Journal of Inorganic Materials

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Growth Characteristics of Chemical Vapor Deposited SiC Coatings

LIU Rong-Jun; ZHANG Chang-Rui; ZHOU Xin-Gui; CAO Ying-Bin   

  1. Key Laboratory of National Defense Technology; College of Aerospace & Materials Engineering; National University of Defense Technology; Changsha 410073; China
  • Received:2004-02-19 Revised:2004-03-19 Published:2005-03-20 Online:2005-03-20

Abstract: The coatings of β-SiC were prepared from the methyltrichlorosilane (MTS) by low-pressure chemical vapor deposition on graphite substrates. The as deposited coatings were characterized by SEM and XRD. The
results of SEM and XRD analyses indicate that the surface morphology of the CVD SiC coating shows pyramid structure with (111) plane preferred orientation. HRTEM was used to investigate the microstructures of the
coatings and the interface between the coatings and graphite substrate. The results show that SiC crystal grows according to the preferred orientation of the substrate at the beginning of the deposition, and then the crystal adjusts
the growth to (111) plane.

Key words: chemical vapor deposition, SiC, crystal growth, coatings, HRTEM

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