Molten Salt Assisted Synthesis of Dy3Si2C2 Coated SiC Powders and Sintering Behavior of SiC Ceramics

doi:10.15541/jim20200068

Abstract

Abstract:

Silicon carbide is widely used because of its excellent physical and chemical properties. The chemical bonding characteristics of SiC make it difficult to be sintered. Therefore, preparation of high-quality SiC ceramics is one of the challenges in SiC research field. In this study, the ternary rare-earth carbide Dy₃Si₂C₂ was proposed as a new sintering additive for SiC ceramics, through the phase transition of Dy-Si-C system at high temperatures to promote the densification of SiC. The Dy₃Si₂C₂ coated SiC powders were synthesized via an in-situ reaction between metal Dy and SiC in high temperature molten salts. The Dy₃Si₂C₂ coated SiC powder was sintered by spark plasma sintering (SPS), at 1800 ℃, 45 MPa. As the result, high-purity SiC ceramic with the density of 99% and thermal conductivity of 162.8 W·m ^-1·K ^-1was obtained to form the SiC-Dy₃Si₂C₂raw material with n(Dy) : n(SiC)=1 : 4. Further study shows that Dy₃Si₂C₂ and SiC undergo a eutectic reaction at high temperatures, which generates liquid phase at the grain boundaries and promotes the densification of SiC ceramics. This study shows that the ternary rare-earth carbides Re₃Si₂C₂ (Re=La, Ce…) has great potential to be used as the sintering additive for SiC.

Key words: SiC, Dy₃Si₂C₂, spark plasma sintering, molten salt

CLC Number:

TQ174

WAN Peng, LI Mian, HUANG Qing. Molten Salt Assisted Synthesis of Dy₃Si₂C₂ Coated SiC Powders and Sintering Behavior of SiC Ceramics[J]. Journal of Inorganic Materials, 2021, 36(1): 49-54.

Figures/Tables 5

Fig. 1 (a) XRD patterns of the SiC and SiC-Dy3Si2C2 raw materials prepared with different molar ratios, SEM images of (b) SiC and (c) SiC-Dy3Si2C2

Fig. 2 (a) XRD and (b-f) SEM images of sintered pure SiC ceramics and SiC ceramics sintered from SiC-Dy3Si2C2 raw materials with different molar ratios (b) SiC; (c) n(Dy) : n(SiC) =1 : 8, 1800 ℃; (d) n(Dy) : n(SiC) =1 : 6, 1800℃; (e) n(Dy) : n(SiC)=1 : 4, 1800 ℃; (f) n(Dy) : n(SiC)=1 : 4, 1700 ℃

Fig. 3 (a) TEM image and (b) EDS analysis of SiC ceramics sintered from raw materials with ratio of n(Dy) : n(SiC)=1 : 4; (c) HR-TEM of the marked area 1 in (a); (d) HR-TEM image of the marked area 2 in (a)

Fig. 4 Displacement curves of piston on the SiC ceramic during the SPS sintering

Table 1 Parameters of density and thermal properties of sintered SiC ceramics

Specimen	Density /(g·cm^-3)	Heat capacity /(J·g^-1·K^-1)	Thermal diffusion /(mm²·s^-1)	Phonon mean free path/nm	Thermal conductivity /(W·m^-1·K^-1)
n(Dy) : n(SiC)=1 : 8(1800 ℃)	3.321	0.649	54.3	13.8	117.1
n(Dy) : n(SiC)=1 : 6(1800 ℃)	3.589	0.533	52.1	13.2	99.8
n(Dy) : n(SiC)=1 : 4(1800 ℃)	3.228	0.683	73.8	18.7	162.8
n(Dy) : n(SiC)=1 : 4(1700 ℃)	3.306	0.648	58.0	16.5	124.3

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Molten Salt Assisted Synthesis of Dy₃Si₂C₂ Coated SiC Powders and Sintering Behavior of SiC Ceramics

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