Journal of Inorganic Materials

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Epitaxial Growth and Phase Transition Properties of Vanadium DioxideThin Film on Sapphire Substrate

WU Zhao-Ping; FANG Ping-An   

  1. Shanghai institute of Ceramics; Chinese Academy of Sciences Shanghai 200050 China
  • Received:1998-11-04 Revised:1999-03-24 Published:1999-10-20 Online:1999-10-20

Abstract: Vanadium Dioxide(VO2) thin films deposited on(1120) sapphire substrates by pulsed laser ablation were characterized by using the techniques of XRD,
XRD pole figure,RBS/channeling and electrical measurements.The results show that VO2 thin film on the (1120) sapphire grows epitaxially
with out-of-plane:(100)VO2//(1120)sapphire and in-plane: VO2[010]//sapphire[0001].Channeling cannot be found in RBS/Channeling analysis,indicating that the film
fails to single crystalline growth. The further analysis of the crystallography of the (100)VO2 reveals that within 5 1attice periods,no other lattice vector
exists in the (100) plane of VO2 to match the lattice of sapphire,therefore,it is impossible to deposit single

Key words: VO2,phase transition,pole figure,epitaxy

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