Journal of Inorganic Materials ›› 2022, Vol. 37 ›› Issue (7): 795-801.DOI: 10.15541/jim20210658

Special Issue: 【信息功能】Max层状材料、MXene及其他二维材料

Previous Articles     Next Articles

High-uniformity Memristor Arrays Based on Two-dimensional MoTe2 for Neuromorphic Computing

HE Huikai1(), YANG Rui2,3(), XIA Jian3,4, WANG Tingze3,4, DONG Dequan3,4, MIAO Xiangshui2,3   

  1. 1. Nanhu Academy of Electronics and Information Technology, Jiaxing 314002, China
    2. Hubei Yangtze Memory Laboratories, Wuhan 430205, China
    3. Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
    4. State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
  • Received:2021-10-25 Revised:2021-12-14 Published:2022-07-20 Online:2022-01-06
  • Contact: YANG Rui, professor. E-mail:
  • About author:HE Huikai (1992-), PhD. E-mail:
  • Supported by:
    National Natural Science Foundation of China(U1832116);National Natural Science Foundation of China(51772112)


Two-dimensional transition metal dichalcogenides are appealing materials for the preparation of nanoelectronic devices, and the development of memristors for information storage and neuromorphic computing using such materials is of particular interest. However, memristor arrays based on two-dimensional transition metal dichalcogenides are rarely reported due to low yield and high device-to-device variability. Herein, the 2D MoTe2 film was prepared by the chemical vapor deposition method. Then the memristive devices based on 2D MoTe2 film were fabricated through the polymethyl methacrylate transfer method and the lift-off process. The as-prepared MoTe2 devices perform stable bipolar resistive switching, including superior retention characteristics (>500 s), fast switching (~60 ns for SET and ~280 ns for RESET), and excellent endurance (>2000 cycles). More importantly, the MoTe2 devices exhibit high yield (96%), low cycle-to-cycle variability (6.6% for SET and 5.2% for RESET), and low device-to-device variability (19.9% for SET and 15.6% for RESET). In addition, a 3×3 memristor array with 1R scheme is successfully demonstrated based on 2D MoTe2 film. And, high recognition accuracy (91.3%) is realized by simulation in the artificial neural network with the MoTe2 devices working as synapses. It is found that the formation/rupture of metallic filaments is the dominating switching mechanism based on the investigations of the electron transport characteristics of high and low resistance states in the present MoTe2 devices. This work demonstrates that large-scale two-dimensional transition metal dichalcogenides film is of great potential for future applications in neuromorphic computing.

Key words: two-dimensional material, MoTe2, memristor array, neuromorphic computing

CLC Number: