无机材料学报 ›› 2019, Vol. 34 ›› Issue (12): 1245-1256.DOI: 10.15541/jim20190086

所属专题: 二维材料

• 综述 •    下一篇

介质衬底上生长h-BN二维原子晶体的研究进展

张兴旺1,2,高孟磊1,2,孟军华1,2   

  1. 1. 中国科学院 半导体研究所, 半导体材料科学重点实验室, 北京 100083
    2. 中国科学院大学 材料与光电研究中心, 北京 100049
  • 收稿日期:2019-02-27 修回日期:2019-04-19 出版日期:2019-12-20 发布日期:2019-06-17
  • 作者简介:张兴旺(1972-), 男, 博士, 研究员. E-mail:xwzhang@semi.ac.cn
  • 基金资助:
    国家重点研发计划(2018YFB0406503);国家自然科学基金(61674137);国家自然科学基金(61874106);北京市自然科学基金(4184101)

Research Progress of Direct Growth of Two-dimensional Hexagonal Boron Nitride on Dielectric Substrates

ZHANG Xing-Wang1,2,GAO Meng-Lei1,2,MENG Jun-Hua1,2   

  1. 1. Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
    2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2019-02-27 Revised:2019-04-19 Online:2019-12-20 Published:2019-06-17
  • Supported by:
    National Key Research and Development Program of China(2018YFB0406503);National Natural Science Foundation of China(61674137);National Natural Science Foundation of China(61874106);Beijing Natural Science Foundation(4184101)

摘要:

六方氮化硼(h-BN)二维原子晶体以其独特的结构、优异的性质以及广泛的应用前景引起了人们的普遍关注。高质量h-BN材料的制备是其性质研究与实际应用的前提。机械剥离的h-BN尺寸有限, 普遍采用的化学气相沉积(CVD)技术通常以过渡金属为衬底, 器件应用时需要将h-BN转移到其它衬底上。因此, 在介质衬底上直接生长h-BN成为二维材料研究领域的一个重要发展方向。本文总结了近年来介质衬底(包括: Si基衬底、蓝宝石衬底和石英衬底等)上直接生长h-BN二维原子晶体的主要进展。人们采用CVD、金属有机气相外延法(MOVPE)、物理气相沉积法(PVD)等方法, 通过提高生长温度、衬底表面处理、两步生长等工艺实现了介质衬底上直接生长h-BN。此外, 还介绍了介质衬底上h-BN二维原子晶体的主要应用。

关键词: 六方氮化硼, 二维材料, 介质衬底, 直接生长, 综述

Abstract:

In recent years, hexagonal boron nitride (h-BN) two-dimensional (2D) atomic crystal has attracted considerable attention due to its unique structure, novel property and potential applications. The synthesis of high quality h-BN determines how far we can go for property research and practical applications. However, the sizes of h-BN domains obtained by mechanical exfoliation were limited to several micrometers. Transition metal substrates are usually used in the CVD growth of 2D h-BN layers, and thus a transfer process is required for fabricating h-BN-based electronic devices. Therefore, it is strongly desirable to directly synthesize 2D h-BN on dielectric substrates. In this article, we review recent process on the direct growth of h-BN by CVD, MOVPE, PVD on different dielectric substrates, including silicon-based substrates, sapphire, quartz, etc. Several approaches, such as, increasing substrate temperature, oxide-assisted nucleation, and surface nitridation were adopted to directly grow h-BN on dielectric substrates. Besides, we also summarized the main applications of 2D h-BN grown on dielectric substrates.

Key words: h-BN, 2D material, dielectric substrates, direct growth, review

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