High-uniformity Memristor Arrays Based on Two-dimensional MoTe2 for Neuromorphic Computing

doi:10.15541/jim20210658

Abstract

Abstract:

Two-dimensional transition metal dichalcogenides are appealing materials for the preparation of nanoelectronic devices, and the development of memristors for information storage and neuromorphic computing using such materials is of particular interest. However, memristor arrays based on two-dimensional transition metal dichalcogenides are rarely reported due to low yield and high device-to-device variability. Herein, the 2D MoTe₂ film was prepared by the chemical vapor deposition method. Then the memristive devices based on 2D MoTe₂ film were fabricated through the polymethyl methacrylate transfer method and the lift-off process. The as-prepared MoTe₂ devices perform stable bipolar resistive switching, including superior retention characteristics (>500 s), fast switching (~60 ns for SET and ~280 ns for RESET), and excellent endurance (>2000 cycles). More importantly, the MoTe₂ devices exhibit high yield (96%), low cycle-to-cycle variability (6.6% for SET and 5.2% for RESET), and low device-to-device variability (19.9% for SET and 15.6% for RESET). In addition, a 3×3 memristor array with 1R scheme is successfully demonstrated based on 2D MoTe₂ film. And, high recognition accuracy (91.3%) is realized by simulation in the artificial neural network with the MoTe₂ devices working as synapses. It is found that the formation/rupture of metallic filaments is the dominating switching mechanism based on the investigations of the electron transport characteristics of high and low resistance states in the present MoTe₂ devices. This work demonstrates that large-scale two-dimensional transition metal dichalcogenides film is of great potential for future applications in neuromorphic computing.

Key words: two-dimensional material, MoTe₂, memristor array, neuromorphic computing

CLC Number:

TQ125

HE Huikai, YANG Rui, XIA Jian, WANG Tingze, DONG Dequan, MIAO Xiangshui. High-uniformity Memristor Arrays Based on Two-dimensional MoTe₂ for Neuromorphic Computing[J]. Journal of Inorganic Materials, 2022, 37(7): 795-801.

Figures/Tables 20

Fig. S1 PMMA transfer method

Fig. 1 Characterization of MoTe2 film and electrical measurement of Au/Ti/MoTe2/Au/Ti device (a) Photo of the centimeter-scale MoTe2 film; (b) Raman spectrum of the MoTe2 film; (c) Optical image of the prepared memristive devices with the structure of Au/Ti/MoTe2/Au/Ti; (d) Optical image of a 3×3 memristor array

Fig. S2 XRD pattern of the MoTe2 film

Fig. S3 Fabrication process of the Au/Ti/MoTe2/Au/Ti device

Fig. S4 AFM image (a) of 3×3 memristor array, and the height profile (b) along the horizontal line and the vertical line

Fig. S5 Electroforming process of the device

Fig. 2 Stable bipolar resistive switching behavior and retention characteristics of the MoTe2 device (a) 20 cycles of I-V curves with a compliance current of 3 mA; (b) Retention characteristics of the HRS and the LRS read at 0.1 V

Fig. 3 Fast switching and good endurance of the MoTe2 device (a) SET speed under the pulse with the amplitude 1.3 V; (b) RESET speed of the MoTe2 device under the pulse with the amplitude of -1.0 V; (c) Over 2000 switching cycles obtained by applying SET pulse of 1.7 V/700 ns and RESET pulse of -1.2 V/7 μs Colorful figures are available on website

Fig. S6 I-V curves of 24 Au/Ti/MoTe2/Au/Ti devices All devices show stable resistive switching with low cycle-to-cycle and device-to-device variability

Fig. 4 Cumulative distribution of (a) VSET and (b) VRESET of 24 devices

Fig. S7 Cumulative distribution of device (a) HRS and (b) LRS of 24 devices

Fig. S8 Estimation of the array size for the prepared CVD-MoTe2 device (a) Sneak current path at read in a square crossbar array where all bits except the selected one are at LRS, and the equivalent circuit can be represented by three resistors (region 1, region 2 and region 3); (b) Dependence of the read margin on the crossbar line number for both 1R and 1T1R schemes

Fig. S9 I-V characteristics of the Pt/TaOx/TiO2/TaOx/Pt selector[4]

Fig. 5 Stable resistive switching of the MoTe2 array device after electroforming process (a) Electroforming process of the MoTe2 array device; (b) 20 cycles I-V curves of the MoTe2 array device with a compliance current of 5 Ma

Fig. S10 I-V curves of 9 devices in 3×3 array

Fig. S11 Long-term potentiation and depression of the device using 50 potentiation (1 V, 500 ns) and depression (-1 V, 5 µs) presynaptic pulses

Fig. 6 Potentiation and depression processes of the present device Circles are experimental results, red lines are fitting results with a phenomenological model $G=a+c{{e}^{-\beta N}}$

Fig. 7 Recognition accuracy for small and large handwritten digit images with experimental devices and ideal numeric Colorful figures are available on website

Fig. 8 Mechanism analysis of the memristive behavior in the MoTe2 device (a) I-V characteristics at HRS under different temperatures, with current increasing as the temperature increases Fitted data using the Schottky emission model for HRS is shown in the inset; (b) I-V characteristics at LRS at different temperatures, with current decreasing as the temperature increase, indicating a metallic characteristic

Table 1 Key resistance values and the corresponding maximum number of word lines/bit lines (N) with read margin >10%

Scheme	$R_{\text{LRS}}^{\text{select}}$/Ω	$R_{\text{HRS}}^{\text{select}}$/Ω	$R_{\text{LRS}}^{\text{sneak}}$/Ω	N
1R	150	1500	150	4
1S1R	350	1700	1.25×10⁵	870

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High-uniformity Memristor Arrays Based on Two-dimensional MoTe₂ for Neuromorphic Computing

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