Journal of Inorganic Materials ›› 2014, Vol. 29 ›› Issue (11): 1223-1227.doi: 10.15541/jim20140309

• Orginal Article • Previous Articles     Next Articles

Structure and Optical Properties of CuInSe2 and Cu0.9In0.9Zn0.2Se2 Thin Films Deposited by One-step Radio-frequency Magnetron Sputtering

Wei-Jun WANG(), Jun HE, Ke-Zhi ZHANG, Jia-Hua TAO, Lin SUN(), Ye CHEN, Ping-Xiong YANG, Jun-Hao CHU   

  1. Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China
  • Received:2014-06-16 Online:2014-11-20 Published:2014-10-24
  • Supported by:
    Foundation item: Shanghai Committee of Science and Technology(11ZR1411400, 10JC1404600);National Natural Science Foundation of China(61106064, 60990312, 61076060)


CuInSe2 (CIS) and Cu0.9In0.9Zn0.2Se2 (CIZS) thin films were deposited by Radio-Frequency (RF) magnetron sputtering process. X-ray diffraction (XRD) results indicate CIZS film deposited at 300℃ (CIZS-300) is (220) preferred orientation which is different from (112) preferred orientation of other films. Cu-poor and appropriate temperature are major factors for (220) preferred orientation of grains. The Raman spectra show a strong peak around 171 cm-1 and a weak peak around 206 cm-1, which corresponding to A1 and B2 modes. Substitution of Zn for Cu leads to a broadening and blue-shift of A1 Raman mode. The band gap Eopt of CIZS film increases due to a reduced Se p-Cu d interband repulsion with Zn doping. Scanning electron microscope (SEM) measurement demonstrates that the surface morphology of CIZS is more compact and smoother than that of CIS thin films.

Key words: magnetron sputtering, CIZS thin film, Zn doping

CLC Number: 

  • TQ174