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ISSN:1000-324X CN:31-1363/TQ
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Journal of Inorganic Materials
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中文
Defect-induced Analogue Resistive Switching Behavior in FeO
x
-based Memristor and Synaptic Paired-pulse Facilitation Feature
WANG Tongyu, RAN Haofeng, ZHOU Guangdong
Journal of Inorganic Materials . 2023, (
4
): 437 -444 . DOI: 10.15541/jim20220721
