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无机材料学报

无机材料学报

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Half-Heusler热电半导体材料

黄向阳1; 徐政1; 陈立东2   

  1. 1. 同济大学材料科学与工程学院, 上海 200092; 2. 中国科学院上海硅酸盐研究所高性能陶瓷和超微结构国家重点实验室, 上海 200050
  • 收稿日期:2002-11-08 修回日期:2002-12-10 出版日期:2004-01-20 网络出版日期:2004-01-20

New Thermoelectric Materials with Half-Heusler Structure

HUANG Xiang-Yang1; XU Zheng1; CHEN Li-Dong2   

  1. 1. School of Materials Science & Engineering; Tongji University; Shanghai 200092; China; 2. State key Lab of High Performance Ceramics and Superfine Microstructure; Shanghai Institute of Ceramics; CAS; Shanghai 200050; China
  • Received:2002-11-08 Revised:2002-12-10 Published:2004-01-20 Online:2004-01-20

PDF (PC)

1471

被引次数

52

摘要： 介绍了最近几年在热电半导体材料领域里新出现的half-Heusler化合物的结构和研 究现状,比较了各化合物掺杂及等电子合金化前后的电与热传输参数的变化,并指出了该材料 的进一步研究方向.

关键词: 热电材料, half-Heusler, 性能指数, 掺杂

Abstract: This paper presented the introduction of new thermoelectric materials with half-Heusler structure. The crystal structure and recent progress were demonstrated. The effects of doping and isoelectronic alloying on thermoelectric properties were discussed. Some problems that should be paid great attentions to were given.

Key words: thermoelectric materials, half-Heusler, dimensionless figure of merit, doping

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