Journal of Inorganic Materials ›› 2023, Vol. 38 ›› Issue (9): 1069-1075.DOI: 10.15541/jim20230045
Special Issue: 【信息功能】敏感陶瓷（202409）； 【信息功能】MAX层状材料、MXene及其他二维材料(202409)； 【能源环境】钙钛矿(202409)
• RESEARCH ARTICLE • Previous Articles Next Articles
CAI Kai(
), JIN Zhiwen()
Received:2023-01-29
Revised:2023-04-11
Published:2023-09-20
Online:2023-05-04
Contact:
JIN Zhiwen, professor. E-mail: jinzw@lzu.edu.cnAbout author:CAI Kai (1998-), male, Master candidate. E-mail: caik20@lzu.edu.cn
Supported by:CLC Number:
CAI Kai, JIN Zhiwen. Photodetector Based on Two-dimensional Perovskite (PEA)2PbI4[J]. Journal of Inorganic Materials, 2023, 38(9): 1069-1075.
Fig. 1 (a) Structure of the photodetector device prepared on a glass substrate, (b) schematic diagram of preparation process for the (PEA)2PbI4 thin film, and (c) SEM image of the (PEA)2PbI4 thin film after being annealed at 80 ℃
Fig. 2 (a) XRD pattern of a typical (PEA)2PbI4 film,(b) crystal structure of two-dimensional layered (PEA)2PbI4, and (c) UV-Vis absorption and (d) PL spectra of (PEA)2PbI4 film
Fig. 3 (a) Dark current versus applied voltage, (b) dark current versus time in the dark state, (c) I-V curves, and (d) I-t curves illuminated at different wavelengths with 1 mW/cm2 for (PEA)2PbI4 photodetector Colorful figures are available on website
Fig. 4 (a) I-V and (b) I-t curves illuminated at 450 nm with different light intensities, (c) fitted line of photocurrent vs. light intensity illuminated at 450 nm, (d) responsivities and detectivities at different light intensities, (e) response time and (f) noise currents tested at different frequencies for (PEA)2PbI4 photodetector Colorful figures are available on website
Fig. 5 Stability of the 2D (PEA)2PbI4 film and photodetector (a) XRD patterns and (b) UV-Vis absorption spectra of (PEA)2PbI4 films before and after laid in the dark and N2 atomsphere for 1 m; (c) I-t curves of (PEA)2PbI4 photodetectors illuminated at 0.5 mW·cm-2 before and after 30 d; (d) I-t curves of the device under continuous illumination of 1200 s
Fig. S1 (a) Picture of a photodetector based on (PEA)2PbI4 film; (b) SEM image of (PEA)2PbI4 film after being annealed at high temperature(200 ℃)
Fig. S2 EDS mappings of (PEA)2PbI4 thin film
Fig. S3 XRD patterns of (PEA)2PbI4 without and with DMF treatment before spin-coating
Fig. S4 Tauc plot of (PEA)2PbI4 film with an optical band gap of 2.357 eV
Fig. S5 Bias-dependent photoconductivity of (PEA)2PbI4
Fig. S6 I-V curves of photodetector with up-electrode in the light-dark state
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