Journal of Inorganic Materials ›› 2010, Vol. 25 ›› Issue (7): 700-704.DOI: 10.3724/SP.J.1077.2010.00700

• Research Paper • Previous Articles     Next Articles

Preparation and Characterization of Polymer-CdSe/ZnS QDs Composite Thin Film

ZHOU Chang-Hua1,2,3, WANG Xin2, SHEN Huai-Bin2, LI Lin-Song2, CHEN Jian-Min1   

  1. (1. State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics Chinese Academy of Sciences, Lanzhou 730000, China; 2. Key Laboratory for Special Functional Materials of the Ministry of Education, Henan University, Kaifeng 475004, China; 3. Graduate University of the Chinese Academy of Sciences, Beijing 100049, China)
  • Received:2009-09-24 Revised:2009-12-01 Published:2010-07-20 Online:2010-06-10

Abstract:

High quality water-soluble semiconductor CdSe/ZnS quantum dots (QDs) were prepared by a phase transfer method, in which amphiphilic oligomers (polymaleic acid n-hexadecanol alcohol ester, PMAH) was used as surface coating agents. The as-prepared aqueous QDs were high fluorescent and extremely stable. To form the composite emulsion, different concentration of water-soluble CdSe/ZnS QDs was dispersed in PAA emulsion. The polymer-CdSe/ZnS QDs composite thin film was then fabricated using the composite emulsion with a spin-coating method. The obtained CdSe/ZnS QDs composite thin film was transparent under sun light and had bright red light under the irradiation of UV light. The composite thin film was also characterized with X-ray Photoelectron Spectroscopy. The photoluminescence (PL) property and tolerance to UV light of the thin film were also characterized in dark circumstances. The PL intensity of the film showed increment with the increase of layer number and the concentration of CdSe/ZnS QDs within each film. Furthermore, the composite film retained its high quantum yield (QY) with only 5% QY lost after UV irradiation for 800 h.

Key words: CdSe/ZnS QDs, composite thin film, preparation

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