Journal of Inorganic Materials ›› 2023, Vol. 38 ›› Issue (4): 413-420.DOI: 10.15541/jim20220712
Special Issue: 【信息功能】柔性材料(202409); 【信息功能】神经形态材料与器件(202409)
• Topical Section on Neuromorphic Materials and Devices (Contributing Editor: WAN Qing) • Previous Articles Next Articles
TIAN Yu1,2(), ZHU Xiaojian2(
), SUN Cui2, YE Xiaoyu2, LIU Huiyuan2, LI Runwei2
Received:
2022-11-28
Revised:
2022-12-17
Published:
2023-04-20
Online:
2022-12-28
Contact:
ZHU Xiaojian, professor. E-mail: zhuxj@nimte.ac.cnAbout author:
TIAN Yu (1997-), male, Master candidate. E-mail: tianyu@nimte.ac.cn
Supported by:
CLC Number:
TIAN Yu, ZHU Xiaojian, SUN Cui, YE Xiaoyu, LIU Huiyuan, LI Runwei. Intrinsically Stretchable Threshold Switching Memristor for Artificial Neuron Implementations[J]. Journal of Inorganic Materials, 2023, 38(4): 413-420.
Fig. 2 I-V characteristics of the Cu@GaIn/AgNWs-PU/Cu@GaIn device (a) I-V curve of the Cu@GaIn/AgNWs-PU/Cu@GaIn device; (b) Cumulative distribution function of the operation voltages; (c) I-V curves of the device under different compliance currents; (d) Dependence of the operation voltage on the thickness of the AgNWs-PU film
Fig. 3 Working mechanism of the Cu@GaIn/AgNWs-PU/Cu@GaIn device (a) Dependence of the device resistance at the LRS on the compliance currents; (b) Illustration of the dynamic Ag filament formation/rupture between AgNWs during threshold switching process
Fig. 4 Emulation of the integrate-and-fire behaviors of biological neurons with the Cu@GaIn/AgNWs-PU/Cu@GaIn device (a, b) Schematic diagram for (a) biological neuron and (b) artificial neuron; (c) Typical integrate-and-fire behavior of the memristor based artificial neuron; Colorful figures are available on website
Fig. 5 Influences of the voltage pulse amplitude and interval on the integrate-and-fire behaviors of the memristor based artificial neuron (a) Integrate-and-fire behaviors of the device as a function of the voltage pulse amplitude with pulse interval and width at 30 ms and 10 ms, respectively; (b) Relationship between the required pulse number for device firing (NFire) and the pulse amplitude; (c) Integrate-and-fire behaviors of the device as a function of the voltage pulse interval with pulse amplitude and width at 6 V and 10 ms, respectively; (d) Relationship between the required pulse number for device firing (NFire) and the pulse interval; Colorful figures are available on website
Fig. 6 Threshold switching voltages of the Cu@GaIn/AgNWs-PU/Cu@GaIn device under different tensile strain conditions (a) Schematics of the device stretching under tensile strain; (b) Optical images of the device before and after being stretched by 20%; (c, d) Evolution of the operation voltage for the device with tensile strain in (c) x and (d) y directions
Fig. 7 Integrate-and-fire function test of artificial neuron under tensile strain conditions (a) Control pulse interval (30 ms), width (10 ms) and amplitude (6 V) being unchanged, and the NFire change of the device by changing tensile strain ratio of the device in the x direction; (b) Evolution of NFire of the device with tensile strain ratio
[1] |
WANG T Y, MENG J L, CHEN L, et al. Flexible 3D memristor array for binary storage and multi-states neuromorphic computing applications. InfoMat, 2021, 3(2):212.
DOI URL |
[2] |
HAN X, Xu Y, Sun B, et al. Highly transparent flexible artificial nociceptor based on forming-free ITO memristor. Applied Physics Letters, 2022, 120(9):094103.
DOI URL |
[3] |
PARK H L, LEE Y, KIM N, et al. Flexible neuromorphic electronics for computing, soft robotics, and neuroprosthetics. Advanced Materials, 2020, 32(15):1903558.
DOI URL |
[4] | LI Z Y, ZHU L Q, GUO L Q, et al. Mimicking neurotransmitter activity and realizing algebraic arithmetic on flexible protein-gated oxide neuromorphic transistors. ACS Applied Materials & Interfaces, 2021, 13(6):7784. |
[5] |
LI H X, HU J Y, CHEN A Z, et al. Single-transistor neuron with excitatory-inhibitory spatiotemporal dynamics applied for neuronal oscillations. Advanced Materials, 2022, 34(51):2207371.
DOI URL |
[6] | STOLIAR P, TRANCHANT J, CORRAZE B, et al. A leaky integrate-and-fire neuron analog realized with a Mott insulator. Advanced Functional Materials, 2017, 27(11):1604740. |
[7] |
BO Y, ZHANG P, LUO Z, et al. NbO2 memristive neurons for burst-based perceptron. Advanced Intelligent Systems, 2020, 2(8):2000066.
DOI URL |
[8] | YANG J Q, WANG R, WANG Z P, et al. Leaky integrate-and-fire neurons based on perovskite memristor for spiking neural networks. Nano Energy, 2020, 74: 104828. |
[9] |
SHI Q W, WANG J, AZIZ I, et al. Stretchable and wearable resistive switching random-access memory. Advanced Intelligent Systems, 2020, 2(7):2000007.
