Journal of Inorganic Materials

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Anisotropic Ferroelectric Properties of MOD-derived Bi3.25Nd0.75Ti3O12 Thin Films

MA Jian-Hua; MENG Xiang-Jian; SUN Jing-Lan; CHU Jun-Hao   

  1. National Laboratory for Infrared Physics; Shanghai Institute of Technical Physics; Chinese Academy of Sciences; Shanghai 200083; China
  • Received:2004-02-20 Revised:2004-04-06 Published:2005-03-20 Online:2005-03-20

Abstract: The c-axis and a-axis preferential-oriented Bi3.25Nd0.75Ti3O12 (BNT) thin films together with (117)-orientation were deposited on (111)Pt/Ti/SiO2/Si substrates by a metalorganic decomposition (MOD) method. The results show that the crystallinity of BNT thin films mainly depends on the pre-annealing conditions. BNT thin films with a-axis preferential orientation show high remnant polarization, high coercive field, high dielectric constant, high dissipation factor, and large capacitance tuning, while those with c-axis preferential orientation are on the contrary. The anisotropic ferroelectric properties of BNT thin films are similar to those of Bi4Ti3O12 (BIT).

Key words: BNT thin films, crystallinity, ferroelectricity, anisotropy

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