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无机材料学报

无机材料学报

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TiO2/SiO2薄膜中的相界扩散及晶化行为研究

翟继卫; 张良莹; 姚熹   

  1. 西安交通大学材料研究所 西安710049
  • 收稿日期:1997-01-07 修回日期:1997-03-10 出版日期:1998-02-20 网络出版日期:1998-02-20

Diffusion of Phase Boundary and Crystallization Behaviors for Tio2/SiO2 Composite Films

ZHAI Ji-Wei; ZHANG Liang-Ying; LAO Xi   

  1. Electronic Materics Research Laboratory; Xi an Jiaotong University Xi an 710049 China
  • Received:1997-01-07 Revised:1997-03-10 Published:1998-02-20 Online:1998-02-20

PDF (PC)

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摘要： 本文研究了溶胶一凝胶法制备TiO2／SiO2复合薄膜的晶化行为以及复合薄膜与过渡层的相界扩散采用X-ray衍射分析了50TiO2／50SiO2薄膜中TiO2的析晶特征，研究表明，随热处理温度的升高，薄膜的结构由非晶转变为在SiO2玻璃网络中析出的锐钛矿相，再到锐钛矿和金红石二相共存，最后转变为金红石相，并伴随有磷石英和方石英的析出，且其晶粒尺寸也在逐渐增大．AES分析给出了过渡层的气孔率对复合膜中Ti的扩散能力的影响以及复合膜与过渡层之间碳的分布．SEM及EDS进一步揭示了薄膜表面存在亚微米不均匀区域，在此区域中碳的含量较高．在氧气中，提高热处理温度，可以降低碳的含量.

关键词: 溶胶-凝胶, 薄膜, AES, 扩散, 晶化

Abstract: The crystallization behaviors of sol-gel TiO2/SiO2 composite films and the phase boundary diffusion of the film and the buffer layer were studied. 50TiO2/50SiO2
films annealed between 500℃ and 950℃ exhibited crytsallization in the anatase ad rutile phases. The structure of the thin film transformed from
amorphous state into anatase, and from anatase into rutile and induced the crystallization of SiO2. For TiO2/SiO2 film deposited on a dense silica
and nano-porous SiO2 surface, the diffusion of Ti can be observed in the nano-porous layer by AES. Between the film and the buffer layer carbon was also
observed by AES. SEM and EDS revealed the distribution of carbon in the thin film surface. With the increasing heat-treatment temperature in O2 the conent of carbon decreased.

Key words: sol-gel, thin film, AES, diffusion, crystallization

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