGO S, et al. Revisiting the role of trap-assisted-tunneling process on current-voltage characteristics in tunnel field-effect transistors. Journal of Applied Physics, 2018, 123(16): 161549.
[33]	TALIN A, ALEC, LEONARD F, SWART B, et al. Unusually strong space-charge-limited current in thin wires. Physical Review Letters, 2008, 101: 076802.
[34]	YU W, BENNDORF G, JIANG Y, et al. Control of optical absorption and emission of sputtered copper iodide thin films. Physica Status Solidi (RRL)-Rapid Research Letters, 2020, 15(1): 2000431.
[35]	YANG Y, SHAO Y, LI B, et al. Enhanced band-edge luminescence of CuI thin film by Cl-doping. Journal of Inorganic Materials, 2023, 38(6): 687. DOI
[36]	LUO F, ZHOU H, LIU Y, et al. High-performance self-driven SnSe/Si heterojunction photovoltaic photodetector. Chemosensors, 2023, 11: 406.
[37]	MUKHERJEE S, MAITI R, KATIYAR A, et al. Novel colloidal MoS₂ quantum dot heterojunctions on silicon platforms for multifunctional optoelectronic devices. Scientific Reports, 2016, 6: 29016.
[38]	AN X, LIU F, JUNG Y, et al. Tunable graphenesilicon heterojunctions for ultrasensitive photodetection. Nano Letters, 2013, 13(3): 909.
[39]	LIM S, UM D, HA M, et al. Broadband omnidirectional light detection in flexible and hierarchical ZnO/Si heterojunction photodiodes. Nano Research, 2017, 10: 22.
[40]	SAHATIYA P, REDDY C, BADHULIKA S. Discretely distributed 1D V₂O₅ nanowires over 2D MoS₂ nanoflakes for an enhanced broadband flexible photodetector covering the ultraviolet to near infrared region. Journal of Materials Chemistry C, 2017, 5(48): 12728.
[41]	YIN W, YANG J, ZHAO K, et al. High responsivity and external quantum efficiency photodetectors based on solution-processed Ni-doped CuO films. ACS Applied Materials & Interfaces, 2020, 12(10): 11797.
[42]	HONG Q, CAO Y, HU J, et al. Self-powered ultrafast broadband photodetector based on p-n heterojunctions of CuO/Si nanowire array. ACS Applied Materials & Interfaces, 2014, 6(23): 20887.
[43]	SONG Z, LIU Y, WANG Q, et al. Self-powered photodetectors based on a ZnTe-TeO₂ composite/Si heterojunction with ultra- broadband and high responsivity. Journal of Materials Science, 2018, 53: 7562.

基于CuI/Si单边异质结的微光高灵敏双波段可切换光电探测器

Highly Weak-light Sensitive and Dual-band Switchable Photodetector Based on CuI/Si Unilateral Heterojunction

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