无机材料学报 ›› 2016, Vol. 31 ›› Issue (10): 1147-1150.DOI: 10.15541/jim20160061 CSTR: 32189.14.10.15541/jim20160061

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大尺寸硅酸铋晶体的原料合成、晶体生长及闪烁性能研究

徐家跃1, 王 杰1, 陈 炜1, 肖学峰1,2, 杨波波1, 王占勇1, 李 飞3, 谢会东3   

  1. (1. 上海应用技术大学 材料科学与工程学院, 上海201418; 2. 北方民族大学 物理系, 银川 750021; 3. 西安建筑科技大学 理学院, 西安710055)
  • 收稿日期:2016-01-27 出版日期:2016-10-20 网络出版日期:2016-09-23

Synthesis, Growth and Scintillation Properties of Large Size Bi4Si3O12 Crystals

XU Jia-Yue1, WANG Jie1, CHEN Wei1, XIAO Xue-Feng1, 2, YANG Bo-Bo1, WANG Zhan-Yong1, LI Fei3, XIE Hui-Dong3   

  1. (1. Institute of Crystal Growth, School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418, China; 2. Department of Fundamental Science, Beifang University of Nationalities, Yinchuan 750021, China; 3. School of Science, Xi’an University of Architecture and Technology, Xi’an 710055, China)
  • Received:2016-01-27 Published:2016-10-20 Online:2016-09-23
  • Supported by:
    National Natural Science Foundation of China (51342007, 51572175)

摘要:

以Si(OC2H5)4和Bi(NO3)3·5H2O作为前驱体、柠檬酸作为溶剂, 按化学计量比配料, 采用溶胶-凝胶法合成并经高温烧结制备了纯相Bi4Si3O12多晶粉末, 每批次可合成250 g。以此为原料、<001 >取向BSO为籽晶, 在坩埚下降炉内生长了BSO晶体, 讨论了晶体的析晶行为, 获得了30 mm × 30 mm × 210 mm的高质量BSO晶体。闪烁性能测试表明, 该晶体能量分辨率为18.9%, 光输出为同等条件下CSI(T1)晶体的7.2%。

关键词: 溶胶-凝胶法, 硅酸铋晶体, 坩埚下降法, 晶体生长, 闪烁性能

Abstract:

Using stoichiometric Si(OC2H5)4 and Bi(NO3)3·5H2O as precursors and citric acid as solvent, polycrystalline Bi4Si3O12 (BSO) powders were synthesized by Sol-Gel method and sintered at high temperature. Batch production of 250 g powders was realized. Using as-synthesized BSO powders and <001>-oriented BSO seeds, BSO crystals were grown in the vertical Bridgman furnace. The crystallization behavior was discussed and high quality BSO crystal up to 30 mm × 30 mm × 210 mm was obtained. The scintillation characteristics of BSO single crystals were investigated. The energy resolution of the BSO crystal was 18.9% and the relative light yield of the crystal was 7.2% compared with CsI(Tl) at the same conditions.

Key words: Sol-Gel method, Bi4Si3O12 crystal, vertical Bridgman method, crystal growth, scintillation property

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