Journal of Inorganic Materials ›› 2017, Vol. 32 ›› Issue (10): 1029-1035.DOI: 10.15541/jim20160702

• Orginal Article • Previous Articles     Next Articles

High Dielectric-permittivity Properties and Relevant Mechanism of NaCu3Ti3Sb0.5Nb0.5O12 Ceramics

YANG Shuai1,2, XU Pan-Pan3, WANG Ming-Wen1,2, HAO Wen-Tao1,2, SUN Li1,2, CAO En-Si1,2, ZHANG Yong-Jia1,2   

  1. (1. Key Laboratory of Advanced Transducers and Intelligent Control Systems, Taiyuan University of Technology, Taiyuan 030024, China; 2. College of Physics and Optoelectronics, Taiyuan University of Technology, Jinzhong 030600, China; 3. College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, China)
  • Received:2016-12-29 Revised:2017-03-07 Published:2017-10-20 Online:2017-09-21
  • About author:YANG Shuai. E-mail:
  • Supported by:
    National Natural Science Foundation of China(51602214, 11404236, 11604234)


A series of NaCu3Ti3Sb0.5Ta0.5O12 ceramics were prepared by conventional solid-state reaction technique at different sintering temperatures. Their crystalline structures, microstructures, dielectric properties and complex impedance were systematically investigated. All the ceramics show the main phase of perovskite-related crystallographic structure, and their dielectric properties change significantly with sintering temperature. Those ceramics sintered above 1020°C perform high dielectric-permittivity properties with ε' over 3000. Impedance spectroscopy analysis reveals that NaCu3Ti3Sb0.5Ta0.5O12 ceramics are electrically heterogeneous and composed of semiconducting grains and insulating grain boundaries. Moreover, a small amount of CuO secondary phase and Cu2+/Cu+, Ti4+/Ti3+, Sb5+/Sb3+ and Ta5+/Ta3+ aliovalences are found to exist in NaCu3Ti3Sb0.5Ta0.5O12 ceramics through XRD and XPS analysis. Internal barrier layer capacitance effect suggests the origin of the high dielectric-permittivity properties in NaCu3Ti3Sb0.5Ta0.5O12 ceramics.


Key words: NaCu3Ti3Sb0.5Ta0.5O12, high dielectric-permittivity properties, CuO secondary phase, aliovalences, internal barrier layer capacitance effect

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