Studies on H2O-based Atomic Layer Deposition of Al2O3 Dielectric on Pristine Graphene

doi:10.3724/SP.J.1077.2012.11663

Journal of Inorganic Materials ›› 2012, Vol. 27 ›› Issue (9): 956-960.DOI: 10.3724/SP.J.1077.2012.11663

• Research Paper • Previous Articles Next Articles

Studies on H₂O-based Atomic Layer Deposition of Al₂O₃ Dielectric on Pristine Graphene

ZHANG You-Wei^{1, 2}, WAN Li¹, CHENG Xin-Hong², WANG Zhong-Jian², XIA Chao², CAO Duo², JIA Ting-Ting², YU Yue-Hui²

(1. Department of Physics, Wenzhou University, Wenzhou 325035, China; 2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem & Information Technology, Chinese Academy of Sciences, Shanghai 200050, China)

Received:2011-10-25 Revised:2011-11-30 Published:2012-09-20 Online:2012-08-28
About author:ZHANG You-Wei. E-mail: ywzhang@mail.sim.ac.cn
Supported by:
National Natural Science of China (60807002, 11175229)

Abstract

Abstract: Al₂O₃ films were deposited directly onto the surface of graphene by H₂O-based atomic layer deposition (ALD) method, where physically absorbed water molecules acted as oxidant and the growing temperature changed from 60℃ to 260℃. The morphology of Al2O3 films was characterized by atomic force microscope (AFM). AFM images revealed that the distribution of physically adsorbed H₂O molecules on the surface of graphene decided the morphology of Al₂O₃ film, and conformal and uniform Al₂O₃ film was achieved with the root mean square (RMS) roughness of 0.26 nm when the growing temperature was around 100-130℃. X-ray photoelectron spectroscopy (XPS) analysis showed that the O/Al ratio was close to stoichiometric condition of 1.5. Raman spectroscopy analysis revealed that H₂O-based ALD process did not destroy the structure of graphene. The growing temperature in the H₂O-based ALD process had significant impact on the initial nucleation and the growth of Al₂O₃ films.

Key words: graphene, atomic layer deposition, Al₂O₃ dielectrics

CLC Number:

O484

ZHANG You-Wei, WAN Li, CHENG Xin-Hong, WANG Zhong-Jian, XIA Chao, CAO Duo, JIA Ting-Ting, YU Yue-Hui. Studies on H₂O-based Atomic Layer Deposition of Al₂O₃ Dielectric on Pristine Graphene[J]. Journal of Inorganic Materials, 2012, 27(9): 956-960.

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Studies on H₂O-based Atomic Layer Deposition of Al₂O₃ Dielectric on Pristine Graphene

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