High Dielectric-permittivity Properties and Relevant Mechanism of NaCu3Ti3Sb0.5Nb0.5O12 Ceramics

doi:10.15541/jim20160702

Abstract

Abstract:

A series of NaCu₃Ti₃Sb_0.5Ta_0.5O₁₂ ceramics were prepared by conventional solid-state reaction technique at different sintering temperatures. Their crystalline structures, microstructures, dielectric properties and complex impedance were systematically investigated. All the ceramics show the main phase of perovskite-related crystallographic structure, and their dielectric properties change significantly with sintering temperature. Those ceramics sintered above 1020°C perform high dielectric-permittivity properties with ε' over 3000. Impedance spectroscopy analysis reveals that NaCu₃Ti₃Sb_0.5Ta_0.5O₁₂ ceramics are electrically heterogeneous and composed of semiconducting grains and insulating grain boundaries. Moreover, a small amount of CuO secondary phase and Cu²⁺/Cu⁺, Ti⁴⁺/Ti³⁺, Sb⁵⁺/Sb³⁺ and Ta⁵⁺/Ta³⁺ aliovalences are found to exist in NaCu₃Ti₃Sb_0.5Ta_0.5O₁₂ ceramics through XRD and XPS analysis. Internal barrier layer capacitance effect suggests the origin of the high dielectric-permittivity properties in NaCu₃Ti₃Sb_0.5Ta_0.5O₁₂ ceramics.

Key words: NaCu₃Ti₃Sb_0.5Ta_0.5O₁₂, high dielectric-permittivity properties, CuO secondary phase, aliovalences, internal barrier layer capacitance effect

CLC Number:

TM283

YANG Shuai, XU Pan-Pan, WANG Ming-Wen, HAO Wen-Tao, SUN Li, CAO En-Si, ZHANG Yong-Jia. High Dielectric-permittivity Properties and Relevant Mechanism of NaCu₃Ti₃Sb_0.5Nb_0.5O₁₂ Ceramics[J]. Journal of Inorganic Materials, 2017, 32(10): 1029-1035.

Figures/Tables 6

Fig. 1 XRD patterns of the various NCTSTO ceramics

Fig. 2 Fractured cross-sectional SEM images of the NCTSTO ceramics sintered at different temperatures(a) 1020℃; (b) 1040℃; (c) 1060℃; (d) 1080℃; (e) 1100℃

Fig. 3 Room temperature dielectric dispersion spectra of the NCTSTO ceramics sintered at different temperatures

Fig. 4 (a) Dielectric dispersion change with temperature and (b) variation of ε' with temperature of the NCTSTO ceramic sintered at 1060℃

Fig. 5 Complex impedance of NCTSTO ceramic sintered at 1060℃ and measured at (a) room temperature, (b) 100℃, (c) 200℃ and (d) 300℃

Fig. 6 (a) Cu-2p peaks, (b) Ti-2p peaks, (c) Sb-3d peaks and (d) Ta-4f peaks of XPS spectra of the NCTSTO ceramic sintered at 1060℃

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High Dielectric-permittivity Properties and Relevant Mechanism of NaCu₃Ti₃Sb_0.5Nb_0.5O₁₂ Ceramics

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References 35

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[1]	HAO Wen-Tao, XU Pan-Pan, ZHANG Jia-Liang, CAO En-Si, PENG Hua. Giant Dielectric-Permittivity Property of NaCu₃Ti₃NbO₁₂ and NaCu₃Ti₃SbO₁₂ Ceramics and Low Dielectric Loss in NaCu₃Ti₃SbO₁₂ Ceramics [J]. Journal of Inorganic Materials, 2014, 29(1): 62-66.
[2]	HAO Wen-Tao, ZHANG Jia-Liang, TAN Yong-Qiang, ZHENG Peng, WANG Chun-Lei. Origin of Giant Dielectric Permittivity in CaCu₃Ti₄O₁₂ Ceramics [J]. Journal of Inorganic Materials, 2011, 26(10): 1058-1062.