Influence of Annealing Process on the Photostimulated Luminescence Properties of CsBr:Eu2+

doi:10.3724/SP.J.1077.2010.00952

Abstract

Abstract:

CsBr:Eu²⁺ powders were prepared by solid-state reaction. The photostimulated luminescence (PSL) spectra, the differential absorption spectra (DAS) and PSL lifetime spectra were systematically investigated. The results reveal the annealing process can increase the PSL intensity and decrease the PSL lifetime. The relationship between the annealing atmosphere and PSL properties were discussed in detail, and the results reveal that substitutional oxygen ions O_s^- (S: substitute, O^- substitute for Br^-) and interstitial hydrogen atoms H_i⁰ are formed in the annealing process. All of O_s^-, H_i⁰and H_2i⁰ are electron trap centers, which are closely related to the formation of hole traps centers.

Key words: CsBr:Eu²⁺, photostimulated luminescence, anneal, electron/hole trap center

CLC Number:

TN304

MENG Jia, ZHAO Li-Li, WU Jie-Hua, SONG Li-Xin. Influence of Annealing Process on the Photostimulated Luminescence Properties of CsBr:Eu²⁺[J]. Journal of Inorganic Materials, 2010, 25(9): 952-956.

References

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Influence of Annealing Process on the Photostimulated Luminescence Properties of CsBr:Eu²⁺

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