DOI URL |
[10] |
CHEN P, ZHANG X, WU Z, et al. High-yield and uniform NbOx-based threshold switching devices for neuron applications. IEEE Transactions on Electron Devices, 2022, 69(5):2391.
DOI URL |
[11] |
HUA Q, WU H Q, GAO B, et al. Low-voltage oscillatory neurons for memristor-based neuromorphic systems. Global Challenges, 2019, 3(11):1900015.
DOI URL |
[12] |
XU Y, WANG H, YE D, et al. Electrohydrodynamically printed flexible organic memristor for leaky integrate and fire neuron. IEEE Electron Device Letters, 2021, 43(1):116.
DOI URL |
[13] | ZHU J X, ZHANG X, WANG M R, et al. Flexible memristive spiking neuron for neuromorphic sensing and computing. Acta Physica Sinica, 2022, 71(14):338. |
[14] |
YI X, YU Z, NIU X, et al. Intrinsically stretchable resistive switching memory enabled by combining a liquid metal-based soft electrode and a metal-organic framework insulator. Advanced Electronic Materials, 2019, 5(2):1800655.
DOI URL |
[15] |
YANG M, ZHAO X, TANG Q, et al. Stretchable and conformable synapse memristors for wearable and implantable electronics. Nanoscale, 2018, 10(38):18135.
DOI PMID |
[16] | TANG D X, LIU J Y, WANG Y X, et al. Research progress in flexible resistive random access memory materials. J. Mater. Eng., 2020, 48(7):81. |
[17] |
YUAN B, ZHAO C, SUN X, et al. Lightweight liquid metal entity. Advanced Functional Materials, 2020, 30(14):1910709.
DOI URL |
[18] |
LU Y, GAO S, LI F, et al. Stretchable and twistable resistive switching memory with information storage and computing functionalities. Advanced Materials Technologies, 2021, 6(1):2000810.
DOI URL |
[19] | ZHAN S Y, WANG Q G, WANG X L, et al.Electric field-induced nonlinear IV characteristic in a AgNWs/PVA film composite. 3rd Annual International Conference on Advanced Material Engineering, Shanghai, 2017: 106-111. |
[20] | LU P, QU Z, WANG Q, et al. Nonlinear conductive behaviour of silver nanowires/silicone rubber composites. IOP Conference Series: Materials Science and Engineering, 2018, 301(1):012052. |
[21] |
WANG M, WANG W, LEOW W R, et al. Enhancing the matrix addressing of flexible sensory arrays by a highly nonlinear threshold switch. Advanced Materials, 2018, 30(33):1802516.
DOI URL |
[22] |
WANG W, WANG M, AMBSOLI E, et al. Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices. Nature Communications, 2019, 10(1):81.
DOI PMID |
[23] |
ZHU H W, GAO H L, ZHAO H Y, et al. Printable elastic silver nanowire-based conductor for washable electronic textiles. Nano Research, 2020, 13(10):2879.
DOI |
[24] | 刘峥.IPDI 型水性聚氨酯的固含提高和表面能降低. 合肥: 中国科学技术大学硕士学位论文, 2010. |
[25] | YANG J, CAO J, HAN J, et al. Stretchable multifunctional self-powered systems with Cu-EGaIn liquid metal electrodes. Nano Energy, 2022, 101: 107582. |
[26] |
ZHIRNOV V V, MEADE R, CAVIN R K, et al. Scaling limits of resistive memories. Nanotechnology, 2011, 22(25):254027.
DOI URL |
[27] |
LIU D Q, WANG N, WANG G, et al. Nonvolatile bipolar resistive switching in amorphous Sr-doped LaMnO3 thin films deposited by radio frequency magnetron sputtering. Applied Physics Letters 2013, 102(13): 134105.
DOI URL |
[28] |
MILANO G, AONO M, BOARINO L, et al. Quantum conductance in memristive devices: fundamentals, developments, and applications. Advanced Materials, 2022, 34(32):2201248.
DOI URL |
[29] |
HUANG C H, MATSUZAKI K, NOMURA K. Threshold switching of non-stoichiometric CuO nanowire for selector application. Applied Physics Letters, 2020, 116(2):023503.
DOI URL |
[30] | 谢卓琳.氧化物忆阻器的电输运行为调控及其神经元仿生特性研究. 宁波: 中国科学院宁波材料技术与工程研究所博士学位论文, 2021. |
[31] |
YAN L, PEI Y, WANG J, et al. High-speed Si films based threshold switching device and its artificial neuron application. Applied Physics Letters, 2021, 119(15):153507.
DOI URL |
[32] |
ADDA C, CORRAZE B, STOLIAR P, et al. Mott insulators: a large class of materials for leaky integrate-and-fire (LIF) artificial neuron. Journal of Applied Physics, 2018, 124(15):152124.
DOI URL |
[33] |
ZHANG Y, FANG Z, YAN X. HfO2-based memristor-CMOS hybrid implementation of artificial neuron model. Applied Physics Letters, 2022, 120(21):213502.
DOI URL |
[34] |
ZHANG Y, XUE W, JI Z, et al. Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films. Nanoscale, 2017, 9(21):7037.
DOI PMID |
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