GaSe晶体的掺S生长及性能研究

doi:10.15541/jim20150032

无机材料学报 ›› 2015, Vol. 30 ›› Issue (8): 887-890.DOI: 10.15541/jim20150032 CSTR: 32189.14.10.15541/jim20150032

GaSe晶体的掺S生长及性能研究

黄昌保, 倪友保, 吴海信, 王振友, 肖瑞春, 戚鸣

(中国科学院安徽光学精密机械研究所, 安徽光电子材料和设备重点实验室, 合肥230031)

收稿日期:2015-01-12 出版日期:2015-03-30 网络出版日期:2015-07-21
作者简介:黄昌保. E-mail: tantalus6036@gmail.com

Growth and Characterization of Sulfur-doped GaSe Single Crystals

HUANG Chang-Bao, NI You-Bao, WU Hai-Xin, WANG Zhen-You, XIAO Rui-Chun, QI Ming

(Anhui Provincial Key Laboratory of Photonic Devices and Materials, Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China)

Received:2015-01-12 Published:2015-03-30 Online:2015-07-21
About author:HUANG Chang-Bao (1985-), candidate of PhD. E-mail: tantalus6036@gmail.com
Supported by:
Foundation item: National Natural Science Foundation of China (51202250);Knowledge Innovation Program of the Chinese Academy of Sciences (13J131211)

摘要/Abstract

摘要：

当生长掺S的GaSe单晶时, 熔体的强烈对流和溶质扩散使得生长出大尺寸的晶体较为困难。本实验采用改进的Bridgman炉, 并结合坩埚旋转技术, 成功生长出了较大尺寸的GaSe_0.89S_0.11单晶体(ϕ20×60 mm³)。采用X射线粉末衍射仪、能谱仪、纳米压痕仪和傅里叶红外光谱仪测量其结构、成分、机械和光学性质。测试结果表明, 质量分数为2.38%的 S掺杂的GaSe晶体(GaSe_0.89S_0.11)没有发生结构相变; 它的机械性能得到了明显的改善, 同时光学性能也得到了一定的提高。

关键词: GaSe0.89S0.11, 掺杂, 改进的Bridgman炉, 坩埚旋转

Abstract:

It is difficult to obtain high quality sulfur-doped GaSe single crystal due to the intensive convection and solution diffusion in the melt. High quality GaSe_0.89S_0.11 single crystal with dimensions of ϕ20 mm×60 mm was successfully grown by Bridgman method using modified furnace with crucible rotation technique. The crystal was characterized by using energy dispersive spectrometer, X-ray diffractometer, nanoindentation, and Fourier infrared spectrometer. The measured results indicate that the sulfur-doped GaSe crystal with sulfur level of 2.38wt% shows significantly improved mechanical properties. The infrared transmission tests indicate that it has slightly higher transmittance in the range of 0.62-12.5 µm than the pure GaSe crystal. The results demonstrate that the modified Bridgman method could be used to produce high quality sulfur-doped GaSe crystals.

Key words: GaSe0.89S0.11, doped, modified Bridgman furnace, crucible rotation

中图分类号:

TQ174

黄昌保, 倪友保, 吴海信, 王振友, 肖瑞春, 戚鸣. GaSe晶体的掺S生长及性能研究[J]. 无机材料学报, 2015, 30(8): 887-890.

HUANG Chang-Bao, NI You-Bao, WU Hai-Xin, WANG Zhen-You, XIAO Rui-Chun, QI Ming. Growth and Characterization of Sulfur-doped GaSe Single Crystals[J]. Journal of Inorganic Materials, 2015, 30(8): 887-890.

图/表 5

Fig. 1 The schematic of modified Bridgman furnace device

Fig. 2 The photograph of as-grown sulfur-doped GaSe and pure GaSe boule The longer one is sulfur doped GaSe and the shorter one is pure GaSe

Fig. 3 EDS spectrum of the GaSexS1-x sample

Fig. 4 XRD patterns of pure GaSe and GaSe0.89S0.11

Fig. 5 Transmission spectra of pure GaSe and GaSe0.89S0.11 with about 3.5 mm thickness

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GaSe晶体的掺S生长及性能研究

Growth and Characterization of Sulfur-doped GaSe Single Crystals

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