无机材料学报

• 研究论文 • 上一篇    

铌表面固体粉末包埋渗硅研究

李明1; 宋力昕1; 乐军1; 宋学平2; 郭占成2   

  1. 1. 中国科学院上海硅酸盐研究所特种无机材料研究发展中心, 上海市200050; 2. 中国科学院过程工程研究所, 北京 100080
  • 收稿日期:2004-04-29 修回日期:2004-06-10 出版日期:2005-05-20 网络出版日期:2005-05-20

Microstructure and Mechanism of Pack Siliconizing on Niobium

LI Ming1; SONG Li-Xin1; LE Jun1; SONG Xue-Ping2; GUO Zhan-Cheng2   

  1. 1. Research & Development Center for Special Inorganic Materials; Shanghai Institute of Ceramics; Chinese Academy of Sciences; Shanghai 200050; China; 2.Institute of Process Engineering; Beijing 100080; China
  • Received:2004-04-29 Revised:2004-06-10 Published:2005-05-20 Online:2005-05-20

摘要: 采用固体粉末包埋渗硅工艺在铌表面制备了二硅化铌涂层,研究了渗硅过程中Si沉积的反应机理和二硅化铌涂层的结构.结果表明:涂层由单相的二硅化铌组成;Si的输运和沉积主要依靠硅的低氟化物SiF2完成.

关键词: 渗硅, 涂层, 铌, 二硅化铌

Abstract: NbSi2 coating was formed on niobium by halide-activated pack cementation process. The microstructure of the as-formed coating and the possible reactions of Si deposition were investigated. The results indicate that the as-formed coating consists of single phase of NbSi2- SiF2 is responsible for the transportation and deposition of Si in the pack.

Key words: siliconizing, coating, niobium, niobium disilicide

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