Effect of Annealing Temperature on Metal/Dielectric Multilayers for Fabricating Broadband Pulse Compression Gratings

doi:10.15541/jim20140025

Abstract

Abstract:

Metal/dielectric multilayers were prepared by physical vapor deposition process using gold as the metal material, HfO₂ and SiO₂ as high and low refractive index materials, respectively. These stacks were used to fabricate broadband pulse compression gratings. Influences of annealing temperature on the surface root-mean-square roughness, reflectivity and resistance to chemical cleaning damage were investigated. The experimental results indicated that surface root-mean-square roughness of these multilayers changed only slightly after annealing. Their resistance to chemical cleaning damage improved with the annealing temperature increase, whereas their reflectivity decreased. The metal/dielectric multilayers annealed at 250℃ for 10 h could not only endure the process of chemical cleaning, but also slightly decrease the reflectivity, suggesting that it is an optimal annealing process for metal/dielectric multilayers.

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Key words: metal/dielectric multilayers, pulse compression gratings, annealing, chemical cleaning, reflectivity

CLC Number:

TG174

WU Jian-Bo, JIN Yun-Xia, GUAN He-Yuan, KONG Fan-Yu, LIU Wen-Wen, LIU Shi-Jie, YI Kui. Effect of Annealing Temperature on Metal/Dielectric Multilayers for Fabricating Broadband Pulse Compression Gratings[J]. Journal of Inorganic Materials, 2014, 29(10): 1087-1092.

Figures/Tables 11

Fig. 1 Cross section SEM image of the as-deposited metal/ dielectric multilayers

Fig. 2 Reflectivity of the as-deposited metal/dielectric multilayers

Fig. 3 AFM morphologies of samples annealed at different temperatures

Fig. 4 Reflectivity of metal/dielectric films after being annealed at different temperatures

Table1 Optical constants of gold in the wavelength range of 700-900 nm

λ/nm	n	k
689	0.160	3.80
730	0.164	4.35
775	0.174	4.86
827	0.188	5.39
886	0.210	5.88
954	0.236	6.47

Fig. 5 Theoretical arithmetic relationship between reflectively of metal/dielectric multilayers and interstitial rate of gold in the interfacial layers

Fig. 6 Craze on surface of the sample after being annealed at 200℃ and chemical cleaning

Fig. 7 Profile of the edge after the dielectric film peeling off

Fig. 8 Typical SEM images of samples after being annealed at different temperatures and chemical cleaning

Fig. 9 XPS survey spectra of samples after chemical cleaning

Fig. 10 Schematic of relationship between additional stress distributing and surface undulation

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