[1] Schmidt R, Brinkman A W. Electrical properties of screen-printed NiMn2O4+ δ , J. Am. Ceram. Soc. , 2005, 25(12): 3027 - 3031. [2] Kanade S A, Puri V. Properties of thick film Ni0. 6Co0. 4FeyMn2?yO4: (0≤ y≤0. 5) NTC ceramic, J. Alloys Compd. , 2009, 475(1 / 2): 352 - 355. [3] Park K. Structural and electrical properties of FeMg0. 7Cr0. 6Co0. 7?xAlxO4 (0≤x≤0. 3) thick film NTC thermistors, J. Am. Ceram. Soc. , 2006, 26(6): 909 - 914. [4] Park K, Bang D Y. Electrical properties of Ni-Mn-Co-(Fe) oxide thick-film NTC thermistors prepared by screen printing. J. Mater. Sci. : Mater. Electron. , 2003, 14(2): 81 - 87. [5] Kanade S A, Puri V. Electrical properties of thick-film NTC thermistor composed of Ni0. 8Co0. 2Mn2O4 ceramic: Effect of inorganic oxide binder. Mater. Res. Bull. , 2008, 43(4): 819 - 824. [6] Rane S, Puri V. A study on sintering and microstructure development of fritless silver thick film conductors. J. Mater. Sci. : Mater. Electron. , 2000, 11(9): 667 - 674. [7] Kanade S A, Puri V. Composition dependent resistivity of thick film Ni1- xCo xMn2O4: (0≤ x≤1) NTC thermistors. Mater. Lett. , 2006, 60(11): 1428 - 1431. [8] Jagtap S, Rane S, Gosavi S, et al. Characterization and electrical properties of spinel type environment friendly thick film NTC thermistors, J. Am. Ceram. Soc. , 2008, 28(13): 2501 - 2507. [9] Thangadurai V, Beurmann P S, Weppne W. Mixed oxide ion and electronic conductivity in perovskite type SrSnO3 by Fe substitution. Mater. Sci. Eng. B, 2003, 100(1): 18 - 22. [10] Macklen E D. Thermistors. Ayr, Scotland: Electrochemical Publications Ltd. , 1979: 33 - 37. [11] 袁昌来, 刘心宇, 马家峰, 等 (YUAN Chang-lai, et al). Bi0. 5Ba0. 5Fe0. 5Ti0. 49Nb0. 01O3 热敏陶瓷的微结构和电学性能研究. 物理学报 ( Acta Phys. Sin. ), 2010, 59(6): 4253 - 4260. [12] Cole K S, Cole R H. Dispersion and absorption in dielectrics. I. alternating current characteristics. J. Chem. Phys. , 1941, 9(4): 341 - 352. [13] Nobre M A L, Lanfredi S. Negative temperature coefficient thermistor based on Bi3Zn2Sb3O14 ceramic: an oxide semiconductor at high temperature. Appl. Phys. Lett. , 2003, 82(14): 2284 - 2286. [14] Xiang P H, Takeda H, Shiosaki T. Characterization of manganese- doped BaTiO3-(Bi1/2Na1/2)TiO3 positive temperature coefficient of resistivity ceramics using impedance spectroscopy. J. Appl. Phys. , 2008, 103(6): 0641021 - 1 - 6. [15] Nobre M A L, Lanfredi S. Grain boundary electric characterization of Zn7Sb2O12 semiconducting ceramic: A negative temperature coefficient thermistors. J. Appl. Phys. , 2003, 93(9): 5576 - 5582. [16] Gerhardt R. Impedance and dielectric spectroscopy revisited: distinguishing localized relaxation from long-range conductivity. J. Phys. Chem. Solids, 1994, 55(12): 1491 - 1506. |