低温烧结陶瓷BiMg2VO6的微波介电性能

doi:10.15541/jim20140298

摘要/Abstract

摘要：

通过传统的固相反应方法制备了低温烧结微波介质陶瓷BiMg₂VO₆, 研究了该陶瓷与银的化学兼容性、物相、形貌及在720~840℃内的密度和微波介电性质, 并测试了陶瓷的红外反射光谱。结果表明: 陶瓷在780℃条件下与银共烧不发生反应, 相对密度大于93.8%。在780℃条件下烧结2 h得到的陶瓷具有最好的微波介电性能: 介电常数为13.4, Q×f值为15610 GHz (f = 8.775 GHz), 温度系数为-87.2×10^-6/℃。红外反射谱数据处理显示, BiMg₂VO₆的光频介电常数ε_∞ = 3.4, 微波频段的外推值为13.5。BiMg₂VO₆陶瓷好的微波介电性能和低的烧结温度, 使其有望用作新的低温共烧陶瓷。

关键词: BiMg2VO6, 微波介电, 烧结性, 陶瓷

Abstract:

A low firing microwave dielectric ceramic BiMg₂VO₆ was prepared via conventional solid state reaction method. The chemical compatibility, phase, morphology, density and microwave dielectric properties of the ceramic in the sintering temperature range of 720~840℃ were studied. The infrared reflectivity spectra of the ceramic were measured. Results showed that the BiMg₂VO₆ ceramics did not react with Ag at 780℃ and the relative densities of the samples were greater than 93.8% at every sintering temperature conditions. Ceramic sintered at 780℃ for 2 h showed the optimum microwave dielectric properties with permittivity of 13.34, Q×f value of 15610 GHz (f= 8.775 GHz) and temperature coefficient value of -87.2×10^-6/℃. The optical frequency permittivity was 3.4 and the extrapolated value to microwave frequency was 13.5. The optimum microwave dielectric properties and low sintering temperature of BiMg₂VO₆ ceramic enable it a promising candidate for low temperature co-fired ceramic applications.

Key words: BiMg2VO6, microwave dielectric properties, sintering behavior

中图分类号:

TQ174

谢会东, 席海红, 李飞, 陈超. 低温烧结陶瓷BiMg₂VO₆的微波介电性能[J]. 无机材料学报, 2015, 30(2): 202-206.

XIE Hui-Dong, XI Hai-Hong, LI Fei, CHEN Chao. Microwave Dielectric Properties of BiMg₂VO₆ Ceramic with Low Sintering Temperature[J]. Journal of Inorganic Materials, 2015, 30(2): 202-206.

图/表 5

图1 BiMg2VO6陶瓷以及共烧陶瓷的XRD图谱

Fig. 1 X-ray diffraction patterns of BiMg2VO6 ceramic and co-fired ceramic

图2 不同温度烧结2 h所得BiMg2VO6陶瓷表面的二次电子照片(a~e)和背散射电子照片(f)及其EDS分析结果(g,h)

Fig. 2 Secondary electron images (a-e), backscattered electron image (f) and its energy dispersive spectra (g, h) of the as-co-fired BiMg2VO6 surfaces sintered at 720℃(a), 740℃(b), 760℃(c), 780℃(d) and 840℃(e) for 2 h

图3 不同温度下烧结的BiMg2VO6陶瓷的实测密度和相对密度

Fig. 3 Apparent and relative densities of BiMg2VO6 ceramics as a function of sintering temperature

图4 不同温度下烧结的BiMg2VO6陶瓷的微波介电性能

Fig. 4 Microwave dielectric properties (permittivity, Q×f value) of BiMg2VO6 ceramics as a function of sintering temperature

图5 780℃烧结所得BiMg2VO6陶瓷的介电常数虚部(a)、介电常数实部(b)、拟合和实测的红外反射谱(c)

Fig. 5 Imaginary part of complex permittivity(a), real part of complex permittivity (b) and fitted and measured infrared reflectivity spectra (c) of BiMg2VO6 ceramic sintered at 780℃

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低温烧结陶瓷BiMg₂VO₆的微波介电性能

Microwave Dielectric Properties of BiMg₂VO₆ Ceramic with Low Sintering Temperature

